STMicroelectronics ST83003

Brief Description: The ST83003 is a NPN bipolar junction transistor (BJT) from STMicroelectronics, designed for switching applications. It features a high collector-base voltage (VCBO) of 700V and a high collector-emitter breakdown voltage (VCEO) of 400V.

Features:

• High collector-base voltage (VCBO): 700V
• High collector-emitter breakdown voltage (VCEO): 400V
• High current gain (hFE): 16 (min) at 350mA, 5V
• High power dissipation: 40W
• High maximum operating temperature: 150°C
• Low minimum operating temperature: -65°C
• Lead-free and RoHS3 compliant
• Matte tin (Sn) terminal finish
• Through-hole mounting

Application Grade: The ST83003 is designed for switching applications, making it suitable for use in a variety of electronic systems, including:

• Power supplies
• Motor control
• Lighting systems
• Industrial automation
• Consumer electronics

Applications:

• Switching applications requiring high voltage and current
• Power supplies and inverters
• Motor control systems
• Lighting systems and ballasts
• Industrial automation and control systems
• Consumer electronics and appliances

Overall, the ST83003 is a robust and reliable NPN BJT that can handle high voltage and current requirements, making it an excellent choice for a wide range of switching applications.