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PC28F512P30BFA NOR Flash Memory: Datasheet, Pinout, Features [Video&FAQ]

  • Contents

Catalog

PC28F512P30BFA Description

PC28F512P30BFA Related Video Instruction

PC28F512P30BFA CAD Models

PC28F512P30BFA Pinout

PC28F512P30BFA Block Diagram

PC28F512P30BFA Features

PC28F512P30BFA Datasheet

PC28F512P30BFA Specifications

PC28F512P30BFA Manufacturer

Using Warning

PC28F512P30BFA FAQ

PC28F512P30BFA Description

The Micron Parallel NOR Flash memory is the latest generation of Flash memory devices. Benefits include more density in less space, high-speed interface device, and support for code and data storage. Features include high-performance synchronous-burst read mode, fast asynchronous access times, low power, flexible security options, and three industry-standard package choices. The product family is manufactured using Micron 65nm process technology.

 

The NOR Flash device provides high performance at low voltage on a 16-bit data bus.Individually erasable memory blocks are sized for optimum code and data storage.Upon initial power up or return from reset, the device defaults to asynchronous pagemode read. Configuring the read configuration register enables synchronous burstmode reads. In synchronous burst mode, output data is synchronized with a user-supplied clock signal. A WAIT signal provides easy CPU-to-flash memory synchronization.In addition to the enhanced architecture and interface, the device incorporates technology that enables fast factory PROGRAM and ERASE operations. Designed for low-voltage systems, the devIce supports READ operations with VCC at the low voltages, and ERASE and PROGRAM operations with VPP at the low voltages or VPPH. Buffered enhanced factory programming (BEFP) provides the fastest Flash array programming performance with VPP at VPPH, which increases factory throughput. With VPP at low voltages, VCC and VPP can be tied together for a simple, ultra low-power design. In addition to voltage flexibility, a dedicated VPP connection provides complete data protection when VPP≤VPPLK.

 

command user interface is the interface between the system processor and all internal operations of the device. The device automatically executes the algorithms and timings necessary for block erase and program. A status register indicates ERASE or PROGRAM completion and any errors that may have occurred.

 

An industry-standard command sequence invokes program and erase automation.Each ERASE operation erases one block. The erase suspend feature enables system software to pause an ERASE cycle to read or program data in another block. Program suspend enables system software to pause programming to read other locations. Data is programmed in word increments (16 bits).

 

The protection register enables unique device identification that can be used to increase system security. The individual block lock feature provides zero-latency block locking and unlocking. The device includes enhanced protection via password access;this new feature supports write and/or read access protection of user-defined blocks. In addition, the device also provides the full-device OTP security feature.

 

Video:NOR vs. NAND Flash Memory

PC28F512P30BFA Video Description:

NOR and NAND flash memory are the two primary kinds of non-volatile storage technologies. NOR flash has faster read times, but NAND has faster write times, which impacts how they’re used. For instance, NOR is used in low-capacity, but high reliability applications, like for scientific or medical devices. NAND is used in high memory applications that don’t require fast read times, like digital cameras. Some devices, like smartphones and tablets, use both. 

 

PC28F512P30BFA Pinout

PC28F512P30BFA-Pinout

Figure: Pinout

 

PC28F512P30BFA Block Diagram

PC28F512P30BFA-Block-Diagram

Figure: Block Diagram

 

PC28F512P30BFA Features

  • High performance
  • Easy  BGA package features

      – 100ns initial access for 512Mb, 1Gb Easy BGA

      – 105ns initial access for 2Gb Easy BGA

      – 25ns 16-word asynchronous page read mode

      – 52 MHz (Easy BGA) with zero WAIT states and 17ns clock-to-data output synchronous burst read mode

      – 4-, 8-, 16-, and continuous word options for burst mode

  • TSOP package features

      – 110ns initial access for 512Mb, 1Gb TSOP

  • Both Easy BGA and TSOP package features

      – Buffered enhanced factory programming (BEFP) at 2 MB/s (TYP) using a 512-word buffer

      – 1.8V buffered programming at 1.46 MB/s (TYP) using a 512-word buffer

  • Architecture

      – MLC: highest density at lowest cost

      – Symmetrically blocked architecture (512Mb, 1Gb, 2Gb)

      – Asymmetrically blocked architecture (512Mb,1Gb); four 32KB parameter blocks: top or bottom configuration

      – 128KB main blocks

      – Blank check to verify an erased block

  • Voltage and power

      – VCC (core) voltage: 1.7–2.0V

      – VCCQ (I/O) voltage: 1.7–3.6V

      – Standby current: 70µA (TYP) for 512Mb; 75µA (TYP) for 1Gb

      – 52 MHz continuous synchronous read current: 21mA (TYP), 24mA (MAX)

  • 16-bit wide data bus
  • Security

      – One-time programmable register: 64 OTP bits,programmed with unique information from Micron; 2112 OTP bits available for customer programming

      – Absolute write protection: VPP = VSS

      – Power-transition erase/program lockout

      – Individual zero-latency block locking

      – Individual block lock-down

      – Password access

  • Software

      – 25μs (TYP) program suspend

      – 25μs (TYP) erase suspend

      – Flash Data Integrator optimized

      – Basic command set and extended function interface (EFI) command set compatible

      – Common flash interface

  • Density and packaging

      – 56-lead TSOP package (512Mb, 1Gb)

      – 64-ball Easy BGA package (512Mb, 1Gb, 2Gb)

  • Quality and reliability

      – JESD47 compliant

      – Operating temperature: –40°C to +85°C

      – Minimum 100,000 ERASE cycles per block

      – 65nm process technology

 

PC28F512P30BFA Datasheet

You can download the datasheet from the link given below.

PC28F512P30BFA-Datasheet

 

PC28F512P30BFA Specifications

Manufacturer Part Number: PC28F512P30BFA
Part Life Cycle Code: Obsolete
Part Package Code: BGA
Package Description: TBGA, BGA64,8X8,20
Pin Count: 64
Reach Compliance Code: compliant
ECCN Code: EAR99
HTS Code: 8542.32.00.51
Manufacturer: Micron Technology Inc
Risk Rank: 8.25
Access Time-Max: 100 ns
Additional Feature: BOTTOM BOOT
Boot Block: BOTTOM
JESD-30 Code: R-PBGA-B64
JESD-609 Code: e1
Length: 10 mm
Memory Density: 536870912 bit
Memory IC Type: FLASH
Memory Width: 16
Number of Functions: 1
Number of Sectors/Size: 4511
Number of Terminals: 64
Number of Words: 33554432 words
Number of Words Code: 32000000
Operating Mode: SYNCHRONOUS
Operating Temperature-Max: 85 °C
Operating Temperature-Min: -40 °C
Organization: 32MX16
Package Body Material: PLASTIC/EPOXY
Package Code: TBGA
Package Style: GRID ARRAY, THIN PROFILE
Page Size: 16 words
Parallel/Serial: PARALLEL
Peak Reflow Temperature (Cel): 260
Power Supplies: 1.8,1.8/3.3 V
Programming Voltage: 3 V
Seated Height-Max: 1.2 mm
Sector Size: 16K,64K
Standby Current-Max: 0.000225 A
Subcategory: Flash Memories
Supply Current-Max: 0.031 mA
Supply Voltage-Max (Vsup): 2 V
Supply Voltage-Min (Vsup): 1.7 V
Supply Voltage-Nom (Vsup): 1.8 V
Type: NOR TYPE
Width: 8 mm

 

PC28F512P30BFA Manufacturer

Micron is a world leader in innovative memory solutions that transform how the world uses information. For over 40 years, this company has been instrumental to the world’s most significant technology advancements, delivering optimal memory and storage systems for a broad range of applications.

 

Using Warning

Note: Please check their parameters and pin configuration before replacing them in your circuit.

 

PC28F512P30BFA FAQ

What is a NOR flash memory?

NOR flash memory is one of two types of non-volatile storage technologies.Non-volatile memory doesn't require power to retain data. NOR and NAND use different logic gates -- the fundamental building block of digital circuits -- in each memory cell to map data.

 

What is the difference between NAND and NOR?

NOR and NAND flash memory are different by their architecture and purpose. NOR memory is used for storing code and execution. Allows quick random access to any location in memory array. NAND memory is used for data storage 

 

Does NOR flash need wear leveling?

Preferably, the buffer is stored in the flash as a reset will erase all the information required about the pointer to the last page will be lost. The buffer information that has been stored also needs to be wear levelled in order to increase the life expectancy of the overall NOR storage media.

PC28F512P30BFA Documents & Media

Download datasheets and manufacturer documentation for Micron Technology Inc. PC28F512P30BFA.

PC28F512P30BFA PCB Symbol, Footprint & 3D Model

Micron Technology Inc. PC28F512P30BFA

Micron Technology Inc.

IC FLASH 512M PARALLEL 64EASYBGA

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