ON Semiconductor IRL510A

Brief Description: The IRL510A is a N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is a single, discrete transistor designed for high-power applications.

Features:

• N-Channel MOSFET with a maximum gate-source voltage (Vgs) of ±20V
• Maximum drain-source resistance (Rds(on)) of 440mOhm at 2.8A and 5V
• Power dissipation of 37W at a maximum temperature of 175°C
• Operating temperature range of -55°C to 175°C
• Through-hole mounting type
• Moisture sensitivity level (MSL) of 1 (unlimited)
• Input capacitance (Ciss) of 235pF at 25V
• Gate charge (Qg) of 8nC at 5V
• Drive voltage of 5V for maximum and minimum Rds(on)

Application Grade: The IRL510A is designed for high-power applications, making it suitable for use in power supplies, motor control, and other high-current applications.

Applications:

• Power supplies
• Motor control
• High-current applications
• Switching power supplies
• DC-DC converters
• Power amplifiers
• High-power switching applications

Overall, the IRL510A is a high-power N-Channel MOSFET with a wide range of features and applications. Its high power dissipation and operating temperature range make it suitable for use in high-power applications, while its through-hole mounting type and moisture sensitivity level of 1 (unlimited) make it easy to integrate into a variety of designs.