ON Semiconductor BC327RL1

Brief Description: The BC327RL1 is a PNP bipolar junction transistor (BJT) from ON Semiconductor, designed for general-purpose applications. It is a single-element configuration with a TO-226-3 or TO-92-3 package.

Features:

• PNP transistor with a maximum collector current of 800mA
• Collector-base voltage (VCBO) of -50V and collector-emitter breakdown voltage (VCEO) of 45V
• Collector-emitter saturation voltage (VCE(sat)) of 700mV
• DC current gain (hFE) of 100 at 100mA and 1V
• Gain bandwidth product of 260MHz
• Operating temperature range of -55°C to 150°C (TJ)
• Maximum power dissipation of 625mW
• Through-hole mounting with a 3-pin package

Application Grade: The BC327RL1 is a general-purpose transistor suitable for a wide range of applications, including:

• Low-power amplifiers
• Switching circuits
• Driver circuits
• Power supplies

Applications:

• Audio amplifiers
• Power supplies
• Motor control circuits
• Industrial control systems
• Automotive applications

Key Information:

• Collector current: 800mA
• Collector-emitter voltage: 45V
• Collector-base voltage: -50V
• DC current gain: 100
• Gain bandwidth product: 260MHz
• Operating temperature range: -55°C to 150°C
• Package: TO-226-3 or TO-92-3
• Mounting type: Through-hole
• Pin count: 3

Note: The BC327RL1 is an obsolete part and is no longer available for new designs.