ON Semiconductor FQPF2N30

Brief Description: The FQPF2N30 is a single N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from Rochester Electronics, LLC. It is a through-hole packaged device with a TO-220-3 full pack case, designed for switching applications.

Features:

• N-channel MOSFET with built-in diode
• Avalanche energy rating of 100 mJ
• Continuous drain current of 1.34A at 25°C
• Breakdown voltage of 300V
• Drain-to-source voltage of 300V
• Drive voltage of 10V
• Gate charge of 5nC at 10V
• Input capacitance of 130pF at 25V
• Operating temperature range of -55°C to 150°C
• Power dissipation of 16W
• Pulsed drain current of 5.36A
• Rds On of 3.7Ω at 670mA and 10V
• Vgs of ±30V
• Vgs(th) of 5V at 250μA

Application Grade: The FQPF2N30 is a commercial-grade device, suitable for general-purpose switching applications.

Applications: The FQPF2N30 is designed for use in a variety of applications, including:

• Power switching
• Motor control
• Power supplies
• Lighting control
• Automotive electronics
• Industrial control systems

This device is suitable for applications requiring high power handling, high voltage, and high current capabilities. Its built-in diode and avalanche energy rating make it a reliable choice for switching applications.