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IRFZ44 Power MOSFETs Datasheet PDF Download [FAQ]

  • Contents

Catalog

Features

Description

Absolute Maximum Ratings

Thermal Resistance

Electrical Characteristics

Source-Drain Ratings and Characteristics

Peak Diode Recovery dv/dt Test Circuit

Package Outline

Part Marking Information

Datasheet PDF Download

IRFZ44 FAQ

 

Features

• Advanced Process Technology

  • Ultra Low On-Resistance

• Dynamic dv/dt Rating

  • 175°C OperatingTemperature

• Fast Switching

  • Fully AvalancheRated
  • Lead-Free

 

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.


Absolute Maximum Ratings

 

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

49

 

A

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

35

IDM

Pulsed Drain Current ➀

160

PD @TC = 25°C

Power Dissipation

94

W

 

Linear Derating Factor

0.63

W/°C

VGS

Gate-to-Source Voltage

± 20

V

IAR

Avalanche Current➀

25

A

EAR

Repetitive Avalanche Energy➀

9.4

mJ

dv/dt

Peak Diode Recovery dv/dt ➂

5.0

V/ns

TJ

TSTG

Operating Junction and

Storage Temperature Range

-55 to + 175

 

°C

 

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

 

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

 


Thermal Resistance

 

Parameter

Typ.

Max.

Units

RqJC

Junction-to-Case

–––

1.5

 

°C/W

RqCS

Case-to-Sink, Flat, Greased Surface

0.50

–––

RqJA

Junction-to-Ambient

–––

62


Electrical Characteristics

@ TJ = 25°C (unless otherwise specified)

 

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

55

–––

–––

V

VGS = 0V, ID = 250µA

DV(BR)DSS/DTJ

Breakdown Voltage Temp. Coefficient

–––

0.058

–––

V/°C

Reference to 25°C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance

–––

–––

17.5

mL

VGS = 10V, ID = 25A     

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

19

–––

–––

S

VDS = 25V, ID = 25A 

IDSS

Drain-to-Source Leakage Current

–––

–––

25

µA

VDS = 55V, VGS = 0V

–––

–––

250

VDS = 44V, VGS = 0V, TJ = 150°C

IGSS

Gate-to-Source Forward Leakage

–––

–––

100

nA

VGS = 20V

Gate-to-Source Reverse Leakage

–––

–––

-100

VGS = -20V

Qg

Total Gate Charge

–––

–––

63

 

nC

ID = 25A VDS = 44V

VGS = 10V, See Fig. 6 and 13

Qgs

Gate-to-Source Charge

–––

–––

14

Qgd

Gate-to-Drain ("Miller") Charge

–––

–––

23

td(on)

Turn-On Delay Time

–––

12

–––

 

ns

VDD = 28V ID = 25A RG = 12L

VGS = 10V, See Fig. 10  

tr

Rise Time

–––

60

–––

td(off)

Turn-Off Delay Time

–––

44

–––

tf

Fall Time

–––

45

–––

LD

Internal Drain Inductance

–––

4.5

–––

 

nH

Between lead, D

6mm (0.25in.)

from package G

and center of die contact S

LS

Internal Source Inductance

–––

7.5

–––

Ciss

Input Capacitance

–––

1470

–––

 

 

pF

VGS = 0V VDS = 25V

ƒ = 1.0MHz, See Fig. 5

Coss

Output Capacitance

–––

360

–––

Crss

Reverse Transfer Capacitance

–––

88

–––

EAS

Single Pulse Avalanche Energy

–––

530 

150®

mJ

IAS = 25A, L = 0.47mH


Source-Drain Ratings and Characteristics

 

Parameter

Min.

Typ.

Max.

Units

Conditions

IS

Continuous Source Current

(Body Diode)

–––

–––

49

 

A

MOSFET symbol D

showing the

integral reverse G

p-n junction diode. S

ISM

Pulsed Source Current

(Body Diode)➀

–––

–––

160

VSD

Diode Forward Voltage

–––

–––

1.3

V

TJ = 25°C, IS = 25A, VGS = 0V  

trr

Reverse Recovery Time

–––

63

95

ns

TJ = 25°C, IF = 25A

di/dt = 100A/µs  

Qrr

Reverse Recovery Charge

–––

170

260

nC

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)


Peak Diode Recovery dv/dt Test Circuit

For-N-channel-HEXFET-power-MOSFETs-01

 

For-N-channel-HEXFET-power-MOSFETs-02


Package Outline

Figure-IRFZ44-Package-Outline


Part Marking Information

Figure-IRFZ44-Part-Marking-Information

 

Datasheet PDF Download

You can download the datasheet from the link given below.

IRFZ44-Datasheet

 

IRFZ44 FAQ

What is the use of IRFZ44 transistor?

The IRFZ44N is a N-channel MOSFET with a high drain current of 49A and low Rds value of 17.5 mΩ. It also has a low threshold voltage of 4V at which the MOSFET will start conducting. Hence it is commonly used with microcontrollers to drive with 5V.


What is an channel Mosfet?

What is N-Channel MOSFET? The MOSFET formed in which the conduction is due to the channel of majority charge carriers called electrons. When this MOSFET is activated as ON this condition results in the maximum amount of the current flow through the device. This type of MOSFET is defined as N-channel MOSFET.


What is a MOSFET power supply?

MOSFETs are semiconductor components mostly used in switching applications and characterized by high voltages and high currents. Their higher efficiency and higher switching capacity at high speeds make them the optimal choice in power supply design.

 

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