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2SK170 Datasheet, Equivalent, N-Channel MOSFET [FAQ]

  • Contents

Catalog

2SK170 Features

2SK170 Pinout

Absolute Maximum Ratings

Electrical Characteristics

Typical Performance Characteristics

Restrictions On Product Use

2SK170 Manufacturer

2SK170 Datasheet

Using Warnings

2SK170 FAQ

 

2SK170 Features

  • Recommended for first stages of EQ and M.C. head amplifiers.
  • High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA)
  • High breakdown voltage: VGDS = −40 V
  • Low noise: En = 0.95 nV/Hz1/2 (typ.)

 (VDS = 10 V, ID = 1 mA, f = 1 kHz)

  • High input impedance: IGSS = −1 nA (max) (VGS = −30 V)

 

2SK170 Pinout

 

2SK170 Pinout

2SK170 Pinout

 

Absolute Maximum Ratings

Characteristics

Symbol

Rating

Unit

Gate-drain voltage

VGDS

-40

V

Gate current

IG

10

mA

Drain power dissipation

PD

400

mW

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

-55~125

°C

 

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

 

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

 

Electrical Characteristics

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate cut-off current

IGSS

VGS = -30 V, VDS = 0

¾

¾

-1.0

nA

Gate-drain breakdown voltage

V (BR) GDS

VDS = 0, IG = -100 mA

-40

¾

¾

V

 

Drain current

IDSS

(Note)

VDS = 10 V, VGS = 0

 

2.6

 

¾

 

20

 

mA

Gate-source cut-off voltage

VGS (OFF)

VDS = 10 V, ID = 0.1 mA

-0.2

¾

-1.5

V

Forward transfer admittance

ïYfsï

VDS = 10 V, VGS = 0, f = 1 kHz

¾

22

¾

mS

Input capacitance

Ciss

VDS = 10 V, VGS = 0, f = 1 MHz

¾

30

¾

pF

Reverse transfer capacitance

Crss

VDG = 10 V, ID = 0, f = 1 MHz

¾

6

¾

pF

 

 

Noise figure

NF (1)

VDS = 10 V, ID = 1.0 mA, RG = 1 kW,

f = 1 kHz

¾

1.0

10

 

 

dB

NF (2)

VDS = 10 V, ID = 1.0 mA, RG = 1 kW,

f = 1 kHz

¾

0.5

2

 

Note: IDSS classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA

 

Typical Performance Characteristics

 

Static Characteristics

Static Characteristics

 

Id - Vds (low Voltage Region)

Id - Vds (low Voltage Region)

 

ID - VGS

ID - VGS

 

|Yfs|-ID

|Yfs|-ID

 

|Yfs|-IDSS

|Yfs|-IDSS

 

VGS (OFF)-IDSS

VGS (OFF)-IDSS

 

Ciss-VDS

Ciss-VDS

 

Crss-VGD

Crss-VGD

 

En-ID

En-ID

 

NF-ID

NF-ID

 

NF-VDS

NF-VDS

 

NF-RG

NF-RG

 

NF-f

NF-f

 

IGSX - VDS

IGSX - VDS

 

Restrictions On Product Use

  • ToshibaCorporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without 
  • Thisdocument and any information herein may not be reproduced without prior written permission from  Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
  • ThoughTOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or  Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
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2SK170 Manufacturer

Toshiba Electronic Devices & Storage Corporation (TDSC) offers a broad IC and discrete product line-up which includes Power, Small Signal, Optoelectronics, and Logic devices for automotive, multimedia, industrial, telecoms, and networking applications. TDSC develops, manufactures, and supplies innovative storage products including Enterprise and Consumer HDDs.

 

2SK170 Datasheet

You can download 2SK170 datasheet from the link given below:

2SK170 Datasheet

 

Using Warnings

Note: Please check their parameters and pin configuration before replacing them in your circuit.

 

2SK170 FAQ

What is a field effect transistor?

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs are devices with three terminals: source, gate, and drain. Field effect transistors generally display very high input impedance at low frequencies.

 

What is difference between transistor and field effect transistor?

Key Difference between BJT and FET. Bipolar junction transistors are bipolar devices, in this transistor, there is a flow of both majority & minority charge carriers. Field-effect transistors are unipolar devices, in this transistor, there are only the majority charge carriers flows.

 

Why BJT and FET named so?

Bipolar transistors are so named because they conduct by using both majority and minority carriers. The field-effect transistor (FET), sometimes called a unipolar transistor, uses either electrons (in N-channel FET) or holes (in P-channel FET) for conduction. You are correct. There are fields inside of a BJT.

2SK170 PCB Symbol, Footprint & 3D Model

Toshiba 2SK170

Toshiba

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