ROHM Semiconductor RF4C100BCTCR

Brief Description: The RF4C100BCTCR is a single P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a built-in diode, manufactured by ROHM Semiconductor. It is designed for surface mount applications and has a high power dissipation of 2W.

Features:

• P-channel MOSFET configuration with a built-in diode
• High current capability: 10A continuous drain current
• High voltage rating: 20V breakdown voltage, 20V drain-to-source voltage
• Low on-resistance: 0.02Ω maximum drain-source on-resistance
• High switching speed: 23.5nC gate charge
• High temperature operation: 150°C maximum operating temperature
• Surface mount package: 8-Power UDFN (Underfilled Dual Flat No-lead) package
• RoHS3 compliant

Application Grade: The RF4C100BCTCR is designed for high-power switching applications, making it suitable for use in power supplies, motor control, and other high-current applications.

Applications:

• Power supplies
• Motor control
• High-current switching applications
• Automotive electronics
• Industrial control systems
• Aerospace and defense applications

Note: The RF4C100BCTCR is a high-power MOSFET with a built-in diode, making it suitable for applications where high current and high voltage are required. Its high temperature operation and low on-resistance make it an attractive option for power switching applications.