STMicroelectronics STD8NM60N-1

Brief Description: The STD8NM60N-1 is a single N-Channel MOSFET from STMicroelectronics, designed for switching applications. It features an avalanche rating and is rated for a maximum drain-source breakdown voltage of 600V.

Features:

• Avalanche rated for 200mJ energy
• N-Channel MOSFET with a maximum drain-source breakdown voltage of 600V
• Continuous drain current of 3.5A and peak pulsed drain current of 28A
• Drain-source on resistance of 0.65Ω
• Operating temperature range of -55°C to 150°C
• Power dissipation of 70W
• Through-hole mounting with a TO-251-3 package
• RoHS3 compliant and Pb-free

Application Grade: The STD8NM60N-1 is designed for high-power switching applications, making it suitable for use in power supplies, motor drives, and other high-power applications.

Applications:

• Power supplies
• Motor drives
• High-power switching applications
• Industrial control systems
• Automotive applications

Key Information:

• Part number: STD8NM60N-1
• Manufacturer: STMicroelectronics
• Package: TO-251-3 Short Leads, IPak, TO-251AA
• Mounting type: Through-hole
• Power dissipation: 70W
• Drain-source breakdown voltage: 600V
• Continuous drain current: 3.5A
• Peak pulsed drain current: 28A
• Drain-source on resistance: 0.65Ω
• Operating temperature range: -55°C to 150°C
• RoHS3 compliant and Pb-free