ON Semiconductor 2N7002LT7G

Brief Description: The 2N7002LT7G is a single N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a built-in diode, designed for surface-mount applications. It operates in enhancement mode and has a maximum drain current of 115mA.

Features:

• N-channel MOSFET with built-in diode
• Enhancement mode operation
• Maximum drain current: 115mA
• Maximum drain-to-source voltage: 60V
• Maximum power dissipation: 225mW
• Rds(on) maximum: 7.5Ω at 500mA, 10V
• Operating temperature range: -55°C to 150°C
• Surface-mount package: TO-236-3, SC-59, SOT-23-3
• RoHS3 compliant
• Pb-free

Application Grade: The 2N7002LT7G is suitable for general-purpose applications, including:

• Switching and amplification
• Power control
• Signal processing
• Automotive and industrial applications

Applications:

• Switching and amplification circuits
• Power control systems
• Signal processing and conditioning
• Automotive and industrial applications, such as:
  • Ignition systems
  • Fuel injection systems
  • Power windows and sunroofs
  • Industrial automation and control systems

Note: The above information is based on the provided product parameters and is intended to provide a general overview of the product''s features and applications. For specific design and application requirements, please refer to the manufacturer''s datasheet and application notes.