ON Semiconductor EFC4618R-P-TR

Brief Description: The EFC4618R-P-TR is a dual N-channel common drain MOSFET array from ON Semiconductor, designed for logic-level gate applications. It features a 2.5V drive and operates at a maximum temperature of 150°C.

Features:

• Dual N-channel common drain MOSFET array
• Logic-level gate with 2.5V drive
• Maximum power dissipation: 1.6W
• Operating temperature: 150°C TJ
• Lead-free and RoHS compliant
• Surface mount package (4-XBGA, 4-FCBGA)
• Tape & Reel (TR) packaging
• Pin count: 4
• Terminal finish: Tin/Silver/Copper (Sn/Ag/Cu)

Application Grade: The EFC4618R-P-TR is suitable for high-temperature and high-voltage applications, making it ideal for use in automotive, industrial, and aerospace systems.

Applications:

• High-temperature and high-voltage switching
• Logic-level gate applications
• Automotive systems
• Industrial control systems
• Aerospace and defense systems
• Power management and conversion applications

Key Specifications:

• Fall time: 1.77 μs
• Gate charge (Qg): 25.4nC @ 4.5V
• Gate to source voltage (Vgs): 12V
• Rise time: 815ns
• Turn off delay time: 1.84 μs
• Turn on delay time: 200 ns

Additional Information:

• The EFC4618R-P-TR is obsolete and no longer in production.
• It is not radiation-hardened.
• The JESD-609 code is e1, indicating that it is suitable for use in electronic systems that require high reliability and low noise.