ON Semiconductor 4MN10CH-TL-E

Brief Description: The 4MN10CH-TL-E is a surface-mount NPN bipolar junction transistor (BJT) designed for RF applications. It has a maximum current collector rating of 100mA and a minimum DC current gain of 60 at 10mA and 10V.

Features:

• Maximum current collector rating: 100mA
• Minimum DC current gain (hFE): 60 at 10mA and 10V
• Frequency transition: 400MHz
• Maximum power dissipation: 600mW
• Voltage collector-emitter breakdown: 200V
• Moisture sensitivity level: 3 (168 hours)
• Mounting type: Surface mount
• Package/case: SC-96
• Packaging: Tape & Reel (TR)

Application Grade: The 4MN10CH-TL-E is designed for high-frequency RF applications, making it suitable for use in wireless communication systems, radar systems, and other applications requiring high-speed switching and amplification.

Applications:

• Wireless communication systems (e.g., cellular phones, Wi-Fi routers)
• Radar systems
• High-speed data transmission systems
• Amplifiers and switches in RF and microwave applications
• Other high-frequency applications requiring high-speed switching and amplification

Note: As the part is obsolete, it may not be available for new designs or purchases. However, it may still be used in existing applications or for repair purposes.