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BLF188XR Power LDMOS Transistor: Datasheet, Pinout, Circuit [Video&FAQ]

  • Contents

Product Overview

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

 

This blog will introduce BLF188XR systematically from its features, pinout to its specifications, applications, also including BLF188XR datasheet and so much more.

 

Catalog

Product Overview

Related Video Introduction

BLF188XR Features

BLF188XR Pinout

BLF188XR Applications

BLF188XR Circuit Diagram

BLF188XR Package

BLF188XR Specification

BLF188XR Manufacturer

BLF188XR Datasheet

Using Warnings

BLF188XR FAQ

 

 

Video: BLF188XR LDMOS HF LINEAR AMPLIFIER

 

BLF188XR Features

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (HF to 600 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

 

BLF188XR Pinout

The following figure is the diagram of BLF188XR pinout.

 

BLF188XR Pinout

BLF188XR Pinout

 

BLF188XR Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter applications

 

BLF188XR Circuit Diagram

The following is the circuit diagram of BLF188XR.

 

BLF188XR Circuit Diagram

BLF188XR Circuit Diagram

 

BLF188XR Package

The following diagram shows the BLF188XR package.

 

BLF188XR Package

BLF188XR Package

 

BLF188XR Specification

TYPE DESCRIPTION
Category Discrete Semiconductor Products
Transistors - FETs, MOSFETs - RF
Mfr Ampleon USA Inc.
Package Tray
Product Status Active
Transistor Type LDMOS (Dual), Common Source
Frequency 108MHz
Gain 24.4dB
Voltage - Test 50 V
Current - Test 40 mA
Power - Output 1400W
Voltage - Rated 135 V
Package / Case SOT-539A
Supplier Device Package SOT539A

 

BLF188XR Manufacturer

Created in 2015, Ampleon is shaped by more than 50 years of RF Power leadership. The company envisions to make the world a better place through innovation in high frequency applications based on the advanced LDMOS and GaN technologies. Ampleon has more than 1,600 employees worldwide, dedicated to enable their customers to be successful with RF Power products through close cooperation and partnership, innovation, and excellent execution. Its innovative, yet consistent portfolio offers products and solutions for 4G LTE and 5G NR infrastructure, industrial, scientific, medical, broadcast, aerospace, and defense applications.

 

BLF188XR Datasheet

You can download BLF188XR datasheet from the link given below:

BLF188XR Datasheet

 

Using Warnings

Note: Please check their parameters and pin configuration before replacing them in your circuit.

 

BLF188XR FAQ

What is LDMOS?

LDMOS (laterally-diffused metal-oxide semiconductor) is a planar double-diffused MOSFET (metal–oxide–semiconductor field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. These transistors are often fabricated on p/p+ silicon epitaxial layers.

 

How LDMOS works?

LDMOS channel current is controlled by the vertical electric field induced by the gate and the lateral field that exists between the source and drain. The depletion region between the source and drain is dependent on the junction doping profiles.

 

Where is LDMOS used?

LDMOS devices are widely used in RF power amplifiers for base-stations as the requirement is for high output power with a corresponding drain to source breakdown voltage usually above 60 volts. Compared to other devices such as GaAs FETs they show a lower maximum power gain frequency.

PCB Symbol, Footprint & 3D Model

 

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