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IRLML6401TRPBF Power MOSFET:CAD Models, Datasheet, Features [FAQ]

  • Contents

Catalog

Description

CAD Models

Absolute Maximum Ratings

Source-Drain Ratings and Characteristics

Features

Datasheet

Specifications

Manufacturer

Using Warning

FAQ

Description

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

 

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.

 

CAD Models

IRLML6401TRPBF-PCB-Symbol

 

Figure: PCB Symbol

 

IRLML6401TRPBF-Footprint

 

Figure: Footprint

 

IRLML6401TRPBF-3D-Model

 

Figure: 3D Model

 

Absolute Maximum Ratings

  Parameter  Max. Units
VDS Drain- Source Voltage -12 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.3 A
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -3.4
IDM Pulsed Drain Current   -34
PD @TA = 25°C Power Dissipation 1.3 W
PD @TA = 70°C Power Dissipation 0.8
  Linear Derating Factor 0.01 W/°C
EAS Single Pulse Avalanche Energy  33 mJ
VGS Gate-to-Source Voltage  ± 8.0 V
TJ, TSTG Junction and Storage Temperature Range  -55 to + 150 ℃ 

 

Source-Drain Ratings and Characteristics

   Parameter Min. Typ.  Max.  Units Conditions
IS Continuous Source Current (Body Diode) —— —— -1.3 A MOSFET symbol showing the integral reverse p-n junction diode.
ISM Pulsed Source Current (Body Diode) —— —— -34
VSD Diode Forward Voltage —— —— -1.2  V TJ = 25°C, IS = -1.3A, VGS = 0V
trr Reverse Recovery Time —— 22 33 ns  TJ = 25°C, IF = -1.3A di/dt = -100A/μs
Qrr Reverse Recovery Charge —— 8 12 nC

 

Features

  • Ultra Low On-Resistance
  • P-Channel MOSFET
  • SOT-23 Footprint
  • Low Profile (<1.1mm)
  • Available in Tape and Reel
  • Fast Switching
  • 1.8V Gate Rated
  • Lead-Free
  • RoHS Compliant, Halogen-Free

 

Datasheet

You can download the datasheet from the link given below:

IRLML6401TRPBF-Datasheet

 

Specifications

Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 12 V
Id - Continuous Drain Current: 4.3 A
Rds On - Drain-Source Resistance: 50 mOhms
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 15 nC
Minimum Operating Temperature: - 55 ℃
Maximum Operating Temperature: + 150 ℃
Pd - Power Dissipation: 1.3 W
Channel Mode: Enhancement
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: Infineon / IR
Configuration: Single
Height: 1.1 mm
Length: 2.9 mm
Product Type: MOSFET
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Width: 1.3 mm
Part # Aliases: IRLML6401TRPBF SP001577044
Unit Weight: 0.000282 oz

 

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer founded in 1999, when the semiconductor operations of the former parent company Siemens AG were spun off. Infineon has about 46,665 employees and is one of the ten largest semiconductor manufacturers worldwide. It is market leader in automotive and power semiconductors.

 

Using Warning

Note: Please check their parameters and pin configuration before replacing them in your circuit.

 

FAQ

What is a MOSFET used for?

Power MOSFETs are commonly used in automotive electronics, particularly as switching devices in electronic control units, and as power converters in modern electric vehicles. The insulated-gate bipolar transistor (IGBT), a hybrid MOS-bipolar transistor, is also used for a wide variety of applications.

 

What is MOSFET and how it works?

In general, the MOSFET works as a switch, the MOSFET controls the voltage and current flow between the source and drain. The working of the MOSFET depends on the MOS capacitor, which is the semiconductor surface below the oxide layers between the source and drain terminal.

 

How MOSFET acts as a switch?

The two MOSFETs are configured to produce a bi-directional switch from a dual supply with the motor connected between the common drain connection and ground reference. When the input is LOW the P-channel MOSFET is switched-ON as its gate-source junction is negatively biased so the motor rotates in one direction.

 

IRLML6401TRPBF Documents & Media

Download datasheets and manufacturer documentation for International Rectifier IRLML6401TRPBF.

IRLML6401TRPBF PCB Symbol, Footprint & 3D Model

International Rectifier IRLML6401TRPBF

International Rectifier

Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3

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