ON Semiconductor BC849BLT3

Brief Description: The BC849BLT3 is a surface-mount NPN bipolar junction transistor (BJT) from ON Semiconductor. It is a single-element device with a collector-base voltage of 30V and a collector-emitter breakdown voltage of 30V. The transistor has a high current gain and a high frequency response, making it suitable for a variety of applications.

Features:

• Collector-base voltage: 30V
• Collector-emitter breakdown voltage: 30V
• Collector-emitter saturation voltage: 600mV
• Current rating: 100mA
• DC current gain (hFE): 200 (minimum) at 2mA and 5V
• Gain bandwidth product: 100MHz
• Operating temperature: -55°C to 150°C (TJ)
• Maximum power dissipation: 300mW
• Mounting type: surface mount (TO-236-3, SC-59, SOT-23-3)
• Terminal finish: tin/lead (Sn/Pb)
• Terminal form: gull wing
• Terminal position: dual

Application Grade: The BC849BLT3 is a general-purpose transistor suitable for a wide range of applications, including:

• Low-power amplifiers
• Switching applications
• Driver circuits
• Power supplies

Applications:

• Automotive electronics
• Industrial control systems
• Consumer electronics
• Communications equipment
• Medical devices

Note: The BC849BLT3 is an obsolete part and is no longer recommended for new designs.