The Kynix Components

ATtiny13 is a low-power CMOS 8-bit microcontroller based on the AVR enhanced RISC architecture. This is an introduction article about ATtiny13 the 8-bit microcontroller, after reading this, you will learn about ATtiny13's pinout, features, its alternatives, its difference between ATtiny13a, and how to program it, etc. Stay tuned fellas!This tutorial video shows in detailed how to program ATtiny13 with Arduino.CatalogATtiny13 DescriptionATtiny13 PinoutATtiny13 FeaturesATtiny13 ParameterATtiny13 Block DiagramATtiny13 AlternativeATtiny13 vs ATtiny13aATtiny13 ProgrammingATtiny13 PackageATtiny13 ManufacturerComponent DatasheetFAQATtiny13 DescriptionThe ATtiny13  is a low-power CMOS 8-bit microcontroller based on the AVR enhanced RISC architecture. It has 8 pins, 6 of which can be used as  I/O  pins. By executing powerful instructions in a single clock cycle, the ATtiny13  achieves throughputs approaching 1 MIPS per MHz allowing the system designer to optimize power consumption versus processing speed. ATtiny13 also includes debugWIRE  On-Chip debugging, an In-System Programmable SPI Port, and Low-Power Idle, Power-down, and Standby Modes. A programmable brownout detection circuit is also used. It operates at a wide range of voltages, from 1.8V to 5.5V. As a result, it can be used in logic-level operations at 1.8V, 3.3V, or 5.0V. The 1.8V input voltage for the ATtiny13  V, on the other hand, supports 0-4 Mhz operation. For frequencies up to 10 Mhz, the minimum voltage for ATtiny13  is 2.7V, and for frequencies up to 20 Mhz, the minimum voltage is 4.5V-5.5V.ATtiny13 PinoutATtiny13 AVR MicrocontrollerATtiny13 AVR Microcontroller Pinout Pin NumberPin NameDescription1(PCINT5/RESET/ADC0/dW)PB5Pin of Port B Bit 5 or ADC Input Channel 0 or debugWIRE I/O or Pin change Interrupt 0, source 3 or Reset pin mainly used for programming2(PCINT3/CLKI/ADC3) PB3Bidirectional I/O Pin of Port B Bit 3 or ADC Input Channel 3 or External Clock Input or Pin change Interrupt 0, source 33(PCINT4/ADC2) PB4Bidirectional I/O Pin of Port B Bit 4 or ADC Input Channel 2 or Pin change Interrupt 0, source 44GNDGround Pin of MCU5PB0 (MOȘI/AIN0/OC0A/PCINT0)Bidirectional I/O Pin of Port B Bit 0 or SPI MOSI used for programming or Analog comparator + or Pin change interrupt0, source 0 or Timer/Counter0 compare Match A Out6PB1(MISO/AIN1/OC0B/INT0/PCINT1)Bidirectional I/O Pin of Port B Bit 1 or Analog comparator input - or External input 0 input or Timer/Counter1 Compare Match B Out or Pin change Interrupt 0, source 1 or SPI MISO used for programming7PB2 (SCK/ADC1/T0/PCINT2)Bidirectional I/O Pin of Port B Bit 2 or ADC Input Channel 1 or Timer/Counter0 Clock Source or Serial Clock input or Pin change Interrupt 0, source 2 or external clock input, used for programming8VCCPositive Pin of MCU (+5V)ATtiny13 FeaturesHigh Performance, Low Power AVR  ® 8-Bit MicrocontrollerAdvanced  RISC Architecture          – 120 Powerful Instructions – Most Single Clock Cycle Execution          – 32 x 8 General Purpose Working Registers          – Fully Static Operation         – Up to 20 MIPS Througput at 20 MHzHigh Endurance Non-volatile Memory segments        – 1K Bytes of In-System Self-programmable Flash program memory        – 64 Bytes  EEPROM         – 64 Bytes Internal SRAM        – Write/Erase cyles: 10,000 Flash/100,000 EEPROM        – Data retention: 20 years at 85°C/100 years at 25°C (see page 6)        – Programming Lock for Self-Programming Flash &  EEPROM Data SecurityPeripheral Features       – One 8-bit Timer/Counter with Prescaler and Two PWM Channels       – 4-channel, 10-bit ADC  with Internal Voltage Reference       – Programmable Watchdog Timer with Separate On-chip Oscillator       – On-chip Analog ComparatorSpecial Microcontroller Features       –  debugWIRE On-chip Debug System       – In-System Programmable via SPI Port       – External and Internal Interrupt Sources       – Low Power Idle, ADC  Noise Reduction, and Power-down Modes       – Enhanced Power-on Reset Circuit       – Programmable Brown-out Detection Circuit       – Internal Calibrated OscillatorI/O and Packages       – 8-pin PDIP/SOIC: Six Programmable I/O Lines       – 20-pad MLF: Six Programmable I/O LinesOperating Voltage:       – 1.8 - 5.5V for ATtiny13  V       – 2.7 - 5.5V for ATtiny13  Speed Grade       – ATtiny13V  : 0 - 4 MHz @ 1.8 - 5.5V, 0 - 10 MHz @ 2.7 - 5.5V       –  ATtiny13 : 0 - 10 MHz @ 2.7 - 5.5V, 0 - 20 MHz @ 4.5 - 5.5VIndustrial Temperature RangeLow Power Consumption       – Active Mode:1 MHz, 1.8V: 240 µA       – Power-down Mode:       < 0.1 µA at 1.8VATtiny13 ParameterManufacturer:Microchip TechnologySeries:AVR® ATtinyPackaging:TubePart Status:ActiveCore Processor:AVRCore Size:8-BitSpeed:10MHzConnectivity:-Peripherals:Brown-out Detect/Reset POR PWM WDTNumber of I/O:6Program Memory Size:1KB (512 x 16)Program Memory Type:FLASHEEPROM Size:64 x 8RAM Size:64 x 8Voltage - Supply (Vcc/Vdd):1.8V ~ 5.5VData Converters:A/D 4x10bOscillator Type:InternalOperating Temperature:-40°C ~ 85°C (TA)Mounting Type:Through HolePackage / Case:8-DIP (0.300" 7.62mm)Supplier Device Package:8-PDIPBase Part Number:ATTINY13ATtiny13 Block DiagramATtiny13 AlternativeATtiny2313A (Exact Alternative with the new release)ATtiny417ATtiny28LATtiny48ATmega88PAATmega8AATmega8515ATmega8535ATmega645AATmega6490ATtiny13 vs ATtiny13aATtiny13aA-grade AVRs are minor improvements over the previous iteration; these improvements vary from chip to chip, e.g. the difference between ATtiny2313 and ATtiny2313A is different from the difference between ATmega128 and ATmega128A. To be more specific, the ATtiny13 is the original version and uses a different process technology than the ATtiny13A. The A-suffixed parts are fabricated with a low power process marketed as "picoPower", and the main difference is that they generally consume less power at the same voltage and frequency.          Regarding differences from the point of view of code compatibility, I see no reason why the ATtiny13A would not be code and binary compatible with programs written for the ATtiny13. However, the reverse is not strictly the case: While the instruction sets and most peripherals are identical, the ATtiny13A has the extra registers PRR (Power Reduction Register) and BODCR (Brown-Out Detector Control Register).ATtiny13 ProgrammingAVR microcontrollers can be programmed using various software options available on the market. Some people continue to program AVR MCUs in Assembly language. The information provided below pertains to the most advanced and widely used software and compiler developed by Atmel (now Microchip). To program the AVR microcontroller, we'll need an IDE (Integrated Development Environment), which is where the programming happens. A compiler is where our program is converted into MCU-readable HEX files. IDE: Atmel Studio 7Compiler: AVR and ARM Toolchains Microchip has provided both of these pieces of software for free. They can be obtained directly from their official website. I've also included a link for your convenience. Install them on your computer once they've been downloaded. We'll need a device called ATAtmel-ICE to dump or upload our code into AVR. The ATAAtmel - ICE programmer/debugger is a straightforward in-circuit debugger that is controlled by a PC running Atmel Studio on a Windows platform. The ATAAtmel-ICE programmer/debugger is an essential tool in the toolbox of a development engineer. The ATtiny13 Programming Circuit is depicted in the diagram below.Users can also use the USB ASP AVR Programming Device in addition to this official programmer for low-cost programming solutions. In addition, we will require other hardware such as a Perf board or breadboard, a Soldering station, AVR ICs, Crystal oscillators, capacitors, and so on.ATtiny13 PackageATtiny13 ManufacturerMicrochip Technology Inc. is a leading provider of microcontroller and analog semiconductors, providing low-risk product development, lower total system cost and faster time to market for thousands of diverse customer applications worldwide. Headquartered in Chandler, Arizona, Microchip offers outstanding technical support along with dependable delivery and quality.Component DatasheetATtiny13 Microcontroller DatasheetFAQWhat is the ATtiny13 based on?AVR enhanced RISC architecture How many pins does the ATtiny13 have?8 pins How many MIPS per MHz does the ATtiny13 achieve throughputs?1 MIPS per MHz What type of circuit is used in the ATtiny13?A programmable brownout detection circuit What language does some people continue to program AVR MCUs in?Assembly language

Product OverviewThe FT4232HL is a quad high speed USB 2.0 (480Mb/s) to multipurpose UART/MPSSE IC in 64 pin LQFP package. This 5th generation of USB device features four UARTs. Two of these have an option to independently configure an MPSSE engine. This allows FT4232H to operate as two UART/bit-bang ports plus two MPSSE (Multi Protocol Synchronous Serial Engine) engines used to emulate JTAG, SPI, I2C, bit-bang or other synchronous serial modes. This blog will introduce FT4232HL systematically from its features, pinout to its specifications, applications, also including FT4232HL datasheet and so much more. CatalogProduct OverviewFT4232HL FeaturesFT4232HL PinoutFT4232HL ApplicationsFT4232HL CAD ModelsFT4232HL Block DiagramFT4232HL ConfigurationsFT4232HL PackageFT4232HL SpecificationFT4232HL ManufacturerFT4232HL DatasheetUsing WarningsFT4232HL FAQ FT4232HL FeaturesEntire USB protocol handled on the chip and no USB specific firmware programming requiredUSB 2.0 high speed (480Mbits/s) and full speed (12Mbits/s) compatibleIndependent baud rate generators RS232/RS422/RS485 UART transfer data rate up to 12MbaudAdjustable receive buffer timeout3V single supply operating voltage rangeUSB bulk data transfer mode (512byte packets in high speed mode)UART interface supports 7/8 bit data, 1/2 stop bits and odd/even/mark/space/no parityLow operating and USB suspend currentAmbient operating temperature range from -40°C to 85°C FT4232HL PinoutThe following figure is the diagram of FT4232HL pinout. FT4232HL Pinout FT4232HL ApplicationsSingle chip USB to four channels UART (RS232, RS422 or RS485) or Bit-Bang interfaces.Single chip USB to 2 JTAG  channels plus 2 UARTS.Single chip USB to 1 JTAG  channel plus 3 UARTS.Single chip USB to 1 SPI channel plus 3 UARTS.Single chip USB to 2 SPI channels plus 2 UARTS.Single chip USB to 2 Bit-Bang channels plus 2 UARTS.Single chip USB to 1 SPI channel, plus 1 JTAG channel plus 2 UARTS.Single chip USB to 2 I2C channels plus 2 UARTS.Numerous combinations of 4 channels.Upgrading Legacy Peripheral Designs to USBField Upgradable USB ProductsCellular and cordless phone USB data transfer cables and interfaces.Interfacing MCU /PLD /FPGA  based designs to USBPDA to USB data transferUSB Smart Card ReadersUSB InstrumentationUSB Industrial ControlUSB MP3 Player InterfaceUSB FLASH Card Reader / WritersSet Top Box PC - USB interfaceUSB Digital Camera InterfaceUSB Bar Code Readers FT4232HL CAD ModelsThe following are FT4232HL Symbol, Footprint, and 3D Model . FT4232HL Symbol FT4232HL Footprint FT4232HL 3D Model FT4232HL Block DiagramThe following figure shows the block diagram of FT4232HL. FT4232HL Block Diagram FT4232HL ConfigurationsThe following figure illustrates the FT4232H in a typical USB bus powered design configuration. A USB bus powered device gets its power from the USB bus. In this application, the FT4232H requires that the VBUS (USB +5V) is regulated down to +3.3V (using an LDO ) to supply the VCCIO, VPLL, VPHY and VREGIN. FT4232HL USB Bus Powered Configuration1 VREGIN is the +3.3V input to the on chip +1.8V regulator. The output of the on chip LDO regulator(+1.8V) drives the FT4232H core supply (VCORE). This requires a minimum of a 3.3uF filter capacitor.  FT4232HL USB Bus Powered Configuration2FT4232HL PackageThe following diagram shows the FT4232HL package. FT4232HL Package Notes:All dimensions are in mm.The bottom side central solder pad must be connected to the ground of the system. FT4232HL SpecificationProduct AttributeAttribute ValueManufacturer:FTDIProduct Category:USB Interface ICSeries:FT4232HProduct:USB ControllersType:Bridge, USB to UARTMounting Style:SMD/SMTPackage / Case:LQFP-64Standard:USB 2.0Speed:High Speed (HS)Data Rate:480 Mb/sSupply Voltage - Min:1.62 VSupply Voltage - Max:1.98 VOperating Supply Current:70 mAMinimum Operating Temperature:- 40 CMaximum Operating Temperature:+ 85 CBrand:FTDIMoisture Sensitive:YesOperating Supply Voltage:1.8 V, 3.3 VProduct Type:USB Interface IC FT4232HL ManufacturerFTDI Chip develops innovative silicon solutions that enhance interaction with today's technology. The company’s major objective is to bridge technologies in order to support engineers with highly sophisticated, feature-rich, robust and simple-to-use product platforms. FTDI Chip's long-established, continuously expanding USB product line boasts universally recognized products. The company's Embedded Video Engine (EVE) graphic controllers each pack display, audio and touch functionality onto a single chip allowing dramatic reductions in the development time and bill-of-materials costs involved in human machine interfaces (HMIs) implementation. FTDI Chip also provides families of highly differentiated, speed-optimized microcontrollers with augmented connectivity. FT4232HL DatasheetYou can download FT4232HL datasheet from the link given below:FT4232HL Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. FT4232HL FAQWhat is a quad high speed USB 2.0 (480Mb/s) to multipurpose UART/MPSSE IC in 64 pin?FT4232HL. How many UART/bit-bang ports does FT4232H operate as? Two. What is a protocol converter?A Protocol Converter is a device used to convert standard or proprietary protocol of one device to the protocol suitable for the other device or tools to achieve the desired interoperability. The major protocol translation messages involve conversion of data messages, events, commands, and time synchronization. How does a protocol converter work?The protocols are software installed on routers that transfer commands from one system to another. A protocol converter works by utilizing an internal master protocol for communicating with the external devices. The data collected is then used for updating the converter's internal database. Which network device is also known as a protocol converter?Gateways are also called protocol converters and can operate at any network layer. 

CatalogDescriptionFeaturesInternal Schematic DiagramAbsolute Maximum RatingsThermal DataElectrical CharacteristicsTO-3 Mechanical Data2N3055 Datasheet2N3055 FAQDescriptionThe 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. The complementary PNP type is MJ2955. Features■ STMicroelectronics preferred salestypes■ Complementary NPN-PNP devices Internal Schematic DiagramAbsolute Maximum RatingsSymbolParameterValueUnitVCBOCollector-Base Voltage (IE = 0)100VVCERCollector-Emitter Voltage (RBE ≤100Ω)70VVCEOCollector-Emitter Voltage (IB = 0)60VVEBOEmitter-Base Voltage (IC = 0)7VICCollector Current15AIBBase Current7APtotTotal Dissipation at Tc ≤ 25 oC115WTstgStorage Temperature-65 to 200o CTjMax. Operating Junction Temperature200o C Thermal DataRthj-caseThermal  Resistance  Junction-case Max1.5oC/W Electrical Characteristics Tcase = 25℃ unless otherwise specifiedSymbolParameterTest ConditionsMin.Typ.Max.UnitICEX Collector Cut-offVCE = 100 V  1mACurrent (VBE = -1.5V)VCE = 100 V Tj = 150 oC  5mAICEOCollector Cut-off Current (IB = 0)VCE = 30 V  0.7mAIEBOEmitter Cut-off Current (IC = 0)VEB = 7 V  5mAVCEO(sus)*Collector-Emitter Sustaining Voltage(IB = 0)IC = 200 mA60  VVCER( sus)*Collector-Emitter SustainingVoltage (RBE = 100 W)IC = 200 mA70  VVCE(sat)* Collector-EmitterIC = 4 A IB = 400 mA  1VSaturation VoltageIC = 10 A IB = 3.3 A  3VVBE*Base-Emitter VoltageIC  = 4 A VCE = 4 A  1.8VhFE* DC Current Gain IC  = 4 A VCE = 4 A20 70 IC = 10 A VCE = 4 A5   fTTransition frequencyIC = 0.5 A VCE = 10 V3  MHzIs/b*Second Breakdown Collector CurrentVCE = 40 V2.87  A∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %For PNP types voltage and current values are negative TO-3 Mechanical DataDIM. mminchMIN.TYP.MAX.MIN.TYP.MAX.A11.00 13.100.433 0.516B0.97 1.150.038 0.045C1.50 1.650.059 0.065D8.32 8.920.327 0.351E19.00 20.000.748 0.787G10.70 11.100.421 0.437N16.50 17.200.649 0.677P25.00 26.000.984 1.023R4.00 4.090.157 0.161U38.50 39.301.515 1.547V30.00 30.301.187 1.193 2N3055 DatasheetYou can download the datasheet of 2N3055 from the link given below:2N3055 Datasheet 2N3055 FAQWhat is 2N3055 transistor?The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. Its numbering follows the JEDEC standard. It is a transistor type of enduring popularity. What are power transistors used for?The power transistor is a transistor that used in high power amplifier and power supplies. Power transistors are suited for application where a lot of power is being used current and voltage. It is a junction transistor, is designed to handle high current and power and also used in audio and switching circuits. How many types of power transistors are there?Transistors are broadly divided into three types: bipolar transistors (bipolar junction transistors: BJTs), field-effect transistors (FETs), and insulated-gate bipolar transistors (IGBTs). What is the difference between transistor and power transistor?A transistor is a three-terminal semiconducting device. A power transistor is larger than a normal transistor and is capable of carrying more current without melting or burning the transistor. Are all power transistors the same?Although they are slightly different, for all circuit equivalences of this nature these transistor parameters are the same. Choosing a replacement transistor with approximately the same current gain is necessary. Normally it is not a problem to choose a replacement transistor with a higher gain. 

Product OverviewThe LD1117 is a low drop voltage regulator able to provide up to 800 mA of output current, available even in adjustable version (VREF = 1.25 V). Concerning fixed versions, are offered the following output voltages: 1.2 V, 1.8 V, 2.5 V, 2.85 V, 3.3 V and 5.0 V. The device is supplied in: SOT-223, DPAK, SO-8 and TO-220. The SOT-223 and DPAK surface mount packages optimize the thermal characteristics even offering a relevant space saving effect. High efficiency is assured by NPN pass transistor. In fact in this case, unlike than PNP one, the quiescent current flows mostly into the load. Only a very common 10 µF minimum capacitor is needed for stability. On chip trimming allows the regulator to reach a very tight output voltage tolerance, within ± 1 % at 25 °C. The adjustable LD1117 is pin to pin compatible with the other standard. Adjustable voltage regulators maintaining the better performances in terms of drop and tolerance. This blog will introduce LD1117V33 systematically from its features, pinout to its specifications, applications, also including LD1117V33 datasheet and so much more. CatalogProduct OverviewLD1117V33 FeaturesLD1117V33 PinoutLD1117V33 CAD ModelsLD1117V33 Block DiagramLD1117V33 Circuit DiagramLD1117V33 PackageLD1117V33 SpecificationLD1117V33 ManufacturerLD1117V33 DatasheetUsing WarningsLD1117V33 FAQ LD1117V33 FeaturesLow dropout voltage (1 V typ.)2.85 V device performances are suitable forSCSI-2 active terminationOutput current up to 800 mAFixed output voltage of: 1.2 V, 1.8 V, 2.5 V,3.3 V, 5.0 VAdjustable version availability (VREF = 1.25 V)Internal current and thermal limitAvailable in ± 1 % (at 25 °C) and 2 % in fulltemperature rangeSupply voltage rejection: 75 dB (typ.) LD1117V33 PinoutThe following figures are the diagrams of LD1117V33 pinout. SO-8 SOT-223 TO-220  LD1117V33 CAD ModelsThe following are LD1117V33 Symbol, Footprint, and 3D Model. LD1117V33 Symbol LD1117V33 Footprint LD1117V33 3D Model LD1117V33 Block DiagramThe following figure shows the block diagram of LD1117V33. LD1117V33 Block Diagram LD1117V33 Circuit DiagramThe following are the application circuit diagrams of LD1117V33. LD1117V33 Application circuit LD1117V33 Negative supply Circuit for increasing output voltage LD1117V33 PackageThe following diagram shows the LD1117V33 package. LD1117V33 Package LD1117V33 SpecificationProduct AttributeAttribute ValueManufacturer:STMicroelectronicsProduct Category:LDO Voltage RegulatorsMounting Style:Through HolePackage / Case:TO-220-3Output Voltage:3.3 VOutput Current:950 mANumber of Outputs:1 OutputPolarity:PositiveQuiescent Current:5 mAInput Voltage, Min:3.3 VInput Voltage, Max:15 VOutput Type:FixedMinimum Operating Temperature:0 CMaximum Operating Temperature:+ 125 CDropout Voltage:1 VSeries:LD1117Packaging:TubeBrand:STMicroelectronicsDropout Voltage - Max:1.1 VHeight:9.15 mmIb - Input Bias Current:5 mALength:10.4 mmLine Regulation:6 mVLoad Regulation:10 mVPd - Power Dissipation:12 WProduct Type:LDO Voltage Regulators LD1117V33 ManufacturerSTMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.  LD1117V33 DatasheetYou can download LD1117V33 datasheet from the link given below:LD1117V33 Datasheet Using WarningsNote: Please check their parameters and pin configuration before replacing them in your circuit. LD1117V33 FAQHow much output current is the LD1117 able to provide?800 mA. What does the SOT-223 and DPAK surface mount packages optimize? Thermal characteristics. What ensures the high efficiency of the LD1117? NPN pass transistor. What is the adjustable LD1117? Pin to pin compatible with the other standard. What is a voltage regulator?Voltage regulator, any electrical or electronic device that maintains the voltage of a power source within acceptable limits. The voltage regulator is needed to keep voltages within the prescribed range that can be tolerated by the electrical equipment using that voltage.

CatalogDescriptionFeaturesApplications / BenefitsMaximum RatingsMechanical and PackagingSymbols & DefinitionsElectrical CharacteristicsGraphsPackage Dimensions1N914 Datasheet1N914 FAQ DescriptionThis 1N914 JEDEC registered switching/signal diode features internal metallurgical bonded construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with very fast switching speeds, is hermetically sealed and bonded into a double-plug DO-35 package. It may be used in a variety of very high speed applications including switchers, detectors, transient OR'ing, logic arrays, blocking, as well as low-capacitance steering diodes, etc. Microsemi also offers a variety of other switching/signal diodes. FeaturesJEDEC registered 1N914 number.Hermetically sealed glass construction.Metallurgically bonded.Double plug construction.Very low capacitance.Very fast switching speeds with minimal reverse recoverytimes.JAN, JANTX, and JANTXV qualifications are availableper MIL-PRF-19500/116.RoHS compliant version available (commercial gradeonly). Applications / BenefitsHigh frequency data lines.Small size for high density mounting using flexiblethru-hole leads (see package illustration).RS-232 & RS–422 interface networks.Ethernet 10 base T.Low-capacitance steering diodes.LAN.Computers. Maximum Ratings @ 25 ºC unless otherwise statedParameters/Test ConditionsSymbolValueUnitJunction and Storage TemperatureTJ & TSTG-65 to +175℃Thermal Resistance Junction-to-Lead (1)RӨJL250℃/WThermal Resistance Junction-to-Ambient (2)RӨJA325℃/WMaximum Breakdown VoltageV(BR)100VWorking Peak Reverse VoltageVRWM75VAverage Rectified Current @ TA = 75 ºC (3)IO200mANon-Repetitive Sinusoidal Surge Current (tp = 8.3 ms)IFSM2A (pk)NOTES:1.Lead length = 0.375 inch (9.35 mm). See Figure 2 for thermal impedance curves.2.TA= +75 on printed circuit board (PCB), PCB = FR4 - 0.0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, in still air; pads for axial = 0.092 inch (2.34 mm) diameter, strip = 0.030 inch (0.76 mm) x 1 inch (25.4 mm) long, lead length L ≤ 0.187 inch (≤ 4.75 mm); RӨJAwith a defined PCB thermal resistance condition included, is measured at IO = 200 mA.3.See Figure 1 for derating. Mechanical and PackagingCase: Hermetically sealed glass package.Terminals: Tin/lead plated or RoHS compliant matte-tin (commercial grade only) over copper clad steel. Solderable per MILSTD-750, method 2026.Polarity: Cathode indicated by band.Marking: Part number.Tape & Reel option: Standard per EIA-296. Consult factory for quantities.Weight: 0.2 grams. Symbols & DefinitionsSymbolDefinitionIRReverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.IOAverage Rectified Forward Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle.trrReverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.VFForward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum value).VRReverse Voltage: The reverse voltage dc value, no alternating component.VRWMWorking Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV.Electrical Characteristics @ 25 ºC unless otherwise notedFORWARD VOLTAGE VF1  @ IF=10 mAFORWARD VOLTAGE VF2  @ IF=50 mAREVERSE RECOVERY TIME trr (Note 1)FORWARD RECOVERY TIME tfr (Note 2)REVERSE CURRENT IR1 @ 20 VREVERSE CURRENT IR2 @ 75 VREVERSE CURRENT IR3 @ 20 V TA=150℃REVERSE CURRENT IR4 @ 75 V TA=150℃CAPACI- TANCE C (Note 3)CAPACI- TANCE C (Note 4)VVnsnsnAμAμAμApFpF0.81.2520250.5357542.8NOTE 1: IF = IR = 10 mA, RL = 100 Ohms.NOTE 2: IF = 50 mA.NOTE 3: VR = 0 V, f = 1 MHz, VSIG = 50 mV (pk to pk).NOTE 4: VR = 1.5V, f = 1 MHz, VSIG = 50 mV (pk to pk). GraphsFigure 1 – Temperature – Current Derating  Figure 2 – Thermal Impedance Package DimensionsNOTES:1.Dimensions are in inch.2.Millimeters are given for general information only.3.Package contour optional within BD and length BL. Heat slugs, if any, shall be included within this cylinder but shall not be subject to minimum limit of BD. The BL dimension shall include the entire body including slugs.4.Within this zone lead, diameter may vary to allow for lead finishes and irregularities other than heat slugs.5.In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. 1N914 DatasheetYou can download the datasheet of 1N914 from the link given below:1N914 Datasheet1N914 FAQWhat is a 1N914 diode used for?The 1N914 is a small signal diode which can handle low voltage and low current. The diode can switch at high speed and hence normal used in switching applications and not in rectifier applications. What is a fast switching diode?The switching diode has the characteristics of fast switching speed, small size, long life, and high reliability. It is widely used in switching circuits, detection circuits, high-frequency and pulse rectification circuits, and automatic control circuits of electronic equipment. What is the switching diode used for?A switching diode is suitable for switching a small signal of up to 100 mA, acting as a rectifier. In contrast, a rectifier diode is used for AC line rectification (from alternating current to direct current). Switching diodes are designed to handle a voltage of less than tens of volts. How do you identify a glass diode?To identify a glass diode, observe its coloration and label, and then input its part number into a database. Examine the diode carefully and note the color of the casing and the band. The band color is usually black, though some are white or red. Why are some diodes glass?Early semiconductor diodes were mostly glass packaged which provided the advantage that they were hermetic and did not depend on passivation of the chip to survive heat and humidity. The glass package also allows a very high operating temperature. Ceramic packaged diodes have also been produced. 

CatalogGeneral DescriptionFeaturesAbsolute Maximum RatingsThermal CharacteristicsElectrical CharacteristicsOrdering Information Typical Electrical CharacteristicsBS170 Datasheet BS170 FAQ General DescriptionThese N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features■ High density cell design for low RDS(ON).■ Voltage controlled small signal switch.■ Rugged and reliable.■ High saturation current capability. Absolute Maximum Ratings TA = 25°C unless otherwise notedSymbolParameterBS170MMBF170UnitsVDSSDrain-Source Voltage60VVDGRDrain-Gate Voltage (RGS ≤ 1MΩ)60VVGSSGate-Source Voltage± 20VID Drain Current - Continuous- Pulsed 500500mA 1200800TJ, TSTGOperating and Storage Temperature Range- 55 to 150°CTLMaximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds300°C Thermal Characteristics TA = 25°C unless otherwise notedSymbolParameterBS170MMBF170UnitsPDMaximum Power Dissipation Derate above 25°C8306.63002.4mW mW/°CRΘJAThermal Resistance, Junction to Ambient150417° C/W Electrical Characteristics TA=25°C unless otherwise notedSymbolParameterConditionsTypeMin.Typ.Max.UnitsOFF CHARACTERISTICSBVDSSDrain-Source Breakdown VoltageVGS = 0V, ID = 100mAAll60  VIDSSZero Gate Voltage Drain CurrentVDS = 25V, VGS = 0VAll  0.5mAIGSSFGate - Body Leakage, ForwardVGS = 15V, VDS = 0VAll  10nAON CHARACTERISTICS (Notes 1)VGS(th)Gate Threshold VoltageVDS = VGS, ID = 1mAAll0.82.13VRDS(ON)Static Drain-Source On-ResistanceVGS = 10V, ID = 200mAAll 1.25WgFS Forward Transconductance  VDS = 10V, ID = 200mABS170 320 mSVDS ≥ 2 VDS(on), ID = 200mAMMBF170 320  Dynamic CharacteristicsCissInput CapacitanceVDS = 10V, VGS = 0V, f = 1.0MHz  All 2440pFCossOutput CapacitanceAll 1730pFCrssReverse Transfer CapacitanceAll 710pFSwitching Characteristics (Notes 1)ton Turn-On Time VDD = 25V, ID = 200mA, VGS = 10V, RGEN = 25WBS170  10nsVDD = 25V, ID = 500mA, VGS = 10V, RGEN = 50WMMBF170  10 toff Turn-Off Time VDD = 25V, ID = 200mA, VGS = 10V, RGEN = 25WBS170  10nsVDD = 25V, ID = 500mA, VGS = 10V, RGEN = 50WMMBF170  10 Note:1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% Ordering InformationPart NumberPackagePackage TypeLead FramePin arrayBS170TO-92BULKSTRAIGHTD G SBS170_D26ZTO-92Tape and ReelFORMINGD G SBS170_D27ZTO-92Tape and ReelFORMINGD G SBS170_D74ZTO-92AMMOFORMINGD G SBS170_D75ZTO-92AMMOFORMINGD G SMMBF170SOT-23Tape and Reel   Typical Electrical Characteristics                 BS170 DatasheetYou can download the datasheet of BS170 from the link given below:BS170 Datasheet BS170 FAQWhat is N channel transistor?Channel MOSFET is a type of metal oxide semiconductor field-effect transistorthat is categorized under the field-effect transistors (FET). This type of transistor is also known as an insulated-gate field-effect transistor (IGFET). Sometimes it is also known as a metal-insulator field-effect transistor (MIFET). What is N channel Mosfet?A N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel. What is the difference between Transistor and MOSFET?The Bipolar Junction Transistor (BJT) is a current-driven device (in contrast, MOSFET is voltage-driven) that is widely used as an amplifier, oscillator, or switch, amongst other things. In either case, the current's direction in the base is the same as the collector. What is N-channel depletion MOSFET?The depletion-mode MOSFET has a physically implanted channel connecting the source side and the drain side. In an NMOS, the channel is an n-type silicon region connecting the highly doped n-type source and the n-type drain regions on the top of a p-type substrate. Why N-Channel MOSFET is widely used?The mobility of electrons, which are carriers in the case of an n-channel device, is greater than that of holes, which are the carriers in the p-channel device. Thus an n-channel device is faster than a p-channel device. The N-channel transistor has lower on-resistance and gate capacitance for the same die area.