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IRF630 Power MOSFET Datasheet PDF Download [FAQ]

  • Contents

 

Catalog

PRODUCT SUMMARY

FEATURES

DESCRIPTION

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS

THERMAL RESISTANCE RATINGS

SPECIFICATIONS

TYPICAL CHARACTERISTICS

TO-220-1

Datasheet PDF Download

IRF630 FAQ

 

PRODUCT SUMMARY

VDS (V)

200

RDS(on) (L)

VGS = 10 V

0.40

Qg max. (nC)

43

Qgs (nC)

7.0

Qgd (nC)

23

Configuration

Single


FEATURES

  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements

 

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

 

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.


ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free

IRF630PbF

Lead (Pb)-free and halogen-free

IRF630PbF-BE3


ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

VDS

200

V

Gate-source voltage

VGS

± 20

Continuous drain current

VGS at 10 V

TC = 25 °C

ID

9.0

 

A

TC = 100 °C

5.7

Pulsed drain current a

IDM

36

Linear derating factor

 

0.59

W/°C

Single pulse avalanche energy b

EAS

250

mJ

Repetitive avalanche current a

IAR

9.0

A

Repetitive avalanche energy a

EAR

7.4

mJ

Maximum power dissipation

TC = 25 °C

PD

74

W

Peak diode recovery dV/dt c

dV/dt

5.0

V/ns

Operating junction and storage temperature range

TJ, Tstg

-55 to +150

°C

Soldering recommendations (peak temperature) d

For 10 s

 

300

Mounting torque

6-32 or M3 screw

 

10

lbf · in

1.1

N · m


THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum junction-to-ambient

RthJA

-

62

 

°C/W

Case-to-sink, flat, greased surface

RthCS

0.50

-

Maximum junction-to-case (drain)

RthJC

-

1.7


SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

200

-

-

V

VDS temperature coefficient

DVDS/TJ

Reference to 25 °C, ID = 1 mA

-

0.24

-

V/°C

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

-

4.0

V

Gate-source leakage

IGSS

VGS = ± 20 V

-

-

± 100

nA

Zero gate voltage drain current

IDSS

VDS = 200 V, VGS = 0 V

-

-

25

μA

VDS = 160 V, VGS = 0 V, TJ = 125 °C

-

-

250

Drain-source on-state resistance

RDS(on)

VGS = 10 V

ID = 5.4 A b

-

-

0.40

L

Forward transconductance

gfs

VDS = 50 V, ID = 5.4 A

3.8

-

-

S

Dynamic

Input capacitance

Ciss

VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

-

800

-

 

pF

Output capacitance

Coss

-

240

-

Reverse transfer capacitance

Crss

-

76

-

Total gate charge

Qg

 

VGS = 10 V

 

ID = 5.9 A, VDS = 160 V,

see fig. 6 and 13 b

-

-

43

 

nC

Gate-source charge

Qgs

-

-

7.0

Gate-drain charge

Qgd

-

-

23

Turn-on delay time

td(on)

 

VDD = 100 V, ID = 5.9 A,

Rg = 12 L, RD = 16 L, see fig. 10 b

-

9.4

-

 

 

ns

Rise time

tr

-

28

-

Turn-off delay time

td(off)

-

39

-

Fall time

tf

-

20

-

Gate input resistance

Rg

f = 1 MHz, open drain

0.6

-

3.3

L

Internal drain inductance

LD

Between lead, D

6 mm (0.25") from package and center of

G

die contact

S

-

4.5

-

 

nH

Internal source inductance

LS

-

7.5

-

Drain-Source Body Diode Characteristics

Continuous source-drain diode current

IS

MOSFET symbol

D

showing the

integral reverse G

p - n junction diode

S

-

-

9.0

 

A

Pulsed diode forward current a

ISM

-

-

36

Body diode voltage

VSD

TJ = 25 °C, IS = 9.0 A, VGS = 0 V b

-

-

2.0

V

Body diode reverse recovery time

trr

TJ = 25 °C, IF = 5.9 A, dI/dt = 100 A/ms

-

170

340

ns

Body diode reverse recovery charge

Qrr

-

1.1

2.2

nC

Forward turn-on time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)


TYPICAL CHARACTERISTICS

Figure-IRF630-Typical-Characteristics

 

Figure-IRF630-Typical-Characteristics-02

 

Figure-IRF630-Typical-Characteristics-03

 

Figure-IRF630-Typical-Characteristics-04

 

 

TO-220-1

Figure-TO-220-1

DIM.

MILLIMETERS

INCHES

MIN.

MAX.

MIN.

MAX.

A

4.24

4.65

0.167

0.183

b

0.69

1.02

0.027

0.040

b(1)

1.14

1.78

0.045

0.070

c

0.36

0.61

0.014

0.024

D

14.33

15.85

0.564

0.624

E

9.96

10.52

0.392

0.414

e

2.41

2.67

0.095

0.105

e(1)

4.88

5.28

0.192

0.208

F

1.14

1.40

0.045

0.055

H(1)

6.10

6.71

0.240

0.264

J(1)

2.41

2.92

0.095

0.115

L

13.36

14.40

0.526

0.567

L(1)

3.33

4.04

0.131

0.159

Ø P

3.53

3.94

0.139

0.155

Q

2.54

3.00

0.100

0.118

ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031

 

Figure-Package-Picture

 

Datasheet PDF Download

You can download the datasheet the link given below.

IRF630-Datasheet

 

IRF630 FAQ

What is IRF630?

IRF630 is a third-generation power MOSFET specially designed for applications which required high-speed switching. This component is a great combination of low on-state resistance, cost-effective, and rugged design. IRF630 is designed to sustain load voltage up to 200 V and 9 A current.


What is N channel Mosfet?

N-Channel MOSFET is a type of metal oxide semiconductor field-effect transistor that is categorized under the field-effect transistors (FET). MOSFET transistor operation is based on the capacitor. This type of transistor is also known as an insulated-gate field-effect transistor (IGFET).


Is power MOSFET same as MOSFET?

Power MOSFET is a type of MOSFET which is specially meant to handle high levels of power. These exhibit high switching speed and can work much better in comparison with other normal MOSFETs in the case of low voltage levels. However its operating principle is similar to that of any other general MOSFET.

 

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