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IRFB4227PBF Power MOSFET: CAD Models, Datasheet, Features [Video&FAQ]

  • Contents

Catalog

Product Overview

IRFB4227PBF Related Video Introduction

IRFB4227PBF CAD Models

IRFB4227PBF Features

IRFB4227PBF Key Parameters

IRFB4227PBF Datasheet

IRFB4227PBF Specifications

IRFB4227PBF Manufacturer

Using Warning

IRFB4227PBF FAQ

 

Product Overview

This HEXFET® Power MOSFET is specifically designed for Sustain¡ Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

 

Video Description: How to measure  “drain-source on resistance” in order to identify a fake MOSFET Transistor. Do this test for your MOSFET and compare it to the datasheet.

 

IRFB4227PBF CAD Models

IRFB4227PBF PCB Symbol

Figure: IRFB4227PBF PCB Symbol

 

 

 IRFB4227PBF Footprint

Figure: IRFB4227PBF Footprint

 

 

 IRFB4227PBF 3D Models

Figure: IRFB4227PBF 3D Models

 

IRFB4227PBF Features

  • Advanced Process Technology
  • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
  • Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
  • Low QG for Fast Response
  • High Repetitive Peak Current Capability for Reliable Operation
  • Short Fall & Rise Times for Fast Switching
  • 175°C Operating Junction Temperature for Improved Ruggedness
  • Repetitive Avalanche Capability for Robustness and Reliability
  • Class-D Audio Amplifier 300W-500W (Half-bridge)

 

IRFB4227PBF Key Parameters

Key Parameters

VDS max

200

V

VDS (Avalanche) typ.

240

V

RDS(ON) typ. @ 10V

19.7

IRP max @ TC= 100°C

130

A

TJ max

175

°C

 

IRFB4227PBF Datasheet

You can download the datasheet from the link given below:

IRFB4227PBF Datasheet

 

IRFB4227PBF Specifications

Type Description
Category Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 25 V
FET Feature -
Power Dissipation (Max) 330W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number IRFB4227

 

IRFB4227PBF Manufacturer

Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.

 

Using Warning

Note: Please check their parameters and pin configuration before replacing them in your circuit.

 

IRFB4227PBF FAQ

What is meant by power MOSFET?

A type of metal oxide semiconductor field effect transistor (MOSFET) used to switch large amounts of current. Power MOSFETs use a vertical structure with source and drain terminals at opposite sides of the chip. The vertical orientation eliminates crowding at the gate and offers larger channel widths.

 

What are power MOSFET used for?

Power MOSFETs are widely used in transportation technology, which include a wide range of vehicles. In the automotive industry, power MOSFETs are widely used in automotive electronics. Power MOSFETs (including DMOS, LDMOS and VMOS) are commonly used for a wide range of other applications.

 

How does power MOSFET work?

Power MOSFETs (Metal-Oxide Semiconductor Field Effect Transistors) are three-terminal silicon devices that function by applying a signal to the gate that controls current conduction between source and drain.

 

What are the important power MOSFET characteristics?

Because power MOSFETs are primarily used as power switches, they are expected to have low conduction and switching losses. For power management applications, conduction losses, ruggedness and avalanche capability are important features.

 

Why are MOSFETs used in low power applications?

Where the Power MOSFETs are used, it is their low ON resistance that is particularly attractive. This reduces power dissipation which reduces cost and size less metalwork and cooling is required. Also the low ON resistance means that efficiency levels can be maintained at a higher level.

 

IRFB4227PBF Documents & Media

Download datasheets and manufacturer documentation for International Rectifier IRFB4227PBF.

IRFB4227PBF PCB Symbol, Footprint & 3D Model

International Rectifier IRFB4227PBF

International Rectifier

Power Field-Effect Transistor, 65A I(D), 200V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

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