ON Semiconductor BC856ALT3

Brief Description: The BC856ALT3 is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is a single-element, dual-terminal device with a Gull Wing terminal form and a Tin/Lead (Sn/Pb) finish. The transistor is designed for surface mount applications and has a maximum power dissipation of 300mW.

Features:

• Collector-base voltage (VCBO): -80V
• Collector-emitter breakdown voltage: 65V
• Collector-emitter saturation voltage: -650mV
• Current-collector (Ic) (max): 100mA
• Current-collector cutoff (max): 15nA (ICBO)
• DC current gain (hFE) (min) @ Ic, Vce: 125 @ 2mA, 5V
• Transition frequency: 100MHz
• Gain bandwidth product: 100MHz
• Emitter-base voltage (VEBO): 5V

Application Grade: The BC856ALT3 is designed for general-purpose applications, including audio amplifiers, power supplies, and other low-power circuits.

Applications:

• Audio amplifiers
• Power supplies
• Low-power circuits
• General-purpose applications

Additional Information:

• The transistor is not RoHS compliant and contains lead.
• It has a maximum peak reflow temperature of 240°C and a maximum operating temperature range of -55°C to 150°C (TJ).
• The packaging is a tape and reel (TR) with a TO-236-3, SC-59, or SOT-23-3 package.
• The transistor is not qualified and is obsolete.