STMicroelectronics STD11N60M2-EP

Product Brief Description:

The STD11N60M2-EP is a N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from STMicroelectronics, designed for high-power switching applications. It features a high drain-to-source voltage of 600V and a maximum current rating of 7.5A.

Features:

• High drain-to-source voltage (Vdss) of 600V
• Maximum current rating of 7.5A
• N-Channel MOSFET with a maximum gate charge (Qg) of 12.4nC
• Input capacitance (Ciss) of 390pF
• Operating temperature range of -55°C to 150°C
• Power dissipation of 85W
• Maximum Rds On of 595mΩ at 3.75A and 10V
• Drive voltage of 10V
• RoHS3 compliant
• MSL level 1 (unlimited)

Application Grade:

The STD11N60M2-EP is designed for high-power switching applications, such as:

• Motor control
• Power supplies
• Lighting systems
• Renewable energy systems

Applications:

• High-power switching circuits
• Motor control systems
• Power supplies for industrial and commercial applications
• Lighting systems for residential and commercial buildings
• Renewable energy systems, such as solar and wind power inverters
• High-voltage power conversion circuits

Overall, the STD11N60M2-EP is a high-power N-Channel MOSFET designed for demanding applications that require high voltage and current ratings, as well as high efficiency and reliability.