ROHM Semiconductor RT1A050ZPTR

Brief Description: The RT1A050ZPTR is a P-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from ROHM Semiconductor, designed for switching applications. It is a single-element device with a built-in diode, packaged in an 8-SMD, flat lead package.

Features:

• Enhancement mode operation
• Operating temperature range: -40°C to 150°C (TJ)
• Power dissipation: 1.25W (continuous), 600mW (max)
• Pulsed drain current: 20A (max)
• Continuous drain current: 5A (max)
• Drain to source breakdown voltage: -12V
• Drain to source voltage: 12V
• Drive voltage: 1.5V to 4.5V (max Rds on, min Rds on)
• Gate to source voltage: 10V
• Input capacitance: 2800pF (max) @ Vds = 6V
• Rds on (max): 26mΩ @ Id = 5A, Vgs = 4.5V
• Resistance: 96MOhm
• Rise time: 95ns
• Fall time: 220ns
• Turn on delay time: 12ns
• Turn off delay time: 410ns
• Vgs (max): ±10V
• Vgs(th) (max): 1V @ Id = 1mA

Application Grade: The RT1A050ZPTR is designed for general-purpose switching applications, including power switching, motor control, and LED driving.

Applications:

• Power switching
• Motor control
• LED driving
• General-purpose switching applications

Key Information:

• Package: 8-SMD, flat lead
• Packaging: Tape & Reel (TR)
• Lead Free: Yes
• RoHS Status: ROHS3 compliant
• Radiation Hardening: No
• Mounting Type: Surface Mount
• Number of Pins: 8
• Number of Elements: 1
• Transistor Application: Switching
• Transistor Element Material: Silicon