STMicroelectronics BD435

Brief Description: The BD435 is a NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is a single transistor with a TO-225AA package and is designed for through-hole mounting.

Features:

• Voltage rating: 32V (DC) and 32V (Collector-Emitter Breakdown)
• Power dissipation: 36W
• Current rating: 4A (Collector)
• Frequency: 3MHz (Transition)
• Emitter-Base voltage: 5V
• DC current gain (hFE): 85 (minimum) at 500mA and 1V
• Collector-Emitter voltage: 500mV
• Collector-Base voltage: 32V
• Moisture sensitivity level: 1 (Unlimited)

Application Grade: The BD435 is designed for general-purpose applications, including audio, power, and signal amplification.

Applications:

• Audio amplifiers
• Power amplifiers
• Signal amplifiers
• Switching applications
• General-purpose applications

Key Information:

• Voltage rating: 32V (DC) and 32V (Collector-Emitter Breakdown)
• Power dissipation: 36W
• Current rating: 4A (Collector)
• Frequency: 3MHz (Transition)
• Emitter-Base voltage: 5V
• DC current gain (hFE): 85 (minimum) at 500mA and 1V
• Collector-Emitter voltage: 500mV
• Collector-Base voltage: 32V
• Moisture sensitivity level: 1 (Unlimited)

Note: The BD435 is obsolete and no longer in production. It is recommended to use alternative products for new designs.