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IRF520: HEXFET Power MOSFET Datasheet PDF Download

  • Contents

Catalog

Features

Description

Absolute Maximum Ratings

Thermal Resistance

Electrical Characteristics

Source-Drain Ratings and Characteristics

Circuit Diagram & Characteristics Curves

Peak Diode Recovery dv/dt Test Circuit

TO-220AB Package Outline

TO-220AB Part Marking Information

IRF520N Datasheet Download

IRF520N FAQ

Features

  • Advanced Process Technology
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Lead-Free

 

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

 

Absolute Maximum Ratings

 

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

9.7

 

A

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

6.8

IDM

Pulsed Drain Current ©

38

PD @TC = 25°C

Power Dissipation

48

W

 

Linear Derating Factor

0.32

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy©

91

mJ

IAR

Avalanche Current©

5.7

A

EAR

Repetitive Avalanche Energy©

4.8

mJ

dv/dt

Peak Diode Recovery dv/dt ©

5.0

V/ns

TJ

TSTG

Operating Junction and

Storage Temperature Range

-55 to + 175

 

°C

 

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

 

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

 

 

Thermal Resistance

 

Parameter

Typ.

Max.

Units

RqJC

Junction-to-Case

–––

3.1

 

°C/W

RqCS

Case-to-Sink, Flat, Greased Surface

0.50

–––

RqJA

Junction-to-Ambient

–––

62

 

Electrical Characteristics

@ TJ = 25°C (unless otherwise specified)

 

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

100

–––

–––

V

VGS = 0V, ID = 250µA

DV(BR)DSS/DTJ

Breakdown Voltage Temp. Coefficient

–––

0.11

–––

V/°C

Reference to 25°C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance

–––

–––

0.20

W

VGS = 10V, ID = 5.7A  

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance 

2.7

–––

–––

S

VDS = 50V, ID = 5.7A

IDSS

Drain-to-Source Leakage Current

–––

–––

25

µA

VDS = 100V, VGS = 0V

–––

–––

250

VDS = 80V, VGS = 0V, TJ = 150°C

IGSS

Gate-to-Source Forward Leakage

–––

–––

100

nA

VGS = 20V

Gate-to-Source Reverse Leakage

–––

–––

-100

VGS = -20V

Qg

Total Gate Charge

–––

–––

25

 

nC

ID = 5.7A VDS = 80V

VGS = 10V, See Fig. 6 and 13  

Qgs

Gate-to-Source Charge

–––

–––

4.8

Qgd

Gate-to-Drain ("Miller") Charge

–––

–––

11

td(on)

Turn-On Delay Time

–––

4.5

–––

 

ns

VDD = 50V ID = 5.7A RG = 22W

RD = 8.6W, See Fig. 10  

tr

Rise Time

–––

23

–––

td(off)

Turn-Off Delay Time

–––

32

–––

tf

Fall Time

–––

23

–––

LD

Internal Drain Inductance

–––

4.5

–––

 

nH

Between lead, D

6mm (0.25in.)

from package G

and center of die contact S

LS

Internal Source Inductance

–––

7.5

–––

Ciss

Input Capacitance

–––

330

–––

 

pF

VGS = 0V VDS = 25V

ƒ = 1.0MHz, See Fig. 5

Coss

Output Capacitance

–––

92

–––

Crss

Reverse Transfer Capacitance

–––

54

–––

 

Source-Drain Ratings and Characteristics

 

Parameter

Min.

Typ.

Max.

Units

Conditions

IS

Continuous Source Current

(Body Diode)

–––

–––

9.7

 

A

MOSFET symbol D

showing the

integral reverse G

p-n junction diode. S

ISM

Pulsed Source Current

(Body Diode) ©

–––

–––

38

VSD

Diode Forward Voltage

–––

–––

1.3

V

TJ = 25°C, IS = 5.7A, VGS = 0V  

trr

Reverse Recovery Time

–––

99

150

ns

TJ = 25°C, IF = 5.7A

di/dt = 100A/µs  

Qrr

Reverse RecoveryCharge

–––

390

580

nC

Notes:

① Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )

②VDD = 25V, starting TJ = 25°C, L = 4.7mH RG = 25W, IAS = 5.7A. (See Figure 12)

③ISD £ 5.7A, di/dt £ 240A/µs, VDD £ V(BR)DSS, TJ £ 175°C Pulse width £ 300µs; duty cycle £ 2%.

 

Circuit Diagram & Characteristics Curves

Typical-Output-Characteristics-01

 

Characteristic-Curves-01

 

Characteristic-Curves-02

 

Characteristic-Curves-03

 

Characteristic-Curves-04

 

Characteristic-Curves-05

 

Characteristic-Curves-06

 

Circuit-Diagram-01

 

Circuit-Diagram-02

 

Peak Diode Recovery dv/dt Test Circuit

Peak-Diode-Recovery-dv-dt-Test-Circuit-01

 

Peak-Diode-Recovery-dv-dt-Test-Circuit-02

 

TO-220AB Package Outline

TO-220AB-Package-Outline

 

TO-220AB Part Marking Information

TO-220AB-Part-Marking-Information

 

IRF520N Datasheet Download

You can download the datasheet from the link given below.

IRF520N-Datasheet

 

IRF520N FAQ

What is a Hexfet power MOSFET?

The HEXFET®is fundamentally different: it is a voltage-controlled power MOSFET device. A voltage must be applied between the gate and source terminals to produce a flow of current in the drain. The gate is isolated electrically from the source by a layer of silicon dioxide.

 

What is the difference between MOSFET and power MOSFET?

Power MOSFET is a type of MOSFET which is specially meant to handle high levels of power. These exhibit high switching speed and can work much better in comparison with other normal MOSFETs in the case of low voltage levels. However its operating principle is similar to that of any other general MOSFET.

 

What does a power Mosfet do?

Power MOSFETs (Metal-Oxide Semiconductor Field Effect Transistors) are three-terminal silicon devices that function by applying a signal to the gate that controls current conduction between source and drain.

 

What are the important power Mosfet characteristics?

Because power MOSFETs are primarily used as power switches, they are expected to have low conduction and switching losses. For power management applications, conduction losses, ruggedness and avalanche capability are important features.

 

How do you test a power Mosfet?

1) Hold the MosFet by the case or the tab but don't touch the metal parts of the test probes with any of the other MosFet's terminals until needed. 2) First, touch the meter positive lead onto the MosFet's 'Gate'. 3) Now move the positive probe to the 'Drain'. You should get a 'low' reading.

 

IRF520NPBF Documents & Media

Download datasheets and manufacturer documentation for Infineon Technologies IRF520NPBF.

IRF520NPBF PCB Symbol, Footprint & 3D Model

Infineon Technologies IRF520NPBF

Infineon Technologies

MOSFET N-CH 100V 9.7A TO-220AB

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