ON Semiconductor FDMT800120DC

Brief Description: The FDMT800120DC is a high-power N-channel MOSFET from ON Semiconductor, designed for high-frequency and high-current applications. It features a PowerTrench technology and Dual Cool packaging, making it suitable for power management and switching applications.

Features:

• High-power N-channel MOSFET with PowerTrench technology
• Dual Cool packaging for improved thermal performance
• Continuous drain current (ID) of 129A
• Drain-to-source voltage (Vdss) of 120V
• Drive voltage (Max Rds On, Min Rds On) of 6V and 10V
• Gate-to-source voltage (Vgs) of ±20V
• Input capacitance (Ciss) of 7850pF at 60V
• Gate charge (Qg) of 107nC at 10V
• Fall time (Typ) of 9.5ns
• Rise time of 18ns
• Turn-on delay time of 29ns
• Turn-off delay time of 40ns
• Power dissipation (Max) of 3.2W at 156W
• Rds On (Max) of 4.14mΩ at 20A and 10V
• Operating temperature range of -55°C to 150°C

Application Grade: The FDMT800120DC is designed for high-power and high-frequency applications, making it suitable for:

• Power management and switching applications
• High-current and high-voltage applications
• Automotive and industrial applications requiring high reliability and performance

Applications:

• Power supplies and converters
• Motor control and drives
• Power distribution and switching
• Automotive and industrial applications requiring high-power and high-frequency performance
• High-reliability and high-performance applications requiring a robust and reliable power management solution.