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BSS123 Mosfet: Pinout,Circuit,Datasheet,Application

  • Contents

The BSS123 is an SMD Package (SOT23) Logic Level N-Channel MOSFET with drain current of 170mA and Drain Source Voltage of 100V.

Catalog

BSS123 Description

BSS123 Pinout

Pin Configuration

CAD Model

BSS123 Circuit

BSS123 Specifications

BSS123 Applications

Alternative for BSS123

2D-Model

BSS123 vs BSS123LT3

BSS123 Datasheet

Manufacturer

FAQ

 

BSS123 Description

The BSS123 is a compact Logic Level N-Channel Mosfet. The mosfet has very low threshold voltage of 01.7V and hence can be used with any low voltage application circuits and for level shifting applications. Adding to this the Mosfet also has low on-state resistance and low input capacitance which makes it efficient in switching circuits since it requires only less gate current even when switching at high speeds.

 

The BSS123 is slightly pricy for its specification, so if you are looking for a cheap alternative do check 2N7002. However you have to compensate slightly with the on-state resistance and threshold voltage of the Mosfet. This mosfet comes in a SMD package hence can be used for compact applications. One considerable disadvantage of the mosfet is its low drain current; it can provide a continuous current of 170mA and peaks currents upto 1A at maximum threshold voltage. Anything more than that will damage the mosfet.  You can also check the BSS1238 which has drain current of 200mA.

 

 

BSS123 Pinout

 

Pinout-bss123

Pinout of bss123

 

 

Pin Configuration

Pin Number Pin Name Description
1 Source Current flows out through Source
2 Gate Controls the biasing of the MOSFET
3 Drain Current flows in through Drain

 

 

CAD Model

 

CAD-Model

 

BSS123 CAD Model

 

 

 

 

BSS123 Circuit

BSS123 Led circuit

 

 

BSS123 Specifications

Product Attribute Attribute Value
Manufacturer: onsemi
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 170 mA
Rds On - Drain-Source Resistance: 6 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
Qg - Gate Charge: 2.5 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 300 mW
Channel Mode: Enhancement
Packaging: Cut Tape
Packaging: MouseReel
Packaging: Reel
Configuration: Single
Height: 1.2 mm
Length: 2.9 mm
Product: MOSFET Small Signal
Series: BSS123
Transistor Type: 1 N-Channel
Type: FET
Width: 1.3 mm
Brand: onsemi / Fairchild
Forward Transconductance - Min: 0.8 S
Fall Time: 9 ns
Product Type: MOSFET
Rise Time: 9 ns
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 17 ns
Typical Turn-On Delay Time: 1.7 ns
Part # Aliases: BSS123_NL
Unit Weight: 0.000282 oz

 

 

 

BSS123 Applications

  • Low current and Low Voltage switching applications
  • Logic Level Shifters
  • DC-DC converts
  • eMobility applications
  • Application where low on-state resistance is required.
  • Power management applications

 

Alternative for BSS123

  • BSS138, NTR4003, 2N7002, FDC666, FDC558, BS170, 2N7000
  • Equivalent P-Channel for BSS123: BSS84, FDN358P
  • Other N-Channel Mosfet’s: BS170N, IRF3205, 2N7000, IRF1010E, IRF540N

 

 

2D-Model

The Mosfet is available in SOT23, the dimensions of the same is shown below.

 

dimensions

2D-Model

 

 

BSS123 vs BSS123LT3

Source Content uid BSS123 BSS123LT3
Pbfree Code Yes  
Part Life Cycle Code Active Transferred
Ihs Manufacturer ON SEMICONDUCTOR MOTOROLA INC
Package Description SOT-23, 3 PIN SMALL OUTLINE, R-PDSO-G3
Manufacturer Package Code 318-08  
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95 8541.21.00.95
Factory Lead Time 1 Week  
Date Of Intro 35309  
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 0.17 A 0.17 A
Drain-source On Resistance-Max 12 6
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3  
Moisture Sensitivity Level 1  
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 C 150 C
Operating Temperature-Min -55 C  
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED  
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 0.36 W 0.225 W
Power Dissipation-Max (Abs) 0.36 W  
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn)  
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED  
Transistor Application SWITCHING  
Transistor Element Material SILICON SILICON
Base Number Matches 10 1
JEDEC-95 Code   TO-236AB

 

BSS123 Datasheet

BSS123 Datasheet

 

Manufacturer

onsemi is helping build a better future by driving disruptive innovations. Focusing on automotive and industrial end-markets, this company is accelerating change in megatrends such as vehicle electrification and safety, industrial automation, sustainable energy grids, and 5G and cloud infrastructure. With their innovative product portfolio, onsemi creates intelligent power and sensing technologies that solve complex challenges, and strives for a cleaner, safer, and smarter world. onsemi operates a responsive, reliable supply chain and quality programs, and robust ESG programs, and has a global network of manufacturing facilities, sales and marketing offices, and engineering centers in its key markets.

 

FAQ

  • What is the Mounting of BSS123?

SMD

 

  • What is the Technology of BSS123?

TRENCH POWER MV

 

  • What is the Case of BSS123?

SOT23

 

  • What is the Kind of package of BSS123?

reel, tape

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