STMicroelectronics STF26N65DM2

Brief Description: The STF26N65DM2 is a N-Channel MOSFET from STMicroelectronics, designed for high-power and high-voltage applications. It features a maximum continuous drain current of 20A and a maximum drain-to-source voltage of 650V.

Features:

• N-Channel MOSFET with a maximum continuous drain current of 20A
• Maximum drain-to-source voltage of 650V
• Maximum drive voltage of 10V
• Gate charge (Qg) of 35.5nC at 10V
• Input capacitance (Ciss) of 1480pF at 100V
• Power dissipation of 30W at 25°C
• Rds On (maximum) of 190mΩ at 10A and 10V
• Operating temperature range of -55°C to 150°C
• Through-hole mounting type
• TO-220-3 full pack package

Application Grade: The STF26N65DM2 is designed for high-power and high-voltage applications, making it suitable for use in:

• Power supplies and converters
• Motor drives and control systems
• Power distribution and transmission systems
• Industrial automation and control systems
• Renewable energy systems

Applications:

• Power switching and control
• High-voltage and high-power applications
• Motor control and drives
• Power distribution and transmission systems
• Industrial automation and control systems
• Renewable energy systems

Overall, the STF26N65DM2 is a high-performance N-Channel MOSFET designed for demanding power electronics applications, offering high power handling, high voltage tolerance, and reliable operation in harsh environments.