The Kynix Components

CatalogDescriptionApplicationsFeaturesOrdering Information Absolute Maximum RatingsThermal DataElectrical CharacteristicsTypical Electrical CharacteristicsPackage DimensionsIRF540 DatasheetIRF540 FAQ DescriptionIRF540 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. Applications■ High-efficiency dc-dc converters■ Ups and motor control FeaturesTYPEVDSSRDS(on)IDIRF540100 V<0.077 Ω22 A■ Typical RDS(on) = 0.055Ω■ Exceptional dv/dt capability■ 100% avalanche tested■ Low gate charge■ Application oriented characterization Ordering InformationSALES TYPEMARKINGPACKAGEPACKAGINGIRF540IRF540&TO-220TUBEAbsolute Maximum RatingsSymbolParameterValueUnitVDSDrain-source Voltage (VGS = 0)100VVDGRDrain-gate Voltage (RGS = 20 kΩ)100VVGSGate- source Voltage± 20VIDDrain Current (continuous) at TC = 25°C22AIDDrain Current (continuous) at TC = 100°C15AIDM(1)Drain Current (pulsed)88APtot Total Dissipation at TC = 25°C85WDerating Factor0.57W/°Cdv/dt (2)Peak Diode Recovery voltage slope9V/nsEAS (3)Single Pulse Avalanche Energy220mJTstgStorage Temperature-55 to 175°CTjMax. Operating Junction Temperature(1) Pulse width limited by safe operating area. (2) ISD ≤ 22A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX(3) Starting Tj = 25℃, ID = 12A, VDD = 30V Thermal DataRthj-caseThermal Resistance Junction-caseMax1.76°C/WRthj-ambThermal Resistance Junction-ambientMax62.5°C/WTlMaximum Lead Temperature For Soldering PurposeTyp300°C Electrical Characteristics Tcase = 25 °C unless otherwise specifiedOFFSymbolParameterTest ConditionsMin.Typ.Max.UnitV(BR)DSSDrain-source Breakdown VoltageID = 250 µA, VGS = 0100  VIDSSZero Gate Voltage Drain Current (VGS = 0)VDS = Max RatingVDS = Max Rating TC = 125°C  110µA µAIGSSGate-body Leakage Current (VDS = 0)VGS = ± 20V  ±100nA ONSymbolParameterTest ConditionsMin.Typ.Max.UnitVGS(th)Gate Threshold VoltageVDS = VGS ID = 250 µA234VRDS(on)Static Drain-source On ResistanceVGS = 10 V ID = 11 A 0.0550.077W DYNAMICSymbolParameterTest ConditionsMin.Typ.Max.Unitgfs (*)Forward TransconductanceVDS =25 VID = 11 A 20 SCissInput CapacitanceVDS = 25V, f = 1 MHz, VGS = 0 870 pFCossOutput Capacitance 125pFCrssReverse TransferCapacitance 52pF SWITCHING ONSymbolParameterTest ConditionsMin.Typ.Max.Unittd(on)Turn-on Delay TimeVDD = 50 V ID = 12 A 60 nstrRise TimeRG = 4.7 W VGS = 10 V(Resistive Load) 45 nsQgTotal Gate ChargeVDD= 80 V ID= 22 A VGS= 10V 3041nCQgsGate-Source Charge  6 nCQgdGate-Drain Charge  10 nC SWITCHING OFFSymbolParameterTest ConditionsMin.Typ.Max.Unittd(off)Turn-off Delay TimeVDD = 50 V ID = 12 A 50 nstfRG = 4.7W, VGS = 10 V(Resistive Load)20nsFall Time SOURCE DRAIN DIODESymbolParameterTest ConditionsMin.Typ.Max.UnitISD ISDM (·)Source-drain CurrentSource-drain Current (pulsed)   2288A AVSD (*)Forward On VoltageISD = 22 A VGS = 0  1.3VtrrReverse Recovery TimeISD = 22 A di/dt = 100A/µs 100 nsQrrReverse Recovery ChargeVDD = 30 V Tj = 150°C375nCIRRMReverse Recovery Current 7.5A(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.(·)Pulse width limited by safe operating area. Typical Electrical Characteristics             Package DimensionsNOTES:1.Dimensioning and tolerancing per ANSIY14.5M, 1982.2.Controlling dimension: inch.3.Dimension z defines a zone where all body and lead irregularities are allowed. DIM INCHESMILLIMETERSMINMAXMINMAXA0.5700.62014.4815.75B0.3800.4059.6610.28C0.1600.1904.074.82D0.0250.0350.640.88F0.1420.1473.613.73G0.0950.1052.422.66H0.1100.1552.803.93J0.0180.0250.460.64K0.5000.56212.7014.27L0.0450.0601.151.52N0.1900.2104.835.33Q0.1000.1202.543.04R0.0800.1102.042.79S0.0450.0551.151.39T0.2350.2555.976.47U0.0000.0500.001.27V0.045–––1.15–––Z–––0.080–––2.04 IRF540 DatasheetYou can download the datasheet of IRF540 from the link given below:IRF540 Datasheet IRF540 FAQWhat is IRF540 MOSFET?IRF540 is an N-Channel powered MOSFET used for very fast switching operations as well as for amplification processes. It operates in enhancement mode. It has a lot of applications in daily life for example, switching regulators, relay drivers, switching converters, motor drivers, high speed power switching drivers etc. What is gate source voltage in MOSFET?The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor, as shown above. The gate-source voltage, VGS, is a very important voltage because it is the voltage which is responsible for turning off a JFET or a depletion MOSFET transistor. What are power MOSFETs used for?Power MOSFETs are widely used in transportation technology, which include a wide range of vehicles. In the automotive industry, power MOSFETs are widely used in automotive electronics. Power MOSFETs (including DMOS, LDMOS and VMOS) are commonly used for a wide range of other applications. How is gate charge determined in MOSFET?One method of measuring the gate charge of a MOSFET is described in the JEDEC JESD24-2 standard, “Gate Charge Test Method”. In this method, a gate current is forced while the gate to source voltage is measured as a function of time. What is the difference between MOSFET and power mosfet?Power MOSFET is a type of MOSFET which is specially meant to handle high levels of power. These exhibit high switching speed and can work much better in comparison with other normal MOSFETs in the case of low voltage levels. However its operating principle is similar to that of any other general MOSFET. 

Product OverviewThe ULN2003APG/AFWG Series are high−voltage, high−current darlington drivers comprised of seven NPN darlington pairs. All units feature integral clamp diodes for switching inductive loads.   This blog will introduce ULN2003APG systematically from its features, pinout to its specifications, applications, also including ULN2003APG datasheet and so much more. CatalogProduct OverviewRelated Video IntroductionULN2003APG FeaturesULN2003APG PinoutULN2003APG ApplicationsULN2003APG CAD ModelsULN2003APG Circuit DiagramULN2003APG SchematicULN2003APG PackageULN2003APG SpecificationULN2003APG ManufacturerULN2003APG DatasheetUsing WarningsULN2003APG FAQ Related Video Introduction Video: 28BYJ-48 stepper motor and ULN2003 Arduino (Quick tutorial for beginners) ULN2003APG Video Description: In this quick Arduino tutorial, I will show you how to use 28BYJ-48 stepper motor with ULN2003 driver. Because this is a quick Arduino tutorial we will focus on the most important things you need to know to get it working in 5 minutes. ULN2003APG FeaturesOutput current (single output): 500 mA maxHigh sustaining voltage output: 50 V minOutput clamp diodesInputs compatible with various types of logicPackage Type-APG: DIP-16pinPackage Type-AFWG: SOL-16pin ULN2003APG PinoutThe following figure is the diagram of ULN2003APG pinout. ULN2003APG Pinout ULN2003APG ApplicationsApplications include relay, hammer, lamp and display (LED) drivers. ULN2003APG CAD Models  The following are ULN2003APG Symbol, Footprint, and 3D Model. ULN2003APG Symbol ULN2003APG Footprint ULN2003APG 3D Model ULN2003APG Circuit DiagramThe following are the circuit diagrams of ULN2003APG. ICEX VCE (sat), hFE IN (ON) IIN (OFF) VIN (ON) IR VF ULN2003APG SchematicThe architecture of ULN2003APG is shown in the picture below. ULN2003APG Schematic Note: The input and output parasitic diodes cannot be used as clamp diodes. ULN2003APG PackageThe following diagram shows the ULN2003APG package. ULN2003APG Package ULN2003APG SpecificationManufacturerTOSHIBAType of integrated circuitdriverKind of integrated circuitdarlington,transistor arrayCaseDIP16Output current0.5AOutput voltage2-50VNumber of channels7MountingTHTOperating temperature -40-85°CApplicationfor inductive loadInput voltage30V ULN2003APG ManufacturerToshiba America Electronic Components, Inc. (TAEC) is the North America electronic components business of Toshiba. TAEC offers a broad IC and discrete product line including high-end microcontrollers, ASICs and ASSPs for automotive, multimedia, industrial, telecoms and networking applications. The company also has a wide range of power semiconductor solutions as well as storage products including Enterprise and Consumer HDDs. ULN2003APG DatasheetYou can download ULN2003APG datasheet from the link given below:ULN2003APG Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. ULN2003APG FAQHow many NPN darlington pairs are in the ULN2003APG/AFWG Series? Seven. What do the ULN2003APG/AFWG Series feature for switching inductive loads? Integral clamp diodes. What is Darlington sink driver?Darlington transistor power drivers are high-voltage, high-current switch arrays containing multiple open-collector Darlington pairs and integral suppression diodes for inductive loads. The high current rating of each output is 500 mA or higher. What is the main function of Darlington transistor?Working of a Darlington Transistor. A Darlington transistor acts as a single transistor with high current gain, it means that a small amount of current is used from a microcontroller or a sensor to run a larger load. What is the difference between sinking and sourcing?Sink and Source are terms used to define the flow of direct current in an electric circuit. A sinking input or output circuit provides a path to ground for the electric load. A sourcing input or output provides the voltage source for the electric load.

CatalogORDERING INFORMATIONABSOLUTE MAXIMUM RATINGSTHERMAL CHARACTERISTICSELECTRICAL CHARACTERISTICSTYPICAL PERFORMANCE CHARACTERISTICSPACKAGE DIMENSIONS1N4148 Datasheet1N4148 FAQ ORDERING INFORMATIONPart NumberMarkingPackagePacking Method1N914914DO−204AH (DO−35)Bulk1N914−T50A914DO−204AH (DO−35)Ammo1N914TR914DO−204AH (DO−35)Tape and Reel1N914ATR914ADO−204AH (DO−35)Tape and Reel1N914B914BDO−204AH (DO−35)Bulk1N914BTR914BDO−204AH (DO−35)Tape and Reel1N916916DO−204AH (DO−35)Bulk1N916A916ADO−204AH (DO−35)Bulk1N916B916BDO−204AH (DO−35)Bulk1N41484148DO−204AH (DO−35)Bulk1N4148TA4148DO−204AH (DO−35)Ammo1N4148−T26A4148DO−204AH (DO−35)Ammo1N4148−T50A4148DO−204AH (DO−35)Ammo1N4148TR4148DO−204AH (DO−35)Tape and Reel1N4148−T50R4148DO−204AH (DO−35)Tape and Reel1N44484448DO−204AH (DO−35)Bulk1N4448TR4448DO−204AH (DO−35)Tape and ReelFDLL914BlackSOD−80Tape and ReelFDLL914ABlackSOD−80Tape and ReelFDLL914BBlackSOD−80Tape and ReelFDLL4148BlackSOD−80Tape and ReelFDLL4148−D87ZBlackSOD−80Tape and ReelFDLL4448BlackSOD−80Tape and ReelFDLL4448−D87ZBlackSOD−80Tape and Reel ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted) (Note 1)RatingSymbolValueUnitMaximum Repetitive Reverse VoltageVRRM100VAverage Rectified Forward CurrentIO200mADC Forward CurrentIF300mARecurrent Peak Forward CurrentIf400mANon−repetitive Peak Forward Surge Current Pulse Width = 1.0 sPulse Width = 1.0 µsIFSM1.0A4.0AStorage Temperature RangeTSTG−65 to +200°COperating Junction Temperature RangeTJ−55 to +175°CStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.1.These ratings are limiting values above which the serviceability of the diode may be THERMAL CHARACTERISTICSParameterSymbolMaxUnitPower DissipationPD500mWThermal Resistance, Junction−to−AmbientRθJA300°C ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted) (Note 2)SymbolParameterConditionsMinMaxUnitVRBreakdown VoltageIR = 100 µA100 VIR = 5.0 µA75 VVFForward Voltage914B / 4448IF = 5.0 mA0.620.72V916BIF = 5.0 mA0.630.73V914 / 916 / 4148IF = 10 mA 1.0V914A / 916AIF = 20 mA 1.0V916BIF = 20 mA 1.0V914B / 4448IF = 100 mA 1.0VIRReverse LeakageVR = 20 V 0.025µAVR = 20 V, TA = 150°C 50µAVR = 75 V 5.0µACTTotal Capacitance916/916A/916B/4448VR = 0, f = 1.0 MHz 2.0pF914/914A/914B/4148VR = 0, f = 1.0 MHz 4.0pFtrrReverse Recovery TimeIF = 10 mA, VR = 6.0 V (600 mA) Irr = 1.0 mA, RL = 100 Ω 4.0ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.2.Non−recurrent square wave PW = 8.3 TYPICAL PERFORMANCE CHARACTERISTICS PACKAGE DIMENSIONS  1N4148 DatasheetYou can download the datasheet given the link below.1N4148-Datasheet 1N4148 FAQWhat is 1N4148 used for? What is a 1N4148 Transistor? 1N4148 diode is mainly used for quick switching purposes, so these are known as switching diodes. The main functionality of these diodes is the same as a normal switch. These diodes have high resistance under a fixed voltage whereas they have low resistance above the fixed voltage.  What is the voltage of 1N4148? This is a very common signal diode - 1N4148. Use this for signals up to 200mA of current. Very general purpose, it's got a typical forward voltage drop of 0.72V and a 300mA maximum forward current rating. What type of diode is 1N4148? The 1N4148 is a standard silicon switching signal diode. It is one of the most popular and long-lived switching diodes because of its dependable specifications and low cost. Its name follows the JEDEC nomenclature. What does a 1N914 diode do? The 1N914 is a small signal diode which can handle low voltage and low current. The diode can switch at high speed and hence normal used in switching applications and not in rectifier applications. What is a small signal fast switching diode? Small signal and switching diodes have much lower power and current ratings, around 150mA, 500mW maximum compared to rectifier diodes, but they can function better in high frequency applications or in clipping and switching applications that deal with short-duration pulse waveforms. 

CatalogMainGeneralPhysicalInputOutputConformanceEnvironmentalBatteries & RuntimeCommunications & ManagementSurge Protection and FilteringOrdering and shipping detailsSRT5KXLT DatasheetSRT5KXLT FAQMainKw Rating4800 WRated power in VA5400 VANb of power socket outlets2 NEMA L6-20R2 NEMA L6-30RMain Output Voltage208 VOther Output Voltage240 VOther Input Voltage240 VMain Input Voltage208 VPlug standardNEMA L 6-30PCable length10 ft (3.05 m)Number of cables1 GeneralProvided equipmentCD with softwareDocumentation CDInstallation guideRemovable support feetTemperature ProbeUSB cableWarranty cardWeb/SNMP Management CardProduct web sub-familyHigh densityNumber of power module free slots0Number of power module flled slots0RedundantNo PhysicalColorBlackDepth28.31 in (71.9 cm)Height17.01 in (43.2 cm)Mounting LocationFrontMounting preferenceNo preferenceNet Weight123.00 Ib(US) (55.79 kg)Mounting ModeRack-mounted with kitTwo post mountable0USB compatibleYesWidth5.12 in (13 cm) InputInput Frequency40- 70 Hz auto-sensingEfficiency at full load10...275 V adjustable (half load) OutputMax Configurable Power (Watts)4800 WHarmonic distortionLess than 2%Output Frequency (sync to mains)50/60 Hz +/- 3 Hz sync to mainsCrest factor3:01TopologyDouble Conversion OnlineWaveform TypeSine waveBypass typeInternal Bypass (Automatic and Manual)Maximum configurable power in VA5400 VA ConformanceProduct CertificationsENERGY STAR V2.0 (USA)NOMStandardsCSA C22.2 No.107.3-05FCC Part 15 class AUL 1778 EnvironmentalAmbient air temperature for operation32...104 °F 0...40 °C)Relative Humidity0...95 % non-condensingOperating altitude0...10000 ft，Ambient Air Temperature for Storage5...113 °F (-15...45 °C)Storage Relative Humidity0...95 % Non-condensingStorage altitude0... 50000 ft (0.00... 15240.00 m)Acoustic level55 dBAHeat dissipation1047 Btu/hIP degree of protectionIP20 Batteries & RuntimeBattery TypeLead-Acid batteryIncluded Battery Modules0Battery Slots Empty0Typical recharge time1.5hRBC Quantity1Battery Voltage192VBattery Charge Power (Watts)556 W ratedBattery power in VAH840 VAh runtimeBattery life3...5 year(s)Battery optionSRT192BP 1 2520 VAhSRT192BP 2 4200 VAhSRT192BP 3 5880 VAhSRT192BP 4 7560 VAhSRT192BP 5 9240 VAhSRT192BP 6 10920 VAhSRT192BP 8 14600 VAhSRT192BP 10 17640 VAhExtendable Run Time1 Communications & ManagementFree slots1Control panelMulti-function LCD status and control consoleAudible AlarmAudible and visible alarms prioritized by severityEmergency Power Off (EPO)Yes Surge Protection and FilteringSurge energy rating480 J Ordering and shipping detailsCategory11309- APC RESAL .E PRODUCTSGTIN I7.31304E+11Nbr. of units in pkg.1Package weight(L bs)1 Ib(US) (0.45 kg)ReturmnabilityNo SRT5KXLT DatasheetYou can download the datasheet given the link below.SRT5KXLT-Datasheet SRT5KXLT FAQWhat is uninterruptible power supply?An uninterruptible power supply (UPS), also known as a battery backup, provides backup power when your regular power source fails or voltage drops to an unacceptable level. A UPS allows for the safe, orderly shutdown of a computer and connected equipment. How long do uninterruptible power supplies last?While some UPS systems can last 15 or more years before needing to be replaced, these primary components are subject to failure far earlier. To avoid downtime or damage to critical equipment, make sure you understand the lifecycle and maintenance requirements of a UPS's key components. What size of UPS do I need?Simply tally up the wattage of every device you plan to connect your UPS to (this is your load) and multiply that number by 1.25 to determine the UPS capacity you need. Your load should not exceed 75%-80% of your UPS system's capacity. Can UPS work without battery?Yes. The outlets will operate without any battery backup protection. Surge protection will continue to function normally. If your model has a display screen, there is a button on the front panel that can be used to mute the alarm. How long will a UPS run a TV?While a UPS has the ability power a TV for up to a max of 2-3 hours, you will need to check the product specifications of your device to get an exact answer. 

CatalogGeneral DescriptionFeaturesMarking DiagramOrdering Information Absolute Maximum RatingsThermal CharacteristicsElectrical CharacteristicsTypical CharacteristicsMechanical Case OutlineBSS138 DatasheetBSS138 FAQ General DescriptionThese N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. BSS138 products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. BSS138 products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features0.22 A, 50 V♦ RDS(on) = 3.5  @ VGS = 10 V♦ RDS(on) = 6.0  @ VGS = 4.5 VHigh Density Cell Design for Extremely Low RDS(on)Rugged and ReliableCompact Industry Standard SOT−23 Surface Mount PackageThis Device is Pb−Free and Halogen Free Marking DiagramSS = Specific Device CodeM = Date Code*▪ = Pb−Free Package(Note: Microdot may be in either location)*Date Code orientation and/or position may vary depending upon manufacturing location. Ordering InformationDevicePackageShipping†BSS138,BSS138−GSOT−23−3(Pb−Free)3000 /Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Absolute Maximum Ratings TA = 25°C unless otherwise noted.SymbolParameterRatingsUnitVDSSDrain−Source Voltage50VVGSSGate−Source Voltage±20IDDrain Current – Continuous (Note 1)0.22ADrain Current – Pulsed (Note 1)0.88PDMaximum Power Dissipation (Note 1)0.36WDerate Above 25°C2.8mW/°CTJ, TSTGOperating and Storage Junction Temperature Range-55 to +150°CTLMaximum Lead Temperature for Soldering Purposes, 1/16” from Case for 10 s300 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Characteristics TA = 25°C unless otherwise noted.SymbolParameterRatingsUnitRθJAThermal Resistance, Junction−to−Ambient (Note 1)350° C/W Electrical Characteristics TA = 25°C unless otherwise noted.SymbolParameterTest ConditionsMinTypMaxUnitOFF CHARACTERISTICSBVDSSDrain–Source Breakdown VoltageVGS = 0 V, ID = 250 µA50−−VΔVGS(th)/ΔTJBreakdown Voltage Temperature CoefficientID = 250μA, Referenced to 25℃−72−mV/℃IDSSZero Gate Voltage Drain CurrentVDS = 50 V, VGS = 0 V−−0.5µAVDS = 50 V, VGS = 0 V, TJ = 125℃−−5VDS = 30 V, VGS = 0 V−−100nAIGSSGate–Body LeakageVGS = ±20 V, VDS = 0 V−−±100ON CHARACTERISTICSVGS(th)Gate Threshold VoltageVDS = VGS, ID = 1 mA0.81.31.5VΔVGS(th)/ΔTJGate Threshold Voltage Temperature CoefficientID = 1 mA, Referenced to 25℃−–2−mV/℃RDS(on)Static Drain–Source On–ResistanceVGS = 10 V, ID = 0.22 A−0.73.5ΩVGS = 4.5 V, ID = 0.22 A−16ΩVGS = 10 V, ID = 0.22 A, TJ = 125℃−1.15.8 ID(on)On–State Drain CurrentVGS = 10 V, VDS = 5 V0.2−−AgFSForward TransconductanceVDS = 10 V, ID = 0.22 A0.120.5−SDYNAMIC CHARACTERISTICSCissInput CapacitanceVDS = 25 V, VGS = 0 V, f = 1.0 MHz−27−pFCossOutput Capacitance−13−pFCrssReverse Transfer Capacitance−6−pFRGGate ResistanceVGS = 15 mV, f = 1.0 MHz−9−ΩSWITCHING CHARACTERISTICStd(on)Turn–On Delay TimeVDD = 30 V, ID = 0.29 A, VGS = 10 V, RGEN = 6 Ω−2.55nstrTurn–On Rise Time−918nstd(off)Turn–Off Delay Time−2036nstfTurn–Off Fall Time−714nsQgTotal Gate ChargeVDS = 25 V, ID = 0.22 A, VGS = 10 V−1.72.4nCQgsGate–Source Charge−0.1−nCQgdGate–Drain Charge−0.4−nCDRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGSISMaximum Continuous Drain–Source Diode Forward Current−−0.22AVSDDrain–Source Diode Forward VoltageVGS = 0 V, IS = 0.44 A (Note 2)−0.81.4V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.1.RΘJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermalreference is defined as the solder mounting surface of the drain pins. RΘJA is guaranteed by design while RΘJA is determined by the user’s board design. a) 350°C/W when mounted on a minimum pad.2.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% Typical Characteristics           Mechanical Case Outline NOTES:1.Dimensioning and tolerancing per ASME Y14.5M, 1994.2.Controlling dimension: millimeters.3.Maximum lead thickness includes lead finish.Minimum lead thickness is the minimum thickness of the base material.4.Dimensions d and e do not include mold flash,protrusions, or gate burrs.DIM MILLIMETERSINCHESMINNOMMAXMINNOMMAXA0.891.001.110.0350.0390.044A10.010.060.100.0000.0020.004b0.370.440.500.0150.0170.020c0.080.140.200.0030.0060.008D2.802.903.040.1100.1140.120E1.201.301.400.0470.0510.055e1.781.902.040.0700.0750.080L0.300.430.550.0120.0170.022L10.350.540.690.0140.0210.027HE2.102.402.640.0830.0940.104T0°−−−10°0°−−−10° BSS138 DatasheetYou can download the datasheet of BSS138 from the link given below:BSS138 Datasheet BSS138 FAQWhat is BSS138?The BSS138 is an SMD Package Logic Level N-Channel MOSFET with low on-state resistance (3.5Ω) and low input capacitance (40 pF). Adding to this the Mosfet can also switching at high speed of 20ns. Due to the low threshold voltage and high switching speed this Mosfet is commonly used in level shifter circuits. What is N-channel transistor?Channel MOSFET is a type of metal oxide semiconductor field-effect transistorthat is categorized under the field-effect transistors (FET). This type of transistor is also known as an insulated-gate field-effect transistor (IGFET). Sometimes it is also known as a metal-insulator field-effect transistor (MIFET). What is a logic level MOSFET?A logic level mosfet means that it is designed to turn on fully from the logic level of a microprocessor. The standard mosfet (IRF series etc) is designed to run from 10V. What is N-channel enhancement MOSFET?A N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. An enhancement-type MOSFET is the opposite. It is normally off when the gate-source voltage is 0 (VGS=0). What is enhancement mode transistor?Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits. These devices are off at zero gate–source voltage. In a depletion-mode MOSFET, the device is normally on at zero gate–source voltage. 

CatalogDescriptionInternal Schematic DiagramAbsolute Maximum RatingsThermal DataElectrical CharacteristicsMechanical Data2N2222 Datasheet2N2222 FAQ DescriptionThe 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. 2N2218/2N2219 approved to CECC 50002-100, 2N2221/2N2222 approved to CECC 50002-101 available on request. Internal Schematic Diagram Absolute Maximum RatingsSymbolParameterValueUnitVCBOCollector-base Voltage (IE = 0)60VVCEOCollector-emitter Voltage (IB = 0)30VVEBO Emitter-base Voltage (IC = 0)5VICCollector Current0.8APto t  Total Power Dissipation at T amb ≤ 25 °Cfor 2N2218 and 2 N2219 0.8 Wfor 2N2221 and 2 N2222at Tcas e ≤ 25 °Cfor 2N2218 and 2 N22190.5 3W Wfor 2N2221 and 2 N22221.8WT st gStorage Temperature– 65 to 200°CT jJunction Temperature175°C Thermal DataRth j- caseThermal Resistance Junction-case    Max83.3℃/W Rth j-ambThermal Resistance Junction-ambient Max300℃/W Electrical Characteristics (Tamb = 25 °C unless otherwise specified)SymbolParameterTest ConditionsMin.Typ.Max.UnitICBOCollector Cutoff Current (IE = 0)VCB = 50 V  10nAVCB = 50 V  Tamb = 150℃  10μAIEBOEmitter Cutoff Current (IC = 0) VEB = 3 V  10nAV(BR)CBOColllector-base Breakdown Voltage (IE = 0)IC = 10 μA60  VV(BR)CEO*Collector-emitter Breakdown Voltage (IB = 0)IC = 10 mA30  VV(BR)EBO Emittter-base Breakdown Voltage (IC = 0)IE = 10 μA5  VVCE(sat)*Collector-emitter Saturation VoltageIC = 150 mA  IB = 15 mA  0.4VIC = 500 mA  IB = 50 mA  1.6VVBE(sat)*Base-emitter Saturation VoltageIC = 150 mA  IB = 15 mA  1.3VIC = 500 mA  IB = 50 mA  2.6VhFE*DC Current GainIC = 0.1 mA   VCE = 10 V35   IC = 1 mA      VCE = 10 V50   IC = 10 mA    VCE = 10 V75   IC = 150 mA  VCE = 10 V100 300 IC = 500 mA  VCE = 10 V30   IC = 150 mA  VCE = 1V50   fTTransition FrequencyIC = 20 mA   f = 100 MHz   VCE  = 20 V250  MHz CCBOCollector-base CapacitanceIE = 0   f = 100 kHz   VCB  = 10 V  8pFRe(hie) Real Part of Input ImpedanceIC = 20mA   f = 300 MHz   VCE  = 20 V  60Ω* Pulsed : pulse duration = 300 µs, duty cycle = 1 %. Mechanical DataTO-18 Mechanical DataDIM.  mm  inch MIN.TYP.MAX.MIN.TYP.MAX.A 12.7  0.500 B  0.49  0.019D  5.3  0.208E  4.9  0.193F  5.8  0.228G2.54  0.100  H  1.2  0.047I  1.16  0.045L45o  45o   TO39 Mechanical DataDIM.  mm  inch MIN.TYP.MAX.MIN.TYP.MAX.A12.7  0.500  B  0.49  0.019D  6.6  0.260E  8.5  0.334F  9.4  0.370G5.08  0.200  H  1.2  0.047I  0.9  0.035L  45o (typ.)    2N2222 DatasheetYou can download the datasheet of 2N2222 from the link given below:2N2222 Datasheet 2N2222 FAQWhat are 2N2222 High-Speed Switches?2N2222 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal cases. It is designed for high-speed switching applications at collector currents up to 500 MA and features useful current gain over a wide range of collector current, low leakage currents, and low saturation voltages. What is 2N2222 NPN transistor?2N2222 is an NPN transistor, which means it has a single P doped layer embedded between two N doped layers. It's a Bipolar junction transistor abbreviated as BJT. It has three terminals named as: Emitter. What is 2N2222 used for?The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds. It was originally made in the TO-18 metal can as shown in the picture. How fast can a 2N2222 switch?The 2N2222 has a combined rise-time, fall-time, and storage-time of 310ns, thus the maximum switching frequency is about 3MHz so it's not appropriate for this application. In which device 2N2222 transistor is used?It is typically used in automation & embedded projects. These transistors are used in Motor drive circuits like VFD or variable frequency drives. It is used as an amplifier to amplify voltage, current & power. What is the gain of a 2N2222?2N2222 has a gain value of 110 to 800, this value determines the amplification capacity of the transistor. The maximum amount of current that could flow through the Collector pin is 800mA, hence we cannot connect loads that consume more than 800mA using this transistor. Is PN2222 same as 2N2222?PN2222 vs 2N2222For most purposes, they are interchangeable. But there are subtle differences between them. Firstly, package, PN2222 is in a molded-epoxy TO-92; 2N2222 is in a TO-18 metal can. Secondly, gain and leakage characteristics, PN2222A is properly a repackaging of 2N2222A, a better version of 2N2222. What is the difference between 2N2222 and 2N2222A?The 2n2222A is a slight bit better in terms of Vceo, Vcbo, Vebo. But if you are not planning on stressing the part (higher voltages, etc) both will work well, especially for simple switching and logic circuits. The 2n2222 part is the older style part which might be the reason they are being offered at a low price. What is hFE BJT?hFE of a transistor is the current gain or amplification factor of a transistor. hFE (which is also referred to as β) is the factor by which the base current is amplified to produce the amplified current of the transistor. The datasheets will normally specify whether the hFE value is for DC or AC current gain. What is HFE and HFE?hFE is an abbreviation, and it stands for "Hybrid parameter forward current gain, common emitter", and is a measure of the DC gain of a junction transistor. So on a multimeter, it indicates a mode where the meter can measure (probably crudely), the HFE of a transistor.