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IRF630 Mosfet: Datasheet, Pinout, Circuit [Video&FAQ]

  • Contents

Product Overview

The IRF630 is a through hole, 200V N channel mesh overlay II power MOSFET  in the TO-220 package. This power MOSFET is designed using the company's consolidated strip layout based MESH OVERLAY process which matches and improves the performances. Features extremely high dv/dt capability, very low intrinsic capacitances and gate charge minimized.

 

This blog will introduce IRF630 systematically from its features, pinout to its specifications, applications, also including IRF630 datasheet and so much more.

 

Video: checking MOSFET very simple using continuity tester how to check mosfet

Catalog

Product Overview

IRF630 Features

IRF630 Pinout

IRF630 Applications

Where We Can Use it & How to Use

IRF630 Equivalents

IRF630 CAD Models

How to Get Long Life Performance

IRF630 Circuit Diagram

IRF630 Specification

IRF630 VS IRF640

IRF630 Manufacturer

IRF630 Datasheet

Using Warnings

IRF630 FAQ

 

IRF630 Features

  • Dynamic dv/dt Rating
  • Repetitive Avalanche Rated
  • Fast switching capability
  • Ease of Paralleling
  • Simple Drive Requirements
  • RoHS Compliance and Halogen free

 

 

IRF630 Pinout

The following figure is the diagram of IRF630 pinout.

 

IRF630 Pinout

IRF630 Pinout

 

IRF630 Applications

  • Battery Chargers
  • Solar power supply applications
  • Applications that require fast switching
  • Motor Drivers
  • UPS
  • Telecommunication Applications
  • Driving load at the output of Arduino and other platforms
  • High voltage switching under 200V

 

Where We Can Use it & How to Use

IRF630 can be used in applications in which high switching speed is required. Other than that it can also be used in any general application that falls under its specifications. It is also suitable for audio amplification and can be used to build high-power audio amplifiers. The procedure of using this transistor in circuit is the same as you use any other MOSFET.

 

IRF630 Equivalents

BUK454-200A, BUK454-200B, 2SK1957, 2SK2212, BUK444-200A, BUK444-200B, IRFI630G, IRFS630, IRFS631, RFP2N18, YTA630, 2SK1957.

 

IRF630 CAD Models

Followings are IRF630 Symbol, Footprint, and 3D Model.

 

IRF630 Symbol

IRF630 Symbol

 

IRF630 Footprint

IRF630 Footprint

 

IRF630 3D Model

IRF630 3D Model

 

How to Get Long Life Performance

To get long term performance with this transistor it is suggested to always use it atleast 20% below from its maximum ratings. The max drain to source voltage is 200V therefore do not drive load of more than 160V. The max continuous drain current is 9A therefore do not drive load of more than 6.2A and always use a suitable heatsink with the transistor. Do not store and operate the transistor in temperature below -55 degree centigrade and above +150 degree centigrade.

 

IRF630 Circuit Diagram

Following are the test circuit diagrams of IRF630

 

Test circuit for resistive load switching times

Test circuit for resistive load switching times

 

Test circuit for gate charge behavior

Test circuit for gate charge behavior

 

Test circuit for inductive load switching and diode recovery times

Test circuit for inductive load switching and diode recovery times

 

Unclamped inductive load test circuit

Unclamped inductive load test circuit

 

 

Unclamped inductive waveform

Unclamped inductive waveform

 

Switching time waveform

Switching time waveform

 

IRF630 Specification

Product Attribute Attribute Value
Manufacturer: STMicroelectronics
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 9 A
Rds On - Drain-Source Resistance: 400 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 31 nC
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 75 W
Channel Mode: Enhancement
Configuration: Single
Height: 9.15 mm
Length: 10.4 mm
Transistor Type: 1 N-Channel
Type: MOSFET
Width: 4.6 mm

 

IRF630 VS IRF640

Product Attribute IRF630 IRF640
Product Category: MOSFET MOSFET
Mounting Style: Through Hole THT
Package / Case: TO-220-3 TO-220
Transistor Polarity: N-Channel N-Channel
Number of Channels: 1 Channel  
Vds - Drain-Source Breakdown Voltage: 200 V  
Id - Continuous Drain Current: 9 A 18.0 A
Rds On - Drain-Source Resistance: 400 mOhms  
Vgs - Gate-Source Voltage: - 20 V, + 20 V 20.0 V,200.0 V
Vgs th - Gate-Source Threshold Voltage: 2 V  
Qg - Gate Charge: 31 nC 44.7 nC
Minimum Operating Temperature: - 65 C  
Maximum Operating Temperature: + 150 C  
Pd - Power Dissipation: 75 W 150.0 W
Channel Mode: Enhancement  
Configuration: Single  
Height: 9.15 mm  
Length: 10.4 mm  
Transistor Type: 1 N-Channel  
Type: MOSFET  
Width: 4.6 mm  

 

IRF630 Manufacturer

ST is a global semiconductor leader delivering intelligent and energy-efficient products and solutions that power the electronics at the heart of everyday life. ST’s products are found everywhere today, and together with our customers, we are enabling smarter driving and smarter factories, cities and homes, along with the next generation of mobile and Internet of Things devices. By getting more from technology to get more from life, ST stands for life.augmented.

 

IRF630 Datasheet

You can download this datasheet for IRF630–Datasheet from the link given below:

IRF630 Datasheet

 

Using Warnings

Note: Please check their parameters and pin configuration before replacing them in your circuit.

 

IRF630 FAQ

What is IRF630?

The IRF630 from STMicroelectronics is a through hole, 200V N channel mesh overlay II power MOSFET in TO-220 package.

 

What are power MOSFETs used for?

Power MOSFETs (Metal-Oxide Semiconductor Field Effect Transistors) are three-terminal silicon devices that function by applying a signal to the gate that controls current conduction between source and drain.

 

How does MOSFET work?

It works by varying the width of a channel along which charge carriers flow (electrons or holes). The charge carriers enter the channel at source and exit via the drain. The width of the channel is controlled by the voltage on an electrode is called gate which is located between source and drain.

 

Which is STMicroelectronics power MOSFET for DC converters?

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.

 

Which is the channel of the irf630 MOSFET?

IRF630IRF630FPN-channel.

 

What does the IRF630 feature?

Gate charge minimized

 

What can IRF630 be used in?

Any general application that falls under its specifications

 

What is IRF630 suitable for?

Audio amplification

 

What type of transistor does IRF630 use?

MOSFET

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