ON Semiconductor FQA6N90C-F109

Brief Description: The FQA6N90C-F109 is a single N-Channel MOSFET from ON Semiconductor, designed for switching applications. It features a high drain-to-source breakdown voltage of 900V and a continuous drain current of 6A.

Features:

• High drain-to-source breakdown voltage: 900V
• Continuous drain current: 6A
• Peak pulsed drain current: 24A
• Power dissipation: 198W
• Operating temperature: -55°C to 150°C
• Gate-to-source voltage: ±30V
• Threshold voltage: 5V
• Rise time: 90ns
• Fall time: 60ns
• Turn-on delay time: 35ns
• Turn-off delay time: 55ns
• Gate charge: 40nC
• Input capacitance: 1770pF
• Package: TO-3P-3, SC-65-3
• Mounting type: Through-hole
• Moisture sensitivity level: MSL 1 (unlimited)

Application Grade: The FQA6N90C-F109 is designed for high-power switching applications, such as power supplies, motor controls, and power conversion systems.

Applications:

• Power supplies
• Motor controls
• Power conversion systems
• High-power switching applications
• Industrial control systems
• Automotive applications

This MOSFET is suitable for applications that require high power handling, high voltage, and high current. Its high breakdown voltage and continuous drain current make it an ideal choice for power switching applications.