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2N7000 Transistor: Circuit, Equivalent, Replacement [Video]

  • Contents
Executive Summary (2026 Update): The 2N7000 is an industry-standard N-Channel Enhancement Mode MOSFET widely used for low-power switching (up to 60V/200mA) in logic-level circuits. Ideal for interfacing 3.3V/5V microcontrollers (Arduino, ESP32) with higher voltage loads, it remains a staple in prototyping due to its low gate threshold and TO-92 form factor.

What is the 2N7000 MOSFET?

The 2N7000 is a widely used N-Channel Enhancement Mode Field Effect Transistor (MOSFET) designed for voltage-controlled small signal switching. As of 2026, it remains the go-to component for hobbyists and engineers requiring a reliable logic-level switch for loads under 200mA.

2N7000 N Channel Enhancement Mode MOSFET Switch Circuit Basics


What is the 2N7000 Pinout Configuration?

The 2N7000 (TO-92 package) features three terminals: Source (1), Gate (2), and Drain (3). Correct identification is critical, as swapping pins with similar MOSFETs (like the BS170) will cause circuit failure.

2N7000 Pinout Diagram Source Gate Drain

Pin Number

Pin Name

Description

1

Source (S)

Current flows out through Source (Connected to Ground in N-Channel switching)

2

Gate (G)

Controls the biasing; accepts logic-level voltage (3.3V - 5V) to trigger the switch

3

Drain (D)

Current flows in through Drain (Connected to Load)


Key 2N7000 Datasheet Parameters (2026 Standards)

These specifications represent the standard operating limits for the 2N7000 as manufactured by major silicon vendors (Microchip, Onsemi, Vishay) in 2026.

Configuration

SINGLE N-CHANNEL WITH BUILT-IN DIODE

Continuous Drain Current (ID)

200mA (Standard)

Drain Current-Max (Pulsed)

500mA (0.5 A)

Gate Threshold Voltage (Vgs(th))

0.8V (Min) to 3.0V (Max) - Logic Level Compatible

Drain to Source Voltage (Vdss)

60V

Drain-source On Resistance (Rds(on))

Max 5 Ω @ 10V Vgs

DS Breakdown Voltage-Min

60 V

Element Configuration

Single

Input Capacitance (Ciss)

Max 60 pF (Low capacitance for fast switching)

FET Technology

METAL-OXIDE SEMICONDUCTOR (DMOS)

Gate to Source Voltage Max (Vgs)

±20V to ±30V (depending on manufacturer)

Height

5.33mm

JEDEC Package Code

TO-92 (Through-Hole)

Lead Free Status

RoHS Compliant / Pb-Free

Length

5.21mm

Primary Manufacturers

Microchip, Onsemi, Vishay, Diodes Inc.

Max Power Dissipation

350mW - 400mW (approx 1W with heat sinking)

Operating Temperature Range

-55 °C to +150 °C

Polarity

N-CHANNEL Enhancement Mode

Transistor Application

Small Signal Switching, Logic Level Shifting


Why Choose the 2N7000? (Key Features)

The 2N7000 remains popular in 2026 designs because it combines the durability of older silicon processes with modern logic compatibility.

  • Logic Level Compatible: Low threshold voltage (0.8V - 3V) allows direct driving from Arduino, ESP32, and Raspberry Pi GPIOs.
  • Rugged Design: Free from secondary breakdown and thermal runaway.
  • Efficiency: Low power drive requirement with high input impedance.
  • Speed: Low CISS (Input Capacitance) ensures fast switching speeds (typically <10ns).
  • Flexibility: Ease of paralleling for higher current handling.
  • Protection: Integral source-drain diode (Body Diode) handles inductive kickback.

Common 2N7000 Applications in 2026

While surface-mount components dominate mass production, the 2N7000 is essential for:

  • Motor Control: Driving small DC motors or fans from microcontroller pins.
  • Logic Level Shifting: Converting 3.3V logic to 5V or 12V signals.
  • LED Drivers: Switching high-brightness LEDs or LED strips.
  • Relay Drivers: Activating mechanical relays or solenoids.
  • Audio Amplifiers: Small signal amplification in high-fidelity audio circuits.

The 2N7000 has historically been nicknamed the "FETlington" (a portmanteau of FET and Darlington) due to its high gain and saturation characteristics similar to Darlington transistors, making it an "absolutely ideal hacker part" for rapid prototyping.

Advantages over Bipolar Junction Transistors (BJTs):

  • High Input Impedance: The insulated gate draws almost zero current, meaning it does not load the microcontroller's GPIO pin.
  • Simplicity: No current-limiting base resistor is required (though a small gate resistor is recommended to dampen ringing).
  • Paralleling: MOSFETs have a positive temperature coefficient, preventing current hogging when used in parallel.

Disadvantages to Consider:

  • ESD Sensitivity: Like all MOSFETs, the gate is susceptible to static discharge damage.
  • Floating Gate: The gate must never be left floating; a pull-down resistor (10kΩ) is mandatory to keep the switch "OFF" during startup.

2N7000 Technical Advantage

The 2N7000 utilizes vertical DMOS technology. This structure delivers the power handling of bipolar transistors with the high input impedance of MOS devices. In modern 2026 applications, this allows for efficient switching without the thermal runaway risks associated with older BJT designs. It is ideally suited for applications requiring very low threshold voltage and high breakdown voltage (60V).


2N7000 Switching Waveforms and Test Circuit

Understanding the switching characteristics is vital for high-frequency applications (PWM).

2N7000 switching waveforms rise time and fall time test circuit


2N7000 Package Information (TO-92)

The 2N7000 is most commonly found in the TO-92 through-hole package.

  • Front View (Flat Side): Leads facing down.

2N7000 TO-92 package front view dimensions

  • Side View:

2N7000 TO-92 package side view dimensions

  • Bottom View (Pin Identification):

2N7000 TO-92 package bottom view pinout

  


Demand for the 2N7000 remains strong in regions with high educational and hobbyist electronics activity.

2N7000 popularity by region graph


2N7000 Alternatives & Equivalents

In 2026, engineers often choose between the 2N7000 and the BS170. Warning: While specifications are similar, the pinout is reversed.

Part Number

Package

Key Difference

2N7000

TO-92

Standard (S-G-D). ID=200mA.

BS170

TO-92

Reversed Pinout (D-G-S). Higher Current (500mA).

2N7002

SOT-23 (SMD)

Surface Mount equivalent. Best for modern PCBs.


Step-by-Step: How to Use the 2N7000 in a Circuit

The 2N7000 acts as a low-side switch. Follow these steps to control a 24V load using a 3.3V or 5V microcontroller.

  1. Connect Source to Ground: Pin 1 (Source) must connect to the common ground (GND).
  2. Connect Load to Drain: Connect the negative wire of your load (Motor, LED) to Pin 3 (Drain). Connect the positive wire of the load to your power supply (up to 60V).
  3. Control via Gate: Connect Pin 2 (Gate) to your microcontroller's GPIO pin.
  4. Add Protection:
    • Place a 10kΩ Pull-Down Resistor between Gate and Ground to prevent floating.
    • If driving a motor (inductive load), place a Flyback Diode across the motor terminals to prevent voltage spikes.

Example Circuit: The diagram below shows a 2N7000 controlling a 24V load.

2N7000 circuit diagram for controlling 24V motor

Logic: When the Gate Voltage (VGS) exceeds the threshold (approx 2.1V), the MOSFET turns ON, completing the circuit for the load. When VGS is 0V (Grounded), the MOSFET turns OFF.


Where to use 2N7000

The 2N7000 is ideal for scenarios requiring a compact N-channel switch.

  • Low Power Switching: Loads < 200mA and < 60V.
  • Signal Processing: Fast switching times make it suitable for data signal modulation.
  • Level Shifting: Interfacing 3.3V logic to 12V automotive systems.
  • Space Constrained Designs: The TO-92 package is small yet easy to hand-solder.

Product Manufacturer

Microchip Technology Inc. is a key manufacturer (following the acquisition of Supertex). However, due to its industry-standard nature, the 2N7000 is also produced by Onsemi, Vishay, and Diode Inc., ensuring widespread availability in 2026.


Frequently Asked Questions (FAQ)

  • What is a 2N7000 MOSFET used for?

The 2N7000 is a small signal N-channel MOSFET used to switch low-power loads (up to 60V, 200mA). It acts like a digital switch, allowing low-voltage logic (like a 3.3V microcontroller) to control higher voltage devices like relays, LEDs, and small motors.

  • What is the maximum voltage for a 2N7000?

The 2N7000 has a maximum Drain-Source Voltage (VDS) of 60V. The Gate-Source Voltage (VGS) limit is typically ±20V to ±30V.

  • What is the Gate Threshold Voltage?

The gate threshold voltage (VGS(th)) is between 0.8V and 3.0V. This means it begins to conduct at very low voltages, making it compatible with 3.3V logic systems.

  • Is the 2N7000 N-Channel or P-Channel?

It is an N-Channel Enhancement Mode MOSFET. It requires a positive voltage on the Gate relative to the Source to turn on.

  • Can I replace a 2N7000 with a BS170?

Yes, but be careful. While electrically similar, the pinout is reversed. 2N7000 is Source-Gate-Drain (1-2-3), while BS170 is Drain-Gate-Source (1-2-3). You must rotate the BS170 180 degrees to fit a 2N7000 PCB footprint.

  • Does the 2N7000 need a gate resistor?

Technically, no current limiting resistor is needed because the gate impedance is infinite. However, a small resistor (e.g., 100Ω) is recommended to prevent ringing (oscillations), and a pull-down resistor (10kΩ) is required to prevent floating states.

2N7000 Documents & Media

Download datasheets and manufacturer documentation for ON Semiconductor 2N7000.

2N7000 PCB Symbol, Footprint & 3D Model

ON Semiconductor 2N7000

ON Semiconductor

ON SEMICONDUCTOR - 2N7000 - MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

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