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Introduction

RF power amplifier is an important part of various wireless transmitters. In the front-end circuit of the transmitter, the power of the RF signal generated by the modulation oscillator circuit is very small, and it needs to go through a series of amplification-buffer stage, intermediate amplification stage, and final power amplification stage to obtain enough RF power before feeding. In order to obtain a sufficiently large RF output power, a RF power amplifier must be used.

RF Power Amplifier Design: The Basics

Catalog

Introduction

Ⅰ Requirements of RF Power Amplifier

Ⅱ Types of Power Amplifier in Use

Ⅲ Parameters of RF Power Amplifier Design

Ⅳ Key Feature: Non-Linearity

4.1 Nonlinear Characteristics

4.2 Influence of Nonlinear Characteristics

Ⅴ FAQ

Ⅰ Requirements of RF Power Amplifier

With the vigorous development of modern digital mobile communication technology, users have more requirements on the performance of wireless communication equipment. To achieve stable and high-speed data transmission in various environments is one of the main goals of future mobile communication system researchers. The RF power amplifier is the last stage of the transmitter. It amplifies the modulated frequency band signal to the required power, ensuring that the receiver in the coverage area can receive a satisfactory signal level, but it cannot interfere too much with the communication of adjacent channels, and meanwhile try to keep the amplified high-power signal without distortion. The requirements of these different aspects make the users of power amplifiers have to consider many factors in all aspects. So you should get a full knowledge of RF power amplifiers.

Classic RF Power Amplifier Circuit

Figure 1. Classic RF Power Amplifier Circuit

Ⅱ Types of Power Amplifier in Use

What are the main types of RF amplifiers for such an important device?
1) According to the operating frequency bands
According to the working frequency band, it can be divided into narrowband RF power amplifier and broadband RF power amplifier. The former generally uses frequency selective networks as load circuits, such as LC resonant circuits. The latter does not use the frequency selection network as the load loop, but employs the transmission line with a wide frequency response as the load.
2) According to the network properties
According to the nature of the matching network, power amplifiers can be divided into non-resonant power amplifiers and resonant power amplifiers. The matching network of the non-resonant power amplifier is a non-resonant system, such as high-frequency transformers, transmission line transformers and other non-resonant systems, and its load properties are purely resistive, where this is also called reactance properties.
3) According to current conduction angle
Based on it, RF power amplifiers can be divided into class A, AB, B, C, D, E and so on. The differences between these categories can be seen in the following table:

Classification

Conduction Angle

Efficiency

Linearity

Application

Class A

Θ=360°

≤30%

Very good

Small Signal Low Power Amplification

Class B

Θ=180°

≤60%

Lower than class A

For High Power

Class C

Θ<180°

About 60%

Nonlinear amplifier

For High Power

Class AB

180°<Θ<360°

30%~60%

Better than class B

Small signal works in class A, large signal works in class B

Class D

Work in switch mode

80%

Very good, only good for low frequencies

Switch mode amplifier

Class E

Work in switch mode

90%

Completely nonlinear amp

Switch mode amplifier

In the classification of amplifiers, we often talk about amplifiers of class A to E according to the conduction angle. Class A power amplifier is a linear amplifier, its response to the sine-wave  input is a sine-wave output, generally without distortion amplification, and the output frequency is the same as the input frequency. Since class A amplifiers do not require additional filtering circuitry, their packages can be small and cost less. The output of a class B amplifier is a half sine wave of the input, resulting in half-wave distortion, which produces many harmonics. The output power and efficiency of the class C working state are the highest among these working states, and most of the amplifiers used for radio frequency work in the class C.

Class A Amplifier Load Curve

Figure 2. Class A Amplifier Load Curve

 

Ⅲ Parameters of RF Power Amplifier Design

RF power amplifiers are electronic circuits that comprehensively consider issues such as output power, excitation level, power consumption, distortion, efficiency, size and weight. In the transmitting system, the output power of the RF power amplifier can be as small as mW and as large as several kW, but this refers to the output power of the final power amplifier. In order to achieve high power output, the last stage must have a sufficiently high excitation power level. At the same time, it has other important indicators, as follows:
1) Operating Frequency
Generally speaking, it refers to the linear operating frequency range of the amplifier. If the frequency starts at DC, the amplifier is considered to be a DC amplifier.
2) Gain
The working gain is the main indicator to measure the amplification ability of the amplifier. Here it is defined as the ratio of the power delivered to the load by the amplifier output port to the power actually delivered by the signal source to the amplifier input port.
Gain flatness refers to the variation range of amplifier gain in the entire operating frequency band under a certain temperature, and is also a main indicator of the amplifier.

Output Power and 1dB Compression Point (P1dB)

Figure 3. Output Power and 1dB Compression Point (P1dB)

Referring to the Figure 3, when the input power exceeds a certain amount, the gain of the transistor begins to decrease, and the end result is that the output power saturates. When the gain of the amplifier deviates from a constant or is 1dB lower than other small signal gains, this point is the famous 1dB compression point (P1dB). Generally speaking, the power capacity of an amplifier is expressed by the 1dB compression point.
3) Efficient
Since the power amplifier is a power component, it needs to consume the supply current. Therefore, the efficiency of the power amplifier is extremely important to the efficiency of the whole system. Power efficiency is the ratio of the RF output power of the amplifier to the DC power supplied to the transistors.
ηp=RF Output Power/DC Input Power
4) Intermodulation Distortion (IMD)
Intermodulation distortion refers to the mixed components of two or more input signals with different frequencies passing through a power amplifier. This is due to the nonlinear nature of the amplifier. Among them, because the third-order intermodulation product is very close to the fundamental signal, it has the greatest influence, so the third-order intermodulation is the most important consideration for the related products. The lower the third-order intermodulation product, the better.
5) Third-order Intermodulation Cut-off Point (IP3)
The intersection point of the extension line of the fundamental wave signal output power and the extension line of the third-order intermodulation in Fig is called the third-order intermodulation cut-off point, which is represented by the symbol IP3. It is also an important indicator of nonlinearity. When the output power is constant, the greater the output power of the third-order intermodulation cut-off point, the better the linearity of the power amplifier.
6) Dynamic Range
The dynamic range of a power amplifier generally refers to the difference between the minimum detectable signal and the maximum input power in the linear operating region. Naturally, this value must be as large as possible.
7) Harmonic Distortion
When the input signal increases to a certain level, the power amplifier will generate a series of harmonics due to its work in the nonlinear region. For high-power amplifier systems, filters are generally required to reduce harmonics below 60dBc.
8) Input/Output VSWR (Voltage Standing Wave Ratio)
This is also a very important indicator of how well the amplifier matches the overall system. The deterioration of the input-output ratio will lead to the deterioration of the gain fluctuation and group delay of the system. However, it is difficult to design a power amplifier with a high VSWR. In general systems, the input VSWR of the power amplifier is required to be lower than 2:1.
The main technical indicators of RF power amplifiers are output power and efficiency. Therefore how to improve them is the core of the design goals of RF power amplifiers. Usually in the RF power amplifier, the fundamental frequency or a certain harmonic can be selected by the LC resonant circuit to achieve distortion-free amplification. In addition to this, the harmonic components in the output should be as small as possible to avoid interference with other channels.

Increase the Power of the RF Input Signal

Figure 4. Increase the Power of the RF Input Signal

Ⅳ Key Feature: Non-Linearity

In an ideal amplifier, the output signal should faithfully reflect the input signal, that is, the waveform should be the same. But in fact, for many reasons, the input signal cannot be exactly the same waveform as the input signal, which is called amplifier distortion.
Amplifier distortion mainly includes frequency distortion (linear distortion) and waveform distortion (non-linear distortion). The former mainly refers to the difference in gain and delay of the amplifier for different frequency components; the latter refers to the same frequency, the output signal and the input signal are not linear. Frequency distortion is represented by spectral changes in the frequency domain, while nonlinear distortion is represented by changes in the time-domain waveform. Non-linear distortion is different from frequency distortion mainly because a large number of new frequency components are generated. The nonlinear distortion of the power amplifier is mainly discussed here.

4.1 Nonlinear Characteristics

From the small-signal model and input characteristic curve of an ideal transistor, it can be seen that the transistor amplifier itself is not an ideal linear device, and at the same time, due to the influence of parasitic parameters, the linearity is further reduced. But within a certain power range, the transistor can be regarded as linear amplification. For power amplifier designers, how to obtain higher output power and improve linearity is the key.
For a transistor amplifier, its volt-ampere characteristics can be described as follows:

formula 1

A power series expansion can be used to describe the volt-ampere characteristics of the device:

formula

In the formula, an(n=0,1,2,3,…) is a coefficient related to the circuit characteristics. Usually, the larger the n, the smaller the value of the coefficient an. When the nonlinear device in the circuit is represented by a power series, the number of series terms taken depends entirely on the magnitude of the signal amplitude and the required precision.

4.2 Influence of Nonlinear Characteristics

The influence of the nonlinear characteristics of the device on the amplifier can be discussed in two cases. One is when there is only one signal at the input end, and the other is when the input end has one to two other signals in addition to the useful signal.
🔺Only one signal at the input
Let the signal at the input end be formula 3, and substitute it into formula 2, at this time there is

formula 4

When the amplitude of the input signal is large and the effect of the cubic term must be considered, the fundamental frequency signal obtained from formula 2 is:

formula 5

1dB Compression Point (PA)

Figure 5. 1dB Compression Point (PA)

A3 in formula 3 is usually a negative value, that is, y1(t) decreases as the input signal amplitude increases, a phenomenon called gain compression.
The "1dB compression point" is often used in engineering to measure the linear performance of the device. The 1dB compression point is defined as the input signal power P1dB that reduces the gain by 1dB from the linear gain. As shown in Figure 5. According to the definition of 1dB compression point and formula 3, we can get

formula 6

🔺Two signals at the input.
The signal amplified at the input end of the amplifier is generally not a single tone signal, but a spectral signal composed of a certain bandwidth. Due to the nonlinearity of the device, a large number of combined interference frequency components other than the useful signal will be generated at the output end. In addition, the combined frequency components of two or more interfering signals may also cause interference to the useful signal. Have an assumption:

formula 7

Substitute into formula 1, where

formula 8

It can be seen from the above formula that the fundamental frequency components of ω1 and ω2 are generated by the first and third power terms:

formula 9

A total of multiple frequency components are generated: ω1 , ω2 , ω1 ± ω2, 2ω1 - ω2, 2ω2 - ω1 , 3ω1 - 2ω2, 3ω2 - 2ω1.
The difference frequency 2ω1 - ω2, 2ω2 - ω1 in the combined frequency is generated by the cubic term. The combination of these two signal frequencies is just within the sideband range of the signal frequency, which may cause interference to adjacent channels, and is one of the main indicators of transmission signal.

Intermodulation Signal Interference

Figure 6. Intermodulation Signal Interference

This interference is caused by the mutual modulation of the two signals, so it is called intermodulation interference. At the same time, it is generated by a cubic term, so it is also called third-order intermodulation interference in engineering.
When the third-order intermodulation interference is an important indicator of the communication machine, it is often measured by the intermodulation distortion ratio IMR and the third-order intermodulation blocking point IP3 in engineering. IMR is defined as the ratio of the amplitude of the third-order intermodulation product to the amplitude of the fundamental signal at a certain input amplitude. Definition of IP3: When the third-order intermodulation component increases to be equal to the fundamental frequency component, the receiver cannot receive normally, so there is a formula 10.

Third-order Intermodulation Blocking Point

Figure 7. Third-order Intermodulation Blocking Point

🔺Sideband Signals

Sideband Signals and the Spectrum

Figure 8. Sideband Signals and the Spectrum

In fact, most of the sideband signals are generated outside the bandwidth after the useful signals of different frequencies within the bandwidth are modulated with each other. That is, the sideband signal rises faster than the in-band signal, and the spectral mask in the above figure becomes more and more flat. The increase of sideband signals will cause interference to adjacent channels, so the IEEE 802.11 protocol has strict requirements on the spectrum template, as shown in the Figure 9.

DSSS Signal Modulation Spectral Mask

Figure 9. DSSS Signal Modulation Spectral Mask

OFDM 20MHz Bandwidth Signal Spectral Mask

Figure 10. OFDM 20MHz Bandwidth Signal Spectral Mask

For the power amplifier, its nonlinear characteristics will increase the sideband of the modulated signal, and the sideband amplitude is not easily suppressed by other networks such as filters, and it is easy to cause design difficulties. Therefore, when choosing a PA, not only should pay attention to the maximum linear output that it can achieve, but also whether it can meet the sideband spectrum requirements at this output power.
🔺Other Effects of Nonlinearity
In addition to the previously mentioned gain drop, which generates a large number of harmonic components, as well as third-order intermodulation and sidebands, nonlinearity can also cause signal and EVM to deteriorate, etc.

 

Ⅴ FAQ

1. What is RF power amplifier?
A radio frequency power amplifier (RF power amplifier) is a type of electronic amplifier that converts a low-power radio-frequency signal into a higher power signal.

2. How does RF power amplifier work?
An RF amplifier is actually a tuned amplifier that enables the input signal of broadcast or transmitted information to control an output signal. The RF amplifier uses frequency-determining networks to convert the input signal into an output signal that will provide the required response at a given frequency.

3. What is the most efficient class of RF power amplifier?
Class C Amplifier
The Class C Amplifier design has the greatest efficiency but the poorest linearity of the classes of amplifiers mentioned here. The previous classes, A, B and AB are considered linear amplifiers, as the output signals amplitude and phase are linearly related to the input signals amplitude and phase.

4. How do I choose an RF power amplifier?
Considerations When Choosing An RF Power Amplifier:
Gain.
Operating Frequency.
Output Power Level.
Efficiency.
Linearity.
Mismatch Tolerance.
Noise Level.

5. What are the advantages of RF amplifier?
Following are the RF Amplifier advantages:
The RF amplifier offers greater gain i.e. better sensitivity. 
It offers better selectivity and hence it has ability to select wanted signals from multiple input signals at the RF receiver.

6. What are the different types of RF amplifiers?
Amplifier Types
Broadband Amplifiers
Gain Block Amplifiers
Log Amplifiers
Variable Gain Amplifiers
Low Noise Amplifiers
Coaxial and Waveguide Power Amplifiers
Linear Amplifiers
Bi-Directional Amplifiers

7. What is RF amplifier circuit?
A radio frequency power amplifier (RF power amplifier) is a type of electronic circuit that converts a low-power radio-frequency signal into a higher power signal.

8. Is Class D amplifier better than a class AB?
The most common audio power amplifier operates in the Class-AB mode. It provides the greatest amount of output power with the least amount of distortion. ... Class-D amplifiers are switches that are more efficient and produce less heat than their Class-AB equivalents.

9. What are RF amplifiers used for?
Whenever people need to magnify a radio frequency signal into a higher power signal, the RF amplifier plays a pivotal role. They are used in commercial and defense avionics, space and deep space, electronic warfare, naval applications, mobile internet, satellite communication, and wireless communications.

10. Which amplifier is used in RF amplifier?
RF power amplifiers using LDMOS (laterally diffused MOSFET) are the most widely used power semiconductor devices in wireless telecommunication networks, particularly mobile networks. LDMOS-based RF power amplifiers are widely used in digital mobile networks such as 2G, 3G, and 4G.

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