Infineon Technologies IRFIZ24E

Brief Description: The IRFIZ24E is a N-Channel Enhancement Mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from Infineon Technologies. It is a high-reliability device with a TO-220-3 full pack package and is designed for switching applications.

Features:

• High-reliability device with a TO-220-3 full pack package
• N-Channel Enhancement Mode MOSFET
• Operating temperature range: -55°C to 175°C
• Power dissipation: 29W
• Peak pulsed drain current: 68A
• Rds(on) max: 71mΩ
• Vgs(max): ±20V
• Vgs(th) max: 4V at 250μA
• Avalanche energy rating: 71mJ
• Gate charge: 20nC at 10V
• Input capacitance: 370pF at 25V
• Drive voltage: 10V
• Terminal finish: Matte Tin (Sn) with Nickel (Ni) barrier
• Mounting type: Through Hole
• Packaging: Tube

Application Grade: The IRFIZ24E is designed for high-reliability switching applications, making it suitable for use in industrial, commercial, and automotive applications.

Applications:

• Switching applications in industrial, commercial, and automotive environments
• High-reliability applications requiring a high-power, high-reliability MOSFET
• Applications requiring a high-temperature operating range (-55°C to 175°C)
• Applications requiring a high-power dissipation (29W)
• Applications requiring a high-peak pulsed drain current (68A)
• Applications requiring a high-Rds(on) (71mΩ)

Note: The IRFIZ24E is an obsolete part and is not qualified for use in new designs.