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IPB120P04P4-04 Power-Transistor Datasheet PDF Download

  • Contents

Catalog

Features

Product Summary

Maximum ratings

Thermal characteristics

Electrical characteristics

Dynamic characteristics

Gate Charge Characteristics

Reverse Diode

IPB120P04P4-04 Datasheet

IPB120P04P4-04 FAQ

 

Features

  • P-channel - Normal Level - Enhancementmode

 

  • AECqualified

 

  • MSL1 up to 260°C peakreflow

 

  • 175°C operatingtemperature

 

  • Green package (RoHScompliant)

 

  • 100% Avalanchetested

 

Product Summary

VDS -40 V
RDS(on) (SMD Version) 3.5 m
ID -120 A

 

Type Package Marking
IPB120P04P4-04 PG-TO263-3-2 4PP0404
IPI120P04P4-04 PG-TO262-3-1 4PP0404
IPP120P04P4-04 PG-TO220-3-1 4PP0404

Figure01

 

Maximum ratings

at T j=25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

 

Continuous drain current1)

 

I D

T C=25°C,

V GS=-10V

 

-120

 

A

T C=100°C,

V GS=-10V2)

 

-110

Pulsed drain current2)

I D,pulse

T C=25°C

-480

Avalanche energy, single pulse

E AS

I D=-60A

78

mJ

Avalanche current, single pulse

I AS

-

-120

A

Gate source voltage

V GS

-

±20

V

Power dissipation

P tot

T C=25 °C

136

W

Operating and storage temperature

T j, T stg

-

-55 ... +175

°C

IEC climatic category; DIN IEC 68-1

-

-

55/175/56

 

 

Thermal characteristics

Thermal resistance, junction - case

R thJC

-

-

-

1.1

K/W

Thermal resistance, junction - ambient, leaded

 

R thJA

 

-

 

-

 

-

 

62

SMD version, device on PCB

R thJA

minimal footprint

-

-

62

6 cm2 cooling area3)

-

-

40

 

Electrical characteristics

at T j=25 °C, unless otherwise specified


Static characteristics

Drain-source breakdown voltage

V (BR)DSS

V GS=0V, I D= -1mA

-40

-

-

V

Gate threshold voltage

V GS(th)

V DS=V GS, I D=-340µA

-2.0

-3.0

-4.0

 

Zero gate voltage drain current

 

I DSS

V DS=-32V, V GS=0V,

T j=25°C

 

-

 

-0.05

 

-1

 

µA

V DS=-32V, V GS=0V,

T j=125°C2)

 

-

 

-20

 

-200

Gate-source leakage current

I GSS

V GS=-20V, V DS=0V

-

-

-100

nA

Drain-source on-state resistance

R DS(on)

V GS=-10V, I D=-100A

-

2.9

3.8

mW

V GS=-10V, I D=-100A,

SMD version

 

-

 

2.6

 

3.5

 

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

 

Dynamic characteristics

Input capacitance

C iss

 

V GS=0V, V DS=-25V,

f =1MHz

-

11380

14790

pF

Output capacitance

C oss

-

3410

4430

Reverse transfer capacitance

Crss

-

90

180

Turn-on delay time

t d(on)

 

V DD=-20V,

V GS=-10V, I D=-120A,

R G=3.5W

-

30

-

ns

Rise time

t r

-

20

-

Turn-off delay time

t d(off)

-

49

-

Fall time

t f

-

52

-

 

Gate Charge Characteristics

Gate to source charge

Q gs

 

V DD=-32V,

I D=-120A,

V GS=0 to -10V

-

62

80

nC

Gate to drain charge

Q gd

-

30

60

Gate charge total

Q g

-

158

205

Gate plateau voltage

V plateau

-

-5.3

-

V

 

Reverse Diode

Diode continous forward current2) I S   - - -120 A
Diode pulse current2) I S,pulse T C=25°C - - -480
    V GS=0V, I F=-100A,        
Diode forward voltage V SD T j=25°C - -1 -1.3 V
Reverse recovery time2) t rr V R=-20V, I F=-50A, - 69 - ns
Reverse recovery charge2) Q rr di F/dt =-100A/µs - 95 - nC

1) Current is limited by bondwire; with an R thJC = 1.1K/W the chip is able to carry -155A at 25°C.

2) Defined by design. Not subject to production test.

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.

 

1 Power dissipation                                                              2 Drain current

P tot = f(T C); V GS ≤ -6V                                                       I D = f(T C); V GS ≤ -6V; SMD

Figure02-IPB120P04P4-04

 

 

3 Safe operating area                                                   4 Max. transient thermal impedance

I D = f(V DS); T C = 25 °C; D = 0; SMD                           Z thJC = f(t p)

parameter: t p                                                                 parameter: D =t p/T

Figure03-IPB120P04P4-04

 

 

5 Typ. output characteristics                                      6 Typ. drain-source on-state resistance

I D = f(V DS); T j = 25 °C; SMD                                   R DS(on) = (I D); T j = 25 °C; SMD

parameter: V GS                                                         parameter: V GS

Figure04-IPB120P04P4-04

 

 

7 Typ. transfer characteristics                                   8 Typ. drain-source on-state resistance

I D = f(V GS); V DS = -6V                                         R DS(on) = f(T j ); I D = -100 A; V GS = -10 V; SMD

parameter: T j

Figure05-IPB120P04P4-04

 

 

9 Typ. gate threshold voltage                                         10 Typ. capacitances

V GS(th) = f(T j ); V GS = V DS                                        C = f(V DS); V GS = 0 V; f = 1 MHz

parameter: I D

Figure06-IPB120P04P4-04

 

 

11 Typical forward diode characteristicis                      12 Drain-source breakdown voltage

IF = f(VSD)                                                                      VBR(DSS) = f(T j ); I D = -1 mA

parameter: T j

Figure07-IPB120P04P4-04

 

 

13 Typ. gate charge                                                    14 Gate charge waveforms

V GS = f(Q gate); I D = -120 A pulsed

parameter: V DD

Figure08-IPB120P04P4-04

 

IPB120P04P4-04 Datasheet

You can download the datasheet from the link given below.

IPB120P04P4-04-Datasheet

 

IPB120P04P4-04 FAQ

What is the difference between transistor and power transistor?

A power transistor is larger than a normal transistor and is capable of carrying more current without melting or burning the transistor. Usually, a power transistor has a heat sink attached to it to remove the heat from the device and keep it cool.
 

How do you use a power transistor?

Attach high-current load (i.e. the motor or light) to its power source, and then to the collector of the transistor. Then connect the emitter of the transistor to ground. Then to control the motor, you apply voltage to the transistor's base.
 

What do power transistors do?

A transistor is a semiconductor device used to amplify or switch electrical signals and power. ... Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits.
 

PCB Symbol, Footprint & 3D Model

 

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