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MMBT3904LT1G Bipolar (BJT) Transistor: CAD Models, Datasheet, Features [Video&FAQ]

  • Contents

Catalog

Product Overview

MMBT3904LT1G CAD Models

MMBT3904LT1G Circuits

MMBT3904LT1G Marking Diagram

MMBT3904LT1G Features

MMBT3904LT1G Datasheet

MMBT3904LT1G Specifications

MMBT3904LT1G Manufacturer

Using Warning

MMBT3904LT1G FAQ

 

Product Overview

The MMBT3904LT1G is a NPN silicon Bipolar Transistor, designed for use in linear, lower power surface mount and switching applications.

 

 

MMBT3904LT1G CAD Models

MMBT3904LT1G PCB Symbol

Figure: MMBT3904LT1G PCB Symbol

 

 

MMBT3904LT1G Footprint

Figure: MMBT3904LT1G Footprint

 

 

MMBT3904LT1G 3D Models

Figure: MMBT3904LT1G 3D Models

 

MMBT3904LT1G Circuits

MMBT3904LT1G Delay and Rise Time Equivalent Test Circuit

Figure: MMBT3904LT1G Delay and Rise Time Equivalent Test Circuit

 

 

MMBT3904LT1G Storage and Fall Time Equivalent Test Circuit

Figure: MMBT3904LT1G Storage and Fall Time Equivalent Test Circuit

 

MMBT3904LT1G Marking Diagram

MMBT3904LT1G Marking Diagram

Figure: MMBT3904LT1G Marking Diagram

 

MMBT3904LT1G Features

  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

 

MMBT3904LT1G Datasheet

You can download the datasheet from the link given below:

Datasheet

MMBT3904LT1G Specifications

Type Description
Category Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Single
Mfr onsemi
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
Power - Max 300 mW
Frequency - Transition 300MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number MMBT3904

 

 

MMBT3904LT1G Manufacturer

Onsemi is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. onsemi operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

Using Warning

Note: Please check their parameters and pin configuration before replacing them in your circuit.

 

MMBT3904LT1G FAQ

What is bipolar in BJT?

Simply put, a BJT is a three-terminal semiconductor device. The name "bipolar" comes from the fact that this type of transistor contains two types of semiconductor material—one positive type (p-type) and one negative type (n-type)—through which a current flows. Bipolar junction transistors usually contain silicon.

 

Is BJT and bipolar transistor same?

A Bipolar Junction Transistor (also known as a BJT or BJT Transistor) is a three-terminal semiconductor device consisting of two p-n junctions which are able to amplify or magnify a signal.

 

Why BJT transistor is bipolar?

Bipolar transistors are a type of transistor composed of pn junctions, which are also called bipolar junction transistors (BJTs). Whereas a field-effect transistor is a unipolar device, a bipolar transistor is so named because its operation involves two kinds of charge carriers, holes and electrons.

 

What is a transistor bipolar junction transistor?

A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. Bipolar transistors are still used for amplification of signals, switching, and in digital circuits.

 

How does a bipolar transistor work?

Bipolar transistors are current-controlled and operated devices, meaning that a much smaller base current causes a larger current to flow from emitter to collector. Whereas transformers can amplify either current or voltage, transistors can amplify both.

 

What are BJT transistors used for?

A bipolar junction transistor (BJT) can be used in many circuit configurations such as an amplifier, oscillator, filter, rectifier or just used as an on-off switch.

 

Why it is called bipolar transistor?

Device is often called the bipolar junction transistor because its operation requires that the negatively charged electrons and their positively charged counterparts (the holes corresponding to an absence of electrons in the crystal lattice) coexist briefly in the presence of one another.

 

Why BJT is bipolar and mosfet is unipolar?

BJT is called bipolar because the current in a BJT flows due to both electron and hole carriers, whereas the current in a Field Effect Transistor (FET) flows due to either electron carriers for N-type FET or hole carriers for P-type FET, hence they're called unipolar transistors.

 

What are the two types of bipolar junction transistors?

A bipolar transistor (bipolar junction transistor: BJT) consists of three semiconductor regions forming two junctions. There are two types of structure: npn and pnp.

 

What are the characteristics of Bipolar Junction Transistor?

For the BJT, there are three regions of operation; Active region: In this region, the base emitter junction is forward biased and the base-collector junction is reverse biased. This region is the normal transistor operation mode for amplification, and is characterized by the transistor current gain value, beta.

 

MMBT3904LT1G PCB Symbol, Footprint & 3D Model

FUXINSEMI MMBT3904LT1G

FUXINSEMI

40V 200mW 300@10mA,1V 200mA NPN SOT-23 Bipolar (BJT) ROHS

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