ON Semiconductor MJ14001G

Brief Description: The MJ14001G is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is a single-element transistor with a TO-204AE package and is designed for switching applications.

Features:

• Collector-base voltage (VCBO): 60V
• Collector-emitter breakdown voltage: 60V
• Collector-emitter saturation voltage: 1V
• Collector-emitter voltage (VCEO): 3V
• DC current gain (hFE) (min): 15 at 50A, 3V
• Maximum collector current: 60A
• Maximum power dissipation: 300W
• Operating temperature: -65°C to 200°C (TJ)
• Package: TO-204AE (through-hole)
• Polarity/Channel Type: PNP
• Transistor application: Switching
• Transistor element material: Silicon

Application Grade: The MJ14001G is designed for high-power switching applications, making it suitable for use in power supplies, motor control, and other high-current applications.

Applications:

• Power supplies
• Motor control
• High-current switching applications
• Industrial control systems
• Automotive applications (e.g., ignition systems, power windows)
• Aerospace and defense applications (e.g., avionics, radar systems)

Note: The MJ14001G is an obsolete part, which means it is no longer being manufactured or supported by the manufacturer. However, it may still be available from distributors or through secondary markets.