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IRF1404 MOSFET: Datasheet, Equivalents, Pinout [Video&FAQ]

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Product Overview

Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

 

This blog will introduce IRF1404 systematically from its features, pinout to its specifications, applications, also including IRF1404 datasheet and so much more.

 

Catalog

Product Overview

Related Video Introduction

IRF1404 Features

IRF1404 Pinout

IRF1404 Equivalents

IRF1404 Circuit Diagram

IRF1404 Package

IRF1404 Specification

IRF1404 Manufacturer

IRF1404 Datasheet

Using Warnings

IRF1404 FAQ

 

 

Video: IRF1404 mosfet Inverter Circuit

 

IRF1404 Video Description: In today's video, you will learn how to make IRF1404 mosfete Inverter  Circuit Diagram using Proteus software.

 

IRF1404 Features

  • Planar cell structure for wide SOA 
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Industry standard surface-mount power package
  • High-current rating
  • Increased ruggedness
  • Multi-vendor compatibility
  • Industry standard qualification level
  • Standard pinout allows for drop in replacement
  • High current carrying capability

 

IRF1404 Pinout

The following figure is the diagram of IRF1404 pinout.

 

VDSS = 40V

RDS(on) = 0.004Ω

ID = 202A

 

IRF1404 Pinout

IRF1404 Pinout

 

IRF1404 Equivalents

  • IRF2804
  • IRFB3004
  • IRFB3077
  • IRFB3077
  • IRFB3206
  • IRFB3004
  • IRFB3006
  • IRFB3006G
  • IRFB3004G
  • IRFB3077

 

IRF1404 Circuit Diagram

The following are the circuit diagrams of IRF1404.

 

Switching Time Test Circuit

Switching Time Test Circuit

 

Unclamped Inductive Test Circuit

Unclamped Inductive Test Circuit

 

 Gate Charge Test Circuit

 Gate Charge Test Circuit

 

Peak Diode Recovery dv/dt Test Circuit

Peak Diode Recovery dv/dt Test Circuit

 

IRF1404 Package

The following diagram shows the IRF1404 package.

 

IRF1404 Package

IRF1404 Package

IRF1404 Package

IRF1404 Package

 

IRF1404 Specification

Product Attribute Attribute Value
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 40 V
Id - Continuous Drain Current: 162 A
Rds On - Drain-Source Resistance: 4 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Qg - Gate Charge: 160 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 333 W
Channel Mode: Enhancement
Brand: Infineon / IR
Configuration: Single
Fall Time: 33 ns
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 190 ns
Transistor Type: 1 N-Channel

 

IRF1404 Manufacturer

Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.

 

IRF1404 Datasheet

You can download IRF1404 datasheet from the link given below:

IRF1404 Datasheet

 

Using Warnings

Note: Please check their parameters and pin configuration before replacing them in your circuit.

 

IRF1404 FAQ

What is the difference between power Mosfet and MOSFET?

Power MOSFET is a type of MOSFET which is specially meant to handle high levels of power. These exhibit high switching speed and can work much better in comparison with other normal MOSFETs in the case of low voltage levels. However its operating principle is similar to that of any other general MOSFET.

 

What does MOSFET power mean?

Power MOSFET is a type of metal oxide semiconductor field-effect transistor used to switch large amounts of current. Power MOSFETs are the most commonly used power devices due to their low gate drive power, fast switching speed and superior paralleling capability. Engineering Glossary.

 

What are the applications of power Mosfet?

Power MOSFETs are commonly used in automotive electronics, particularly as switching devices in electronic control units, and as power converters in modern electric vehicles. The insulated-gate bipolar transistor (IGBT), a hybrid MOS-bipolar transistor, is also used for a wide variety of applications.

 

What is the disadvantage of MOSFET?

Has a short life. Required repeated calibration for accurate dose measurement. They have very susceptible to overload voltage, hence due to installation special handling is to be required.

 

What are advantages of power Mosfet?

The power MOSFET is the most common power semiconductor device in the world, due to its low gate drive power, fast switching speed, easy advanced paralleling capability, wide bandwidth, ruggedness, easy drive, simple biasing, ease of application, and ease of repair.

IRF1404 Documents & Media

Download datasheets and manufacturer documentation for Infineon IRF1404.
Datasheets
datasheet

IRF1404 PCB Symbol, Footprint & 3D Model

Infineon IRF1404

Infineon

N-channel MOSFET,IRF1404 162A 40V

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