STMicroelectronics STDLED623

Brief Description: The STDLED623 is a N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from STMicroelectronics. It is a single-channel, surface-mountable device with a TO-252-3 package (DPak) and is designed for high-power applications.

Features:

• N-Channel MOSFET with a maximum gate-source voltage (Vgs) of ±30V
• Maximum drain-source breakdown voltage (Vds) of 620V
• Maximum continuous drain current (Id) of 3A at 25°C
• Maximum power dissipation (Pd) of 45W at 150°C
• Rise time of 4.4ns and fall time of 22ns
• Turn-on delay time of 8ns and turn-off delay time of 21ns
• Maximum on-resistance (Rds(on)) of 3.6Ω at 1.1A and 10V
• Input capacitance (Ciss) of 350pF at 50V
• Gate charge (Qg) of 15.5nC at 10V

Application Grade: The STDLED623 is designed for high-power applications, such as power supplies, motor drives, and power converters.

Applications:

• Power supplies
• Motor drives
• Power converters
• High-power switching applications
• High-voltage and high-current applications

Key Information:

• Part number: STDLED623
• Manufacturer: STMicroelectronics
• Package: TO-252-3 (DPak)
• Mounting type: Surface mount
• Number of pins: 3
• Number of channels: 1
• Operating temperature: 150°C (TJ)
• Power dissipation: 45W (Tc)
• Continuous drain current: 3A (Id)
• Maximum gate-source voltage: ±30V
• Maximum drain-source breakdown voltage: 620V
• Maximum on-resistance: 3.6Ω at 1.1A and 10V
• Rise time: 4.4ns
• Fall time: 22ns
• Turn-on delay time: 8ns
• Turn-off delay time: 21ns
• Input capacitance: 350pF at 50V
• Gate charge: 15.5nC at 10V