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BFU590GX RF Bipolar Transistors: Features, Datasheet, Applications

  • Contents

Catalog

BFU590GX Overview

BFU590GX Features and Benefits

BFU590GX Pinning Information

BFU590GX Applications

BFU590GX Package Outline

BFU590GX Specification

BFU590GX Manufacturer

BFU590GX Datasheet

BFU590GX Overview

NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

This blog will introduce BFU590GX systematically from its features, pinout to its specifications, applications, also including BFU590GX datasheet and so much more.

BFU590GX Features and Benefits

  • Medium power, high linearity, high breakdown voltage RF transistor
  • AEC-Q101 qualified n
  • Maximum stable gain 13 dB at 900 MHz n
  • PL(1dB) 21.5 dBm at 900 MHz n
  • 5 GHz fT silicon technology

BFU590GX Pinning Information

 bfu590gx-pinning-information

BFU590GX Pinning Information

BFU590GX Applications

  • Automotive applications n
  • Broadband amplifiers n
  • Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz)
  • Large signal amplifiers for ISM applications

BFU590GX Package Outline

The following diagram shows the BFU590GX package.

bfu590gx-package-outline

BFU590GX Package outline

BFU590GX Specification

Product Attribute Attribute Value
Manufacturer: NXP
Product Category: RF Bipolar Transistors
Transistor Type: Bipolar Wideband
Technology: Si
Transistor Polarity: NPN
Operating Frequency: 900 MHz
DC Collector/Base Gain hfe Min: 60
Collector- Emitter Voltage VCEO Max: 16 V
Emitter- Base Voltage VEBO: 2 V
Continuous Collector Current: 80 mA
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Mounting Style: SMD/SMT
Package / Case: SOT-223-4
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: NXP Semiconductors
Collector- Base Voltage VCBO: 24 V
DC Current Gain hFE Max: 130
Gain Bandwidth Product fT: 8.5 GHz
Maximum DC Collector Current: 300 mA
Operating Temperature Range: - 40 C to + 150 C
Pd - Power Dissipation: 2000 mW
Product Type: RF Bipolar Transistors
Factory Pack Quantity: 1000
Subcategory: Transistors
Type: Wideband RF Transistor
Part # Aliases: 9.34068E+11
Unit Weight: 0.003447 oz

BFU590GX Manufacturer

NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is driving innovation in the secure connected vehicle, end-to-end security and privacy and smart connected solutions markets.

BFU590GX Datasheet

You can download BFU590GX datasheet from the link given below:

BFU590GX Datasheet

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