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IRFP460 Power MOSFET Datasheet PDF Download [FAQ]

  • Contents

 

Catalog

Features

Applications

Maximum Ratings

Characteristic Values

TO-247 AD Outline

Characteristic Curves

Datasheet PDF Download

IRFP460 FAQ

 

Features

Repetitive avalanche energy rated
Fast switching times
Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure
High Commutating dv/dt Rating

 

Applications

Switching Power Supplies 
Motor controls

 

Maximum Ratings

Symbol Test Conditions Maximum Ratings
VDSS TJ = 25°C to 150°C 500V
VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500V
VGS Continuous ±20V
VGSM Transient ±30V
D25 TC = 25°C 20A
DM TC = 25°C, pulse width limited by TJM 80A
AR   20A
EAR TC = 25°C 28 mJ
dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,TJ ≤ 150°C, RG = 2 Ω 3.5 V/ns
PD TC = 25°C 260 W
TJ   -55 ... +150°C
TJM   150°C
Tstg   -55 ... +150°C
Md Mounting torque  1.15/10 Nm/lb.in.
Weight   6g
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s   300 °C

 

Characteristic Values

Symbol Test Conditions   Characteristic Values (TJ = 25°C, unless otherwise specified)    
      min. typ. max.
VDSS VGS = 0 V, ID = 250 μA   500   V
VGS(th) VDS = VGS, ID = 250 μA   2   4V
GSS VGS = ±20 VDC, VDS = 0       ±100 nA
DSS VDS = 0.8 • VDSS                                                        TJ = 25°C     25 µA
  VGS = 0 V                                                                     TJ = 125°C     250 µA
RDS(on) VGS = 10 V, ID = 12 A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %     0.25 0.27Ω

 

characteristics-01

 

characteristics-02

 

TO-247 AD Outline

TO-247-AD-Outline

 

Characteristic Curves

characteristics-curves-01

 

characteristics-curves-02

 

Datasheet PDF Download

You can download the datasheet the link given below.

IRFP460-Datasheet

 

IRFP460 FAQ

What is IRFP460?

IRFP460 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

 

What is N channel Mosfet?

N-Channel MOSFET is a type of metal oxide semiconductor field-effect transistor that is categorized under the field-effect transistors (FET). MOSFET transistor operation is based on the capacitor. This type of transistor is also known as an insulated-gate field-effect transistor (IGFET).

 

Why N-channel MOSFET is widely used?

N-channel MOSFETs are easier to work with, and are the most commonly used type. They are also easier to manufacture, and thus are available for lower prices with higher performance than p-channel MOSFETs.

 

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