Overview: The article discusses the SC robustness, surge energy, and overvoltage robustness of GaN HEMTs. Additionally, the article highlights recent achievements in ultrafast SC protection circuits and alternative circuit approaches. For many applications, including motor drives, automobile powertrains, and electric grids, the ability of power devices to stand up to overvoltage, overcurrent, and surge-energy events is a crucial need for robustness. For Si and SiC power transistors, UIS (avalanche) and SC tests are typically used to measure robustness. Does gallium nitride possess SC robustness? It is known that GaN HEMTs lack avalanche capabilities and have restricted SC robustness. Furthermore, compared to Si and SiC devices, GaN HEMTs behave considerably differently in terms of stress tolerance and failure under specific out-of-safe-operating area situations. The SC robustness, surge energy, and overvoltage robustness of GaN HEMTs will be discussed. Fig. 1 shows an illustration of GaN SP-HEMT and GaN HD-GIT.Fig. 1. Illustration of (a) GaN SP-HEMT and (b) GaN HD-GIT. Source: IEEE Transactions on Power Electronics SC Robustness When there is a conduction path with minimum resistance between the power source and the switching transistor, SC fault occurrences take place. SC events typically drive devices into saturation mode, which stresses the device with high voltage and high conduction current. Objectives Standard SC robustness criteria are:10 μs SC withstanding time (tSC) under the bus voltage (VBUS) The driving conditions must be identical to the application-use operation.Note: The U.S. Department of Energy 2025 Vehicle Drive Roadmap states that a 2 μs tSC of the power device along with the ultrafast protection circuit is required if the 10 μs tSC is not achievable. Types of SC Robustness In power electronics systems, there are typically four types of SC situations that can occur: Arm SC, also known as the hard-switching fault (HSF) or SC type ISeries arm SCOutput SCGround SCHSF is typically used in these situations to assess the robustness of the SC power device. The findings of repeated SC tests, failure modes, and single-event tSC for GaN HEMTs are compiled in this section. Reasons for Restricted SC in GaN HEMT A lot of work has been done to figure out what limits the SC capability of GaN HEMTs, especially when the bus voltage is high. Devices fail thermally in long SC duration tests with low bus voltage. At high bus voltages, several reports point to an electrical failure. It is suggested that the high electric field produced by the hole accumulation beneath the gate—where the holes are produced by impact ionization—may be the reason for the SC failure. The relationship between electric field crowding at the drain-side gate edge and the high carrier density caused by the SC has been reported. A wafer-level transient voltage measurement keeps track of the potential profile in the gate-drain region under SC stress. It is found that the failure is dependent on the speed at which the electric field propagates; impact ionization causes the failure when a high electric field reaches the drain edge. Results of Repetitive SC stresses on GaN HEMTs It has been documented that GaN HEMTs are not sufficiently robust to repetitive SC stresses within the single-event SC SOA. In SP-HEMTs, the repetitive SC stresses cause a decrease in drain-leakage currents and a rise in on-resistance (RDS,ON) at lower bus voltages. All of these parametric shifts point to the possibility of electron trapping during the repetitive SC operation in the buffer and gate areas. In HD-GIT repetitive SC tests, the progression of developing cracks and aluminum extrusion at this load has been seen.In cascode HEMT, two additional strategies have been identified to constrain the SC robustness The first thing that can happen is that the parasitics of the Si-GaN chip interconnection can cause the self-sustained gate oscillation to excite. This can make the GaN HEMT turn on by accident and fail. Secondly, the cascode HEMT's thermal self-regulation capability on the gate control is lower than that of HD-GITs and SP-HEMTsMethods to Overcome SC Faults Protection circuits must be included for applications where the SC fault may arise due to the short SC withstanding time of contemporary GaN HEMTs. Within 100–200 ns, the protection circuit should identify the issue and clear it. Conventional desaturation circuits have a long response time, which makes it difficult to achieve this. Ultrafast SC protection circuits for GaN HEMTs have recently been achieved by several groups. These circuits typically exhibit fault detection and clearance times of less than 100 ns. Some other good qualities that have been talked about are strong dv/dt noise immunity, use with parallel-connected GaN HEMTs, and monolithic integration with the GaN device. Alternative circuit approaches to improve the SC capability in addition to quick protection are also suggested, such as coupling the GaN HEMT to a Si mosfet.Device-level enhancements have also been reported to enhance the SC withstanding time of GaN devices, in addition to circuit techniques. Removing parts of the 2DEG channel along the width of the GaN HEMT is an easy way to minimize the saturation current. With this method, an SC withstanding time over 3 μs is possible in industrial cascode GaN HEMTs. Surge Energy Power devices would greatly benefit from the ruggedness against surge energy in addition to SC robustness. Si/SiC MOSFETs and IGBTs have relied on their avalanche ability—an impact ionization and multiplication effect—to support high current at high drain-to-source bias. Why is surge energy important for power devices? When devices are exposed to surge energy, drain-to-source bias quickly climbs to and clamps at avalanche breakdown voltage. Avalanching in the device causes the drain current to decrease to zero and the surge energy to be resistively dissipated. The dissipation of energy stops converters from circulating energy further. For this reason, avalanche ruggedness is another name for surge-energy ruggedness. An essential indicator of device robustness is avalanche energy, which is the maximum energy that a power device can dissipate without causing a thermal runway. Surge Energy in GaN HEMTS However, the intrinsic avalanche capacity is absent from GaN HEMTs. The JEDEC JC 70 committee has just identified their surge-energy robustness as a crucial evaluation problem. GaN HEMTs show a quick rise in drain-to-source bias when they are exposed to surge energy. This is because of the resonance between output capacitance and parasitic inductance in the circuit. This standing process cannot release energy until the resonance voltage drops, which causes the GaN HEMTs to turn on in reverse. The device's overvoltage margin is the principal cause of electrical failure in the withstand process. The convergence of overvoltage and surge-energy robustness for GaN HEMTs is demonstrated in the discussion above. GaN HEMTs can generally tolerate higher surge energies at the expense of slower switching speed when they are constructed with a larger output capacitance and a higher dynamic breakdown voltage. Any nonavalanche power device can be designed or chosen with this tradeoff in mind for a variety of applications. Summarizing the Key PointsUIS (avalanche) and SC tests are typically used to measure the robustness of Si and SiC power transistors. GaN HEMTs lack avalanche capabilities and have restricted SC robustness compared to Si and SiC devices. Standard SC robustness criteria include 10 μs SC withstanding time under the bus voltage and identical driving conditions to the application-use operation. Recent achievements in ultrafast SC protection circuits for GaN HEMTs and alternative circuit approaches have improved SC capability. And, device-level enhancements have been reported to enhance the SC withstand time of GaN devices.Surge energy, which is the maximum energy that a power device can dissipate without causing a thermal runway, is also important for power devices in addition to SC robustness since it is an essential indicator of device robustness.GaN HEMTs can generally tolerate higher surge energies at the expense of slower switching speed when they are constructed with a larger output capacitance and a higher dynamic breakdown voltage.ReferenceKozak, Joseph Peter, Ruizhe Zhang, Matthew Porter, Qihao Song, Jingcun Liu, Bixuan Wang, Rudy Wang, Wataru Saito, and Yuhao Zhang. “Stability, Reliability, and Robustness of GaN Power Devices: A Review.” IEEE Transactions on Power Electronics 38, no. 7 (July 2023): 8442–71. https://doi.org/10.1109/tpel.2023.3266365.
Rakesh Kumar, Ph.D. On 2023-10-13