ON Semiconductor FDP3205

Brief Description: The FDP3205 is a N-Channel PowerTrench MOSFET from Rochester Electronics, LLC. It is a single-element, single-channel device with a built-in diode, designed for switching applications.

Features:

• Vgs(th) (Max) @ Id: 5.5V @ 250μA
• Vgs (Max): ±20V
• Rds On (Max) @ Id, Vgs: 7.5mΩ @ 59A, 10V
• Pulsed Drain Current-Max (IDM): 390A
• Power Dissipation (Max): 150W Tc
• Operating Temperature: -55°C ~ 175°C TJ
• Operating Mode: Enhancement Mode
• FET Type: N-Channel
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Drain-source On Resistance-Max: 0.0075Ω
• Drain to Source Voltage (Vdss): 55V
• Drain Current-Max (Abs) (ID): 100A
• DS Breakdown Voltage-Min: 55V
• Current - Continuous Drain (Id) @ 25℃: 100A Tc
• Avalanche Energy Rating (Eas): 365 mJ

Application Grade: The FDP3205 is a commercial-grade device, suitable for general-purpose applications.

Applications: The FDP3205 is designed for switching applications, including:

• Power supplies
• Motor control
• Lighting systems
• Automotive applications
• Industrial control systems

Additional Information:

• The device is packaged in a TO-220-3 tube, with a pin count of 3.
• It is not surface-mountable and is designed for through-hole mounting.
• The device is RoHS3 compliant and has an MSL rating of 1 (unlimited).
• The JESD-30 code is R-PSFM-T3, and the JEDEC-95 code is TO-220AB.