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2N4126 Bipolar Transistors: Datasheet, Pinout, Equivalents [Video&FAQ]

  • Contents

Product Overview

The 2N4126 is a -25V PNP silicon Transistor capable of 625mW power dissipation and 800mA collector current. The NTE159 is designed for audio amplifier and switching applications. It is complementary to NTE123AP.

 

This blog will introduce 2N4126 systematically from its features, pinout to its specifications, applications, also including 2N4126 datasheet and so much more.

 

Catalog

Product Overview

Related Video Introduction

2N4126 Features

2N4126 Pinout

2N4126 Equivalents

2N4126 DC Current Gain

2N4126 Package

2N4126 Specification

2N4126 Manufacturer

2N4126 Datasheet

Using Warnings

2N4126 FAQ

 

 

Video: Introduction to Bipolar Junction Transistor (BJT)

 

2N4126 Video Description: In this video, the Bipolar Junction Transistor, its different regions of operation, different configurations, and the working is briefly explained.

 

2N4126 Features

  • -80V Collector to base voltage (VCBO)
  • -5V Emitter to base voltage (VEBO)
  • 3°C/W Thermal resistance, junction to case
  • 200°C/W Thermal resistance, junction to ambient

 

2N4126 Pinout

The 2N4126 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.

Here is an image showing the pin diagram of the this transistor.

 

2N4126 Pinout

2N4126 Pinout

 

2N4126 Equivalents

You can replace the 2N4126 with the 2SA642, 2SB564A, BCX79, KSA642, KSB564A, MPS4126, MPS6535, MPS6651, MPS6651G, MPS6652, MPS6652G, MPS750, MPS750G, MPSW51, MPSW51A, MPSW51AG, MPSW51G or PN200.

 

2N4126 DC Current Gain

The following is the DC Current Gain of 2N4126.

 

2N4126 DC Current Gain

2N4126 DC Current Gain

 

2N4126 Package

The following diagram shows the 2N4126 package.

 

2N4126 Package

2N4126 Package

 

2N4126 Specification

TYPE DESCRIPTION
Category Transistors - Bipolar (BJT) - Single
Mfr NTE Electronics, Inc
Package Bag
Part Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 200 mA
Voltage - Collector Emitter Breakdown (Max) 25 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 1V
Power - Max 625 mW
Frequency - Transition 250MHz
Operating Temperature -55C ~ 150C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92

 

2N4126 Manufacturer

Fairchild is now part of onsemi together, we deliver a more extensive product portfolio of power discretes, ICs and power modules, plus a complete offering of low, mid and high voltage products across the entire voltage spectrum which means more choices for your designs. Together, we provide a stronger presence in the key markets of automotive, industrial and wireless, combined with increased technical and sales support.

 

2N4126 Datasheet

You can download 2N4126 datasheet from the link given below:

2N4126 Datasheet

 

Using Warnings

Note: Please check their parameters and pin configuration before replacing them in your circuit.

 

2N4126 FAQ

What does a bipolar transistor do?

A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between two other terminals, making the device capable of amplification or switching.

 

What is the bipolar transistor device?

A bipolar transistor is a semiconductor device commonly used for amplification. The device can amplify analog or digital signals. It can also switch DC or function as an oscillator. Physically, a bipolar transistor amplifies current, but it can be connected in circuits designed to amplify voltage or power.

 

What is the difference between a FET and a bipolar transistor?

The acronym of the BJT is Bipolar Junction Transistor and FET stands for Field Effect Transistor. The major difference between BJT and FET is that in a field-effect transistor only majority charge carries flows, whereas in BJT both majority and minority charge carriers flow.

 

What is BJT and its types?

BJTs are of two types namely NPN and PNP based on doping types of the three main terminals. An NPN transistor consists of two semiconductor junctions that have a thin p-doped anode region and PNP transistor also consists of two semiconductor junctions that have a thin n- doped cathode region.

 

Why BJT is called bipolar?

Bipolar transistors are a type of transistor composed of pn junctions, which are also called bipolar junction transistors (BJTs). Whereas a field-effect transistor is a unipolar device, a bipolar transistor is so named because its operation involves two kinds of charge carriers, holes and electrons.

 

2N4126 PCB Symbol, Footprint & 3D Model

JSCJ 2N4126

JSCJ

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