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HMC462 Amplifier: Functional Diagram, Datasheet, Features [FAQ]

  • Contents

Catalog

Description

Functional Diagram

Assembly Diagram

Outline Drawing

Features

Typical Applications

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs

Handling Precautions

Mounting

Wire Bonding

Datasheet

Specifications

Manufacturer

Using Warning

FAQ

Description

The HMC462 is a GaAs MMIC pHEMT Low Noise Distributed Amplifier which operates between 2 and 20 GHz. The amplifier provides 15 dB of small signal gain, 2.5 dB noise figure, and up to +15.5 dBm of output power at 1dB compression. Gain flatness is excellent at ±0.3 dB from 8 - 14 GHz making the HMC462 ideal for EW, ECM, and Radar applications.

 

The HMC462 requires a single supply of +5V @ 63 mA and is the self biased version of the HMC463. The wideband amplifier I/Os are internally matched to 50 Ohms facilitating integration into Multi-Chip Modules (MCMs). All data is measured with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mils) length.

 

Functional Diagram

HMC462-Functional-Diagram

 

Figure: Functional Diagram

 

Assembly Diagram

HMC462-Assembly-Diagram

 

Figure: Assembly Diagram

 

Outline Drawing

HMC462-Outline-Drawing

 

Figure: Outline Drawing

 

Features

  • Noise Figure: 2 dB
  • Gain: 15 dB
  • P1dB +15.5 dBm
  • Self-Biased: +5V @ 63 mA
  • 50 Ohm Matched Input/Output
  • Die Size: 3.0 x 1.3 x 0.1 mm

 

Typical Applications

The HMC462 is ideal for:

  • Test Instrumentation
  • Microwave Radio & VSAT
  • Military & Space
  • Telecom Infrastructure
  • Fiber Optics

 

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs

The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note).

 

50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip. If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane.

 

Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).

 

Handling Precautions

Follow these precautions to avoid permanent damage.

 

Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.

 

Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.

 

Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes.

 

Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup.

 

General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.

 

Mounting

The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat.

 

Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 ℃ and a tool temperature of 265 ℃. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 ℃. DO NOT expose the chip to a temperature greater than 320 ℃ for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment.

 

Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.

 

Wire Bonding

Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150℃ and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).

 

Datasheet

You can download the datasheet from the link given below:

HMC462-Datasheet

 

Specifications

Manufacturer: Analog Devices Inc.
Product Category: RF Amplifier
Mounting Style: SMD/SMT
Type: Low Noise Amplifiers
Technology: GaAs
Operating Frequency: 2 GHz to 20 GHz
P1dB - Compression Point: 15.5 dBm
Gain: 15 dB
Operating Supply Voltage: 5 V
NF - Noise Figure: 2 dB
OIP3 - Third Order Intercept: 26 dBm
Operating Supply Current: 63 mA
Minimum Operating Temperature: - 55 ℃
Maximum Operating Temperature: + 85 ℃
Series: HMC462G
Packaging: Gel Pack
Brand: Analog Devices
Frequency Range: 2 GHz to 20 GHz
Input Return Loss: 19 dB
Number of Channels: 1 Channel
Pd - Power Dissipation: 2.2 W
Product Type: RF Amplifier
Factory Pack Quantity: 25
Subcategory: Wireless & RF Integrated Circuits
Test Frequency: 8 GHz to 16 GHz
Unit Weight: 0.035838 oz

 

Manufacturer

Analog Devices, Inc. (ADI), also known simply as Analog, is an American multinational semiconductor company specializing in data conversion, signal processing and power management technology, headquartered in Wilmington, Massachusetts.

 

Using Warning

Note: Please check their parameters and pin configuration before replacing them in your circuit.

 

FAQ

What does a low noise amplifier do?

A low-noise amplifier (LNA) is commonly found in all receivers. Its role is to boost the received signal a sufficient level above the noise floor so that it can be used for additional processing. The noise figure of the LNA therefore directly limits the sensitivity of the receiver.

 

Why low noise amplifier is not kept at the indoor unit?

For low noise, the amplifier needs to have a high amplification in its first stage. Therefore JFETs and HEMTs are often used. The LNA boosts the antenna signal to compensate for the feedline losses going from the (outdoor) antenna to the (indoor) receiver.

 

What is the difference between low noise amplifier and power amplifier?

Power amplifier is optimized for power gain. It does not have to be differential, for example. Types: audio amplifiers, video amplifiers, buffers, RF, etc. Low-noise amplifier (LNA) is optimized for low input noise, either voltage noise Vn or current noise In.

 

PCB Symbol, Footprint & 3D Model

 

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