STMicroelectronics BUT11A

Brief Description: The BUT11A is a NPN bipolar junction transistor (BJT) from ON Semiconductor, designed for switching applications. It features a high collector-base voltage of 1kV and a high collector-emitter breakdown voltage of 450V, making it suitable for high-voltage and high-power applications.

Features:

• High collector-base voltage (VCBO): 1kV
• High collector-emitter breakdown voltage (VCEO): 450V
• High current rating: 5A
• High power dissipation: 100W
• High DC current gain (hFE): 10
• Low collector-emitter saturation voltage (VCE(sat)): 1.5V
• Lead-free and RoHS3 compliant
• Radiation-hardening not required
• Operating temperature: 150°C TJ
• Mounting type: Through-hole
• Package: TO-220-3

Application Grade: The BUT11A is designed for high-power and high-voltage switching applications, making it suitable for use in power supplies, motor controls, and other high-power applications.

Applications:

• Power supplies
• Motor controls
• High-power switching applications
• High-voltage switching applications
• Industrial control systems
• Automotive applications (e.g., power windows, power seats)

Overall, the BUT11A is a high-performance NPN bipolar junction transistor that offers high voltage and current ratings, making it an ideal choice for high-power and high-voltage switching applications.