ON Semiconductor IRFU220BTU_F080

Brief Description: The IRFU220BTU_F080 is an N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from ON Semiconductor, designed for high-frequency and high-power applications. It features a TO-251-3 Short Leads package and is packaged in a tube.

Features:

• N-Channel MOSFET with a maximum drain-to-source voltage (Vdss) of 200V
• Maximum continuous drain current (Id) of 4.6A at 25°C
• Maximum power dissipation of 2.5W at 40°C
• Maximum Rds On (resistance) of 800mOhm at 2.3A and 10V
• Gate charge (Qg) of 16nC at 10V
• Input capacitance (Ciss) of 390pF at 25V
• Operating temperature range of -55°C to 150°C
• Drive voltage (Max Rds On, Min Rds On) of 10V
• Vgs (maximum gate-to-source voltage) of ±30V
• Vgs(th) (maximum threshold voltage) of 4V at 250μA

Application Grade: The IRFU220BTU_F080 is designed for high-frequency and high-power applications, making it suitable for use in power supplies, motor control, and other high-power applications.

Applications:

• Power supplies
• Motor control
• High-power switching
• High-frequency switching
• Automotive applications
• Industrial applications

Additional Information:

• The part is obsolete, meaning it is no longer in production and may be difficult to find or purchase.
• The part is rated for through-hole mounting, making it suitable for use in PCBs with limited space.
• The part has a moisture sensitivity level (MSL) of 1, indicating that it is not sensitive to moisture and can be used in environments with high humidity.
• The part is packaged in a tube, which may make it more difficult to handle and store compared to other packaging options.