ON Semiconductor FDMS86368-F085

Brief Description: The FDMS86368-F085 is an N-channel power MOSFET from ON Semiconductor, designed for switching applications. It features a PowerTrench technology and is compliant with AEC-Q101 and ROHS3 standards.

Features:

• N-channel power MOSFET with a maximum gate charge (Qg) of 75nC at 10V
• Input capacitance (Ciss) of 4350pF at 40V
• Operating temperature range of -55°C to 175°C
• Peak reflow temperature of 260°C
• Power dissipation of 214W at 25°C
• Maximum drain-source on resistance (Rds(on)) of 0.0045Ω at 80A and 10V
• Maximum drain current (ID) of 80A
• Maximum drain-source voltage (Vdss) of 80V
• Configuration: Single with built-in diode
• Case connection: Drain
• Avalanche energy rating (Eas) of 82mJ

Application Grade: The FDMS86368-F085 is designed for automotive applications and is compliant with AEC-Q101 standards.

Applications:

• Switching applications in automotive systems
• Power management in industrial and consumer electronics
• High-current switching in power supplies and converters
• Load switching in motor control applications
• High-voltage switching in power distribution systems

Note: The product is available in a 8-PowerTDFN package and is packaged in tape and reel (TR) format. The manufacturer's lead time is 5 weeks, and the product is RoHS3 compliant.