ON Semiconductor NTB60N06LT4

Brief Description: The NTB60N06LT4 is a N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from ON Semiconductor. It is a single-element, surface-mountable device designed for switching applications.

Features:

• N-Channel MOSFET with a maximum drain-source breakdown voltage of 60V
• Maximum continuous drain current of 60A
• Low on-resistance of 0.016 Ohm
• Logic-level compatible, with a maximum gate-source voltage of ±15V
• Avalanche energy rating of 454mJ
• Surface-mount package (TO-263-3, D2Pak) with a pin count of 3
• Operating temperature range of -55°C to 175°C (TJ)

Application Grade: The NTB60N06LT4 is designed for high-power switching applications, such as motor control, power supplies, and LED lighting.

Applications:

• Motor control
• Power supplies
• LED lighting
• Switching power supplies
• High-power switching applications

Key Parameters:

• Drain-source breakdown voltage: 60V
• Maximum continuous drain current: 60A
• On-resistance: 0.016 Ohm
• Gate-source voltage: ±15V
• Avalanche energy rating: 454mJ
• Operating temperature range: -55°C to 175°C (TJ)
• Package: TO-263-3, D2Pak
• Pin count: 3

Additional Notes:

• The NTB60N06LT4 is obsolete and no longer in production.
• It is not RoHS compliant and contains lead.
• The device has a maximum power dissipation of 2.4W (Ta) and 150W (Tj).
• The device has a maximum peak reflow temperature of 240°C.