ON Semiconductor FPN430A

Brief Description: The FPN430A is a PNP bipolar junction transistor (BJT) from ON Semiconductor, designed for general-purpose applications. It has a maximum collector-emitter breakdown voltage of 30V and a maximum power dissipation of 1W.

Features:

• PNP transistor type
• Maximum collector-emitter breakdown voltage: 30V
• Maximum power dissipation: 1W
• Maximum collector current: 2A
• Maximum base current: 100mA
• Maximum collector-emitter saturation voltage: 450mV @ 100mA, 1A
• DC current gain (hFE): 250 @ 100mA, 2V
• Operating temperature range: -55°C to 150°C (TJ)
• Mounting type: Through-hole
• Packaging: Bulk, with options for TO-226-3 and TO-92-3 Long Body packages
• Moisture sensitivity level: 1 (unlimited)
• Frequency transition: 100MHz

Application Grade: The FPN430A is designed for general-purpose applications, making it suitable for a wide range of applications, including:

• Low-power switching
• Amplification
• Signal processing
• Power control

Applications:

• Automotive electronics
• Industrial control systems
• Consumer electronics
• Medical devices
• Aerospace and defense applications

Overall, the FPN430A is a versatile and reliable PNP BJT that can be used in a variety of applications where a high-power, high-voltage transistor is required.