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- an 2018-02-01 in (General electronic semiconductor)
- GaN High-Electron Mobility Transistor Power Amplifier
- Warm hints: The word in this article is about 1000 and the reading time is about 6 minutes.SummaryFujitsu,a company that provide innovative IT services and digital technologies like mobile,AI,cl
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- an 2024-09-24 in (General electronic semiconductor)
- Role of Gallium Nitride HEMT Models in Enhancing Device Performance
- Overview: The article explores the limitations of silicon-based power devices and highlights gallium nitride as a promising alternative. It discusses the importance of accurate modeling for optimizing
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- an 2018-08-27 in (General electronic semiconductor)
- Switching Power Supply Tutorial: 4V～16V
- This paper introduces a switching power supply with the half-bridge circuit. Its input voltage is AC 220V ±20V, the output voltage is DC 4V ~16V, the maximum current is 40A, and the working fre
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- an 2018-09-06 in (General electronic semiconductor)
- Basic IGBT Tutorial: Short-circuit Protection and Driving Circuit
- The insulated gate bipolar transistor (hereinafter referred to as IGBT) is a composite device of MOSFET and GTR. Thus it has the advantages of MOSFET and GTR, it is an ideal switch device to replace G
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