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IRF3205 MOSFET: Pinout, Equivalent, Datasheet [Video&FAQ]

  • Contents

IRF3205 is a high-current N-channel MOSFET that can switch currents up to 110A and 55V.  It can be readily found in the TO-220AB package. This chip is mainly used in consumer full bridge applications as well as dynamic dv/dt rating.

 

In today's blog, we will bring you with the detailed introduction to IRF3205, and we will try to cover every aspects of this device including its pinout, features, parameters, equivalents, applications and so on.


Catalog

IRF3205 Overview

IRF3205 Related Video Instruction

IRF3205 Pinout

IRF3205 Features

IRF3205 Parameters

IRF3205 Advantages

IRF3205 Alternatives

IRF3205 Equivalents

IRF3205 Applications

IRF3205 Package

Component Datasheet

FAQ


IRF3205 Overview

The IRF3205 is a high-current N-Channel MOSFET that can switch currents up to 110A and 55V. The specialty of the MOSFET is that it has very low on resistance of only 8.0mΩ,  making it suitable for switching circuits such as inverters, motor speed controllers, DC-DC converters etc. It is also one of the easily available and cheap MOSFET with a low on-resistance.

 

So if you are looking for a MOSFET to be used in your switching circuit that operates below 55V and less than 110A, you can consider using the IRF3205. Note that the IRF3205 has high threshold voltage and hence not ideal for on/off control with embedded controllers. You can try the IRF540N for that purpose.


This video shows how IRF3205 works in a circuit in an easy way.

Video: How to Make a Voltage Regulator use mosfet irf3205 - (Easy Way)

IRF3205 Video Description:

how to make adjustable voltage regulator use Mosfet irf3205 you can use mosfet irf3205 or irfz44n.


IRF3205 Pinout

IRF3205 Pinout

 

Pin Number Pin Name Description
1 Gate Controls the biasing of the MOSFET
2 Drain Current flows in through Drain
3 Source Current flows out through Source

IRF3205 Features

  • N-Channel Power MOSFET

  • Continuous Drain Current (ID) is 110A when VGS is 10V

  • Minimum Gate threshold voltage 2V

  • Drain to Source Breakdown Voltage: 55V

  • Low On-Resistance of 8.0mΩ

  • Gate-Source Voltage is (VGS) is ±20V

  • Rise time is 101ns

  • It is commonly used with Power Switching circuits

  • Available in To-220 package


IRF3205 Parameters

Parametrics IRF3205
ID (@25°C)   max 110.0 A
Mounting THT
Ptot   max 150.0 W
Package To-220
Polarity N
QG (typ @10V) 97.3 nC
Qgd 36.0 nC
RDS (on) (@10V)   max 8.0 mΩ
RthJC   max 1.0 K/W
Tj   max 175.0 °C
VDS   max 55.0 V
VGS(th)   min  max 3.0 V 2.0 V   4.0 V
VGS   max 20.0 V

IRF3205 Advantages

  • Planar cell structure for wide SOA

  • Optimized for broadest availability from distribution partners

  • Product qualification according to JEDEC standard

  • Silicon optimized for applications switching below <100kHz

  • Industry standard through-hole power package

  • High-current carrying capability package (up to 195 A, die-size dependent)

  • Capable of being wave-soldered


IRF3205 Alternatives

Alternatives for IRF3205: IRF1405, IRF1407, IRF3305, IRFZ44N, IRFB3077, IRFB4110

Other N-channel MOSFETS: IRF540N, 2N7000 , FDV301N


IRF3205 Equivalents

Part Number Description Manufacturer

STP80NE06-10

TRANSISTORS

80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics

HUF75344P3

TRANSISTORS

N-Channel UltraFET® Power MOSFET 55V, 75A, 8mΩ, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 800/RAIL Fairchild Semiconductor Corporation

HUF75339P3

TRANSISTORS

Power Field-Effect Transistor, 70A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor

IRF3205

TRANSISTORS

Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier

MTP75N05HD

TRANSISTORS

Power Field-Effect Transistor, 75A I(D), 50V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Motorola Semiconductor Products

FQP70N10

TRANSISTORS

Power MOSFET, N-Channel, QFET®, 100 V, 57 A, 23 mΩ, TO-220, 1000-TUBE ON Semiconductor

MTP75N06HD

TRANSISTORS

Power Field-Effect Transistor, 75A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Motorola Semiconductor Products

HUF75344P3_NL

TRANSISTORS

75A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Rochester Electronics LLC

IRF3205PBF

TRANSISTORS

Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier

IRF3205Z

TRANSISTORS

Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier

IRF3205 Applications

  • Switching Applications

  • Boost converters

  • Choppers

  • Solar inverters

  • Speed control


IRF3205 Package

IRF3205 Package


Component Datasheet

IRF3205 Datasheet


FAQ

  • What is IRF3205?

IRF3205 is N Channel HEXFET. HEXFET is the power MOSFET that can be readily found in the TO-220AB package. The operating voltage range of this package is 55 volts & 110 volts. This chip is mainly used in consumer full bridge applications as well as dynamic dv/dt rating.

  • How does Mosfet work?

In general, the MOSFET works as a switch, the MOSFET controls the voltage and current flow between the source and drain. The working of the MOSFET depends on the MOS capacitor, which is the semiconductor surface below the oxide layers between the source and drain terminal.

  • How do you test a Mosfet?

1) Hold the MosFet by the case or the tab but don't touch the metal parts of the test probes with any of the other MosFet's terminals until needed. 2) First, touch the meter positive lead onto the MosFet's 'Gate'. 3) Now move the positive probe to the 'Drain'. You should get a 'low' reading.

  • Why Mosfet are better than transistor?

This is because the mosfet works faster because it uses metal oxide regardless of the bjt that relies on the electronic hole combination. mosfet consumes much less power when switching at high frequency because of its faster switching speed.

 

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